Genji
Genji Imai, Hiratsuka-Shi JP
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20120302697 | COATING COMPOSITION, COATED ARTICLE, AND PROCESS FOR FORMATION OF MULTILAYER COATING FILM - The problem to be solved by the present invention is to provide a coating composition that can reduce the heating temperature and shorten the heating time in the coating process, and that has excellent scratch resistance and weather resistance. The present invention provides a coating composition comprising a radically polymerizable unsaturated group-containing compound (A) and a hydroxyl-containing resin (B), the compound (A) being obtained by reacting a caprolactone-modified hydroxyalkyl (meth)acrylate with a polyisocyanate compound, and having an isocyanate equivalent of 300 to 3,800. | 11-29-2012 |
Genji Iwasaki, Tsukuba-Shi JP
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20080275127 | Arylsulfonamido-substituted hydroxamic acid derivatives - α-Amino hydroxamic acid derivative of the formula I, | 11-06-2008 |
Genji Iwasaki, Ibaraki Pref. JP
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20090054467 | Pyrrolo Pyrimidines as Agents for the Inhibition of Cystein Proteases - The invention provides compounds of Formula I or a pharmaceutically acceptable salt or ester thereof wherein the symbols have meaning as defined, which are inhibitors of cathepsin K and find use pharmaceutically for treatment of diseases and medical conditions in which cathepsin K is implicated, e.g. various disorders including inflammation, rheumatoid arthritis, osteoarthritis, osteoporosis and tumors. | 02-26-2009 |
Genji Iwasaki, Tsukuba JP
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20090186889 | SPIRO-SUBSTITUTED PYRROLOPYRIMIDINES - The invention provides compounds of formula I or a pharmaceutically acceptable salt or ester thereof formula I | 07-23-2009 |
Genji Morimoto, Wakayama-Shi JP
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20110065363 | Scale Removing Method and Scale Removing Apparatus - A scale removing apparatus | 03-17-2011 |
Genji Nakamura, Kai-City JP
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20160111290 | CMOS Vt CONTROL INTEGRATION BY MODIFICATION OF METAL-CONTAINING GATE ELECTRODES - A method of forming a semiconductor device is disclosed in various embodiments. The method includes providing a substrate containing first and second device regions, and a high-k film on the substrate, depositing a metal nitride gate electrode film on the high-k film, forming a metal-containing gate electrode film on the metal nitride gate electrode film in the second device region but not in the first device region, and depositing a Si-based cap layer on the metal-containing gate electrode film in the second device region and on the metal nitride gate electrode film in the first device region. | 04-21-2016 |
Genji Nakamura, Nirasaki-Shi JP
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20080274370 | Method for Forming Insulation Film - In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency. | 11-06-2008 |
20100096707 | Method for Forming Insulation Film - In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency. | 04-22-2010 |
20100105215 | METHOD OF MODIFYING INSULATING FILM - An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film. | 04-29-2010 |
Genji Nakamura, Ibaraki-Ken JP
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20080268655 | Method for Manufacturing Semiconductor Device - The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film. | 10-30-2008 |
Genji Nakamura, Yamanashi-Ken JP
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20080233764 | Formation of Gate Insulation Film - A method of forming a gate insulation film | 09-25-2008 |
Genji Ono, Tokyo JP
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20150082848 | ROLLING APPARATUS AND ROLLING MONITORING METHOD - [Object] To provide a rolling apparatus that enables an operator to recognize the rolling status such as the behavior of the steel sheet entering the rolling stand and enables a stable rolling process. | 03-26-2015 |
Genji Sakata, Chigasaki-Shi JP
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20140318608 | SOLAR CELL MANUFACTURING METHOD AND SOLAR CELL - A method of manufacturing a solar cell includes a first center alignment step S | 10-30-2014 |
Genji Sakata, Susono-Shi JP
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20100151150 | PLASMA PROCESSING APPARATUS AND MANUFACTURING METHOD OF DEPOSITION-INHIBITORY MEMBER - A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity. | 06-17-2010 |