Patent application number | Description | Published |
20090261379 | SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY AND METHOD FOR ITS PRODUCTION - A semiconductor device includes an active region with a vertical drift path of a first conduction type and with a near-surface lateral well of a second, complementary conduction type. In addition, the semiconductor device has an edge region surrounding the active region. This edge region has a variable lateral doping material zone of the second conduction type, which adjoins the well. A transition region in which the concentration of doping material gradually decreases from the concentration of the well to the concentration at the start of the variable lateral doping material zone is located between the lateral well and the variable lateral doping material zone. | 10-22-2009 |
20100078756 | SEMICONDUCTOR DEVICE WITH SEMICONDUCTOR BODY AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor body with a front-sided surface. An active cell region with a semiconductor device structure and an edge region surrounding the active cell region are arranged in the semiconductor body. The front-sided surface of the semiconductor body includes a passivation layer over the edge region and over the active cell region. The passivation layer includes a semiconducting insulation layer of a semiconducting material, the bandgap of which is greater than the bandgap of the material of the semiconductor body. | 04-01-2010 |
20100320535 | TRANSISTOR COMPONENT HAVING AN AMORPHOUS CHANNEL CONTROL LAYER - Disclosed is a semiconductor component, including: a drift zone arranged between a first and a second connection zone; a channel control layer of an amorphous semi-insulating material arranged adjacent to the drift zone. | 12-23-2010 |
20100320536 | TRANSISTOR COMPONENT HAVING AN AMORPHOUS SEMI-ISOLATING CHANNEL CONTROL LAYER - Disclosed is a transistor component having a control structure with a channel control layer of an amorphous semiconductor insulating material extending in a current flow direction along a channel zone. | 12-23-2010 |
20110272735 | SEMICONDUCTOR COMPONENT WITH A TRENCH EDGE TERMINATION - A semiconductor component includes a semiconductor body having a first surface and a second surface, and having an inner region and an edge region. The semiconductor component further includes a pn-junction between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type, the pn-junction extending in a lateral direction of the semiconductor body in the inner region. A first trench extends from the first side in the edge region into the semiconductor body. The trench has sidewalls that are arranged opposite to another and that are beveled relative to a horizontal direction of the semiconductor body. | 11-10-2011 |
20120104537 | Semiconductor Device and a Method for Manufacturing a Semiconductor Device - A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body with a first semiconductor region and a second semiconductor region spaced apart from each other. A first metallization is in contact with the first semiconductor region. A second metallization is in contact with the second semiconductor region. An insulating region extends between the first semiconductor region and the second semiconductor region. A semi-insulating region having a resistivity of about 10 | 05-03-2012 |
20120248576 | Semiconductor Device and Substrate with Chalcogen Doped Region - An undoped semiconductor substrate is doped by applying stress at a side of the undoped semiconductor substrate to release self interstitials in the substrate and implanting chalcogen atoms into the side of the substrate. The substrate is annealed to form a first semiconductor region containing the chalcogen atoms and a second semiconductor region devoid of the chalcogen atoms. The first semiconductor region has a doping concentration higher than the doping concentration of the second semiconductor region. The indiffusion of chalcogen atoms into a semiconductor material in the presence of self interstitials can also be used to form field stop regions in power semiconductor devices. | 10-04-2012 |
20120306046 | Power Semiconductor Device with High Blocking Voltage Capacity - A power semiconductor device includes an active device region disposed in a semiconductor substrate, an edge termination region disposed in the semiconductor substrate between the active device region and a lateral edge of the semiconductor substrate and a trench disposed in the edge termination region which extends from a first surface of the semiconductor substrate toward a second opposing surface of the semiconductor substrate. The trench has an inner sidewall, an outer sidewall and a bottom. The inner sidewall is spaced further from the lateral edge of the semiconductor substrate than the outer sidewall, and an upper portion of the outer sidewall is doped opposite as the inner sidewall and bottom of the trench to increase the blocking voltage capacity. Other structures can be provided which yield a high blocking voltage capacity such as a second trench or a region of chalcogen dopant atoms disposed in the edge termination region. | 12-06-2012 |
20130119522 | Semiconductor Device and Substrate with Chalcogen Doped Region - A semiconductor substrate includes a first side and a second side opposite the first side. A semiconductor material extends between the first and second sides and is devoid of active device regions. The semiconductor material has a first region and a second region. The first region extends from the first side to a depth into the semiconductor material and includes chalcogen dopant atoms which provide a base doping concentration for the first region. The second region extends from the first region to the second side and is devoid of base doping. Further, a power semiconductor component is provided. | 05-16-2013 |
20130200392 | Semicondictor Device with Edge Termination and Method for Manufacturing a Semiconductor Device - According to an embodiment, a semiconductor device includes a semiconductor body having a first semiconductor material and a second semiconductor material having a band gap larger than a band gap of the first semiconductor material. A first pn-junction is formed in the first semiconductor material. A second pn-junction is formed by the second semiconductor material and extends deeper into the semiconductor body than the first pn-junction. The second semiconductor material is in contact with the first semiconductor material and forms part of an edge termination zone of the semiconductor device. | 08-08-2013 |
20130234297 | SEMICONDUCTOR DEVICE, WAFER ASSEMBLY AND METHODS OF MANUFACTURING WAFER ASSEMBLIES AND SEMICONDUCTOR DEVICES - A cavity is formed in a working surface of a substrate in which a semiconductor element is formed. A glass piece formed from a glass material is bonded to the substrate, and the cavity is filled with the glass material. For example, a pre-patterned glass piece is used which includes a protrusion fitting into the cavity. Cavities with widths of more than 10 micrometers are filled fast and reliably. The cavities may have inclined sidewalls. | 09-12-2013 |
20140038413 | Method of Manufacturing a Semiconductor Device including a Dielectric Structure - A dielectric layer is deposited on a working surface of a substrate, wherein the dielectric layer contains or consists of a dielectric polymer. The dielectric layer is partially cured. A portion of the partially cured dielectric layer is removed using a chemical mechanical polishing process. Then the curing of remnant portions of the partially cured dielectric layer is continued to form a dielectric structure. The partially cured dielectric layer shows high removal rates during chemical mechanical polishing. With remnant portions of the dielectric layer provided in cavities, high volume insulating structures can be provided in an efficient manner. | 02-06-2014 |
20140167143 | Semiconductor Device with Step-Shaped Edge Termination, and Method for Manufacturing a Semiconductor Device - A semiconductor body has a first side, second side, lateral edge, active area, edge termination between the active area and the lateral edge, and drift region of a first conductivity type. The edge termination includes a step formed in the semiconductor body between the first side and the lateral edge. The step includes a lateral surface extending up to the first side and a bottom surface extending up to the lateral edge. A first doping zone of a second conductivity type is formed in the semiconductor body along the lateral surface of the step and forms a pn-junction with the drift region. A second doping zone of the first conductivity type is formed in the semiconductor body at least along a part of the bottom surface of the step and extends up to the lateral edge, wherein the second doping zone is in contact with the drift region. | 06-19-2014 |
20140217562 | Power Semiconductor Device with an Edge Termination Region - A power semiconductor device includes a semiconductor substrate, an active device region disposed in the semiconductor substrate, an edge termination region spaced laterally outward from the active device region in the semiconductor substrate, and first and second trenches. The first trench is disposed in the edge termination region and has an inner sidewall, an outer sidewall and a bottom, the inner sidewall being spaced closer to the active device region than the outer sidewall. The second trench is spaced laterally outward from the first trench in the edge termination region, and extends further into the semiconductor substrate than the first trench and has a sidewall which outwardly faces the outer sidewall of the first trench and is doped opposite as the inner sidewall and bottom of the first trench. | 08-07-2014 |
20150014815 | Semiconductor Device and a Method for Manufacturing a Semiconductor Device Having a Semi-Insulating Region - A semiconductor device and a method for forming a semiconductor device are provided. The semiconductor device includes a semiconductor body including a diode-structure with a pn-junction, and an edge-termination structure arranged in a peripheral area of the semiconductor body. The edge-termination structure includes an insulating region partially arranged in the semiconductor body adjacent the pn-junction and a semi-insulating region arranged on the insulating region and spaced apart from the semiconductor body. The semi-insulating region forms a resistor connected in parallel with the diode-structure. | 01-15-2015 |
Patent application number | Description | Published |
20080296612 | Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device - Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing ( | 12-04-2008 |
20090008723 | SEMICONDUCTOR COMPONENT INCLUDING AN EDGE TERMINATION HAVING A TRENCH AND METHOD FOR PRODUCING - A semiconductor component includes a semiconductor body having a first side, a second side, an edge delimiting the semiconductor body in a lateral direction, an inner region and an edge region. A first semiconductor zone of a first conduction type is arranged in the inner region and in the edge region. A second semiconductor zone of a second conduction type is arranged in the inner region and adjacent to the first semiconductor zone. A trench is arranged in the edge region and has first and second sidewalls and a bottom, and extends into the semiconductor body. A doped first sidewall zone of the second conduction type is adjacent to the first sidewall of the trench. A doped second sidewall zone of the second conduction type is adjacent to the second sidewall of the trench. A doped bottom zone of the second conduction type is adjacent to the bottom of the trench. Doping concentrations of the sidewall zones are lower than a doping concentration of the bottom zone. | 01-08-2009 |
20100044825 | SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE - In a semiconductor body, a semiconductor device has an active region with a vertical drift section of a first conduction type and a near-surface lateral well of a second, complementary conduction type. An edge region surrounding this active region comprises a variably laterally doped doping material zone (VLD zone). This VLD zone likewise has the second, complementary conduction type and adjoins the well. The concentration of doping material of the VLD zone decreases to the concentration of doping material of the drift section along the VLD zone towards a semiconductor chip edge. Between the lateral well and the VLD zone, a transitional region is provided which contains at least one zone of complementary doping located at a vertically lower point than the well in the semiconductor body. | 02-25-2010 |
20100052047 | SEMICONDUCTOR DEVICE AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR DEVICE - The semiconductor device has a semiconductor body with a semiconductor device structure. The semiconductor device structure has a first electrode, a second electrode and a gate electrode. The gate electrode is designed to form a conductive channel region. An insulating layer at least partially surrounds the gate electrode. A semi-insulating layer is provided between the gate electrode and at least one of the first electrode and the second electrode. The semi-insulating layer is located outside the conductive channel region and has an interface state density which is greater than the quotient of the breakdown charge and the band gap of the material of the semiconductor body. | 03-04-2010 |
20130228903 | Method of Producing a Vertically Inhomogeneous Platinum or Gold Distribution in a Semiconductor Substrate and in a Semiconductor Device - Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer. | 09-05-2013 |
20130334649 | SEMICONDUCTOR DEVICE HAVING VARIABLY LATERALLY DOPED ZONE WITH DECREASING CONCENTRATION FORMED IN THE TERMINATION REGION - In a semiconductor body, a semiconductor device has an active region with a vertical drift section of a first conduction type and a near-surface lateral well of a second, complementary conduction type. An edge region surrounding this active region comprises a variably laterally doped doping material zone (VLD zone). This VLD zone likewise has the second, complementary conduction type and adjoins the well. The concentration of doping material of the VLD zone decreases to the concentration of doping material of the drift section along the VLD zone towards a semiconductor chip edge. Between the lateral well and the VLD zone, a transitional region is provided which contains at least one zone of complementary doping located at a vertically lower point than the well in the semiconductor body. | 12-19-2013 |
20140061733 | Semiconductor Device with a Passivation Layer - A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer. | 03-06-2014 |
20150056788 | Semiconductor Device with a Passivation Layer - A semiconductor device includes a semiconductor body with a first surface, a contact electrode arranged on the first surface, and a passivation layer on the first surface adjacent the contact electrode. The passivation layer includes a layer stack with an amorphous semi-insulating layer on the first surface, a first nitride layer on the amorphous semi-insulating layer, and a second nitride layer on the first nitride layer. | 02-26-2015 |
Patent application number | Description | Published |
20080276611 | Passive Hydraulic Controller With Positional Correction by Means of a Directionally-Controlled Exchange of Oil - A passive hydraulic controller is disclosed, in which the volumes V | 11-13-2008 |
20110253410 | HIGH-VOLTAGE CONNECTION AND ELECTRIC RAIL VEHICLE HAVING A HIGH-VOLTAGE CONNECTION - A high-voltage connection between two post insulators which can be moved relative to one another. In order to be able to implement such a high-voltage connection in the most compact form possible with regard to insulating air gaps, the high-voltage connection has a current conduction rod, which is surrounded by an insulating body and mounted at one end thereof on the one post insulator at an adjustable distance and at the other end thereof is held on the other post insulator. Outgoing current leads are connected to each end of the current conduction rod. An electric rail vehicle has at least two cars, each having a high-voltage line run in the roof and each having a post insulator on the roof in the area of the mutually facing ends of the cars. The high-voltage connection according to the invention is used in order to achieve an aerodynamically favorable design in the bridging area of the roof area of the cars. | 10-20-2011 |
20110297035 | COVERING FOR A BOGIE OF A RAIL VEHICLE AND RAIL VEHICLE HAVING A COVERED BOGIE - A covering for a bogie of a rail vehicle lends the entire rail vehicle a low aerodynamic tractive resistance in the region of the bogie. The novel covering has a peripheral wall for surrounding the bogie and a fastening device for rotationally guiding the peripheral wall at the upper edge thereof on a superstructure of the rail vehicle. The covering is covered at the lower edge of the peripheral wall by an underbody-like end member that has fastening means for attaching the same to the bogie. | 12-08-2011 |
20120132767 | DEVICE FOR CONNECTING A TABLE TO THE SIDE WALL OF A VEHICLE - A device connects a table for groups of seats arranged transversely with respect to the direction of travel to the side wall of a vehicle with an upright supporting structure disposed below the table top in the vicinity of the side wall and the lower end is fastened to the side wall and the upper end is fastened to the table top. The supporting structure for the table top is stable and reduces the risk of injury to passengers during collisions without any loss in comfort. The supporting structure has two flexurally rigid posts arranged upright at a distance from each other in the longitudinal direction and have buckling points spaced apart from one another in the longitudinal direction of the posts and have defined buckling axes which, when a force acting on the table is exceeded, permit an elastic yielding of the table in the direction of the force. | 05-31-2012 |
20120174818 | RAILWAY VEHICLE HAVING FRONT COUPLING COVER - A railway vehicle has a cover for a front coupling of the railway vehicle. The cover is formed of at least one displaceable front hatch that can be displaced by a drive between an opened and a closed end position. A displacement of the at least one front hatch is guided such that the displacement takes place along a circular segment path about a rotary axis. | 07-12-2012 |
20120219352 | Fastening Arrangement for a Wall-Supported and Floor-Supported Element of an Interior Fitting of a Vehicle - A fastening arrangement for a wall-supported and floor-supported element of an interior fitting on the side wall of a rail vehicle is provided. A C-section rail is arranged on the side wall for receiving sliding blocks to which the element is releasably screwed. The element is provided with a shaped part which at least partially encompasses the C-section rail and extends in the longitudinal direction of the C-section rail. The shaped part is supported on at least both of its ends on the outside of the C-section rail for absorbing vertical loads and moments, and, for absorbing the longitudinal and transverse forces acting on the shaped part, the shaped part is connected to at least one sliding block which is arranged between both ends of the shaped part in the C-section rail. | 08-30-2012 |