Gastaldi
Christian Gastaldi, Nice FR
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20120166970 | Method of providing assistance to the end-user of a software application - A method of providing assistance to a remote end-user of an end-user software application from an agent of an assistance center is described. All the transactions initiated by the end-user of the end-user software application are recorded in a contextual database locally, for applications running exclusively on customer PC, or remotely, for Web applications. Instrumented pages are delivered to the end-user. They include each a help request means. A server of a desktop sharing application is installed in the PC of the agent. When the end-user is requesting assistance all the entries already made by the end-user on a current instrumented page are uploaded. A waiting page and a client side of the desktop sharing application are also downloaded to the PC of the end-user. The end-user to be assisted is assigned to the agent when available. Then, PC of the agent gets a clone of the current instrumented page from the contextual database and a secure communication tunnel between the agent and the end-user is established. The client side of the desktop sharing application is finally activated on the customer PC which lets end-user view desktop of the PC of the agent and allows starting an assistance session between the agent and the end-user. All that being done without any software pre-installation on the client PC. | 06-28-2012 |
Laura Gastaldi, Torino IT
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20140041528 | ADAPTIVE FLOW CONTROL DEVICE FOR A FLOW OF A LIQUID, IN PARTICULAR FOR USE IN A COFFEE-MAKING MACHINE - The device comprises | 02-13-2014 |
Maurizio Gastaldi, Torino IT
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20150273814 | METHOD FOR PRODUCING DECORATIVE ELEMENTS, PARTICULARLY INSIGNIA - The method comprises the steps of: preparing a multiple-layer film ( | 10-01-2015 |
20160090506 | FIRE-RESISTANT MOSAIC TESSERAE - Mosaic tesserae comprising a substrate having a visible face covered with a coating layer of transparent material are provided. This coating layer has a fire resistance of at least CLASS B according to standard EN ISO 11925, improved abrasion resistance and transmittance of radiation with a wavelength between about 400 and about 800 nm equal to at least 80%. Methods of making mosaic tesserae which exhibit these features are also provided. | 03-31-2016 |
Olivier Gastaldi, Jouques FR
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20140044624 | DETRITIATION DEVICE AND METHOD - The invention relates to a detritiation device comprising i) a furnace ( | 02-13-2014 |
Robert Gastaldi, Paimpol FR
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20140165894 | Ship Including a Device for Recovering Floating Objects - A ship comprising a hull at the bow of which an opening is formed, and on each side of said opening a recovery device designed to recover floating objects and guide them towards said opening, each recovering device comprising: a rigid vane having meshes sized so as to not allow the floating objects to pass but to allow water to pass, said vane being designed to adopt a stowed position in which it is out of the water, a collection position in which it is immersed and disposed in a plane substantially perpendicular to the direction of the advance of the ship and upstream of the opening, and a recovery position in which it is immersed and disposed in a plane substantially parallel to the direction of advance of the ship and upstream of the opening, and a control device mounted on the hull, and on which said vane is mounted, and which comprises means for ensuring the passage successively from the stowed position to the collection position and then to the recovery position and from the recovery position to the collection position and then to the stowed position. | 06-19-2014 |
Robert Gastaldi, Suresnes FR
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20110303601 | DEVICE FOR PICKING UP OBJECTS FLOATING ON THE WATER, SUCH AS HYDROCARBONS - A device for picking up floating objects on the water, such as hydrocarbons, has an envelope made of a flexible material impervious to water and to the floating objects, having a mouth at the upstream end and a discharge orifice at the downstream end, a folding rigid framework, arranged inside the envelope and attached thereto at the mouth and at the discharge orifice, at least one inflatable tube attached to the envelope and running along the length of the envelope, and a compressed-gas generation device designed to inflate the or each inflatable tube. | 12-15-2011 |
Roberto Gastaldi, Agrate Brianza IT
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20090116281 | Reading Phase Change Memories - A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element. | 05-07-2009 |
20100284212 | METHOD FOR MULTILEVEL PROGRAMMING OF PHASE CHANGE CELLS USING ADAPTIVE RESET PULSES - A method for programming multilevel PCM cells envisages: forming an amorphous region of amorphous phase change material in a storage element of a PCM cell by applying one or more reset pulse; and forming a conductive path of crystalline phase change material through the amorphous region by applying one or more set pulse, a size of the conductive path defining a programmed state of the PCM cell and an output electrical quantity associated thereto, and being controlled by the value of the reset pulse and set pulse. The step of forming an amorphous region envisages adaptively and iteratively determining, during the programming operations, a value of the reset pulse optimized for electrical and/or physical properties of the PCM cell, and in particular determining a minimum amplitude value of the reset pulse, which allows programming a desired programmed state and a desired value of the output electrical quantity. | 11-11-2010 |
20110113303 | METHOD AND APPARATUSES FOR CUSTOMIZABLE ERROR CORRECTION OF MEMORY - Described herein are a method and apparatuses for providing customizable error correction for memory arrays. In one embodiment, an apparatus includes a memory device having a memory array to store data and an analog to digital sense unit coupled to the memory array. The analog to digital sense unit senses analog signals associated with the memory array and converts the analog signals into distributions of digital values. An error-correcting code (ECC) unit receives the distributions of digital values from the analog to digital sense unit. A configurable non-volatile look-up table generates ECC parameters including error probability data and provides the ECC parameters to the ECC unit for error correction. The error probability data has error probability values that are associated with the distributions of digital values. The ECC unit executes an ECC algorithm to provide error correction using the error probability data. | 05-12-2011 |
20110176358 | Reading Phase Change Memories - A read current high enough to threshold a phase change memory element may be used to read the element without thresholding the memory element. The higher current may improve performance in some cases. The memory element does not threshold because the element is read and the current stopped prior to triggering the memory element. | 07-21-2011 |
20120092923 | READ DISTRIBUTION MANAGEMENT FOR PHASE CHANGE MEMORY - Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory. | 04-19-2012 |
20120300546 | APPARATUS AND METHODS INCLUDING A BIPOLAR JUNCTION TRANSISTOR COUPLED TO A STRING OF MEMORY CELLS - Some embodiments include apparatus and methods having a string of memory cells, a conductive line and a bipolar junction transistor configured to selectively couple the string of memory cells to the conductive line. Other embodiments including additional apparatus and methods are described. | 11-29-2012 |
20130003451 | REFRESH ARCHITECTURE AND ALGORITHM FOR NON-VOLATILE MEMORIES - Methods and systems to refresh a non-volatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level. | 01-03-2013 |
20130272063 | READ DISTRIBUTION MANAGEMENT FOR PHASE CHANGE MEMORY - Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory. | 10-17-2013 |
20140036583 | PHASE CHANGE MEMORY DEVICE - A phase change memory device with memory cells ( | 02-06-2014 |
20140140134 | APPARATUS AND METHODS INCLUDING A BIPOLAR JUNCTION TRANSISTOR COUPLED TO A STRING OF MEMORY CELLS - Some embodiments include apparatus and methods having a string of memory cells, a conductive line and a bipolar junction transistor configured to selectively couple the string of memory cells to the conductive line. Other embodiments including additional apparatus and methods are described. | 05-22-2014 |
20140321191 | RESISTANCE VARIABLE MEMORY SENSING - The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include programming a memory cell to an initial data state and determining a data state of the memory cell by applying a programming signal to the memory cell, the programming signal associated with programming memory cells to a particular data state, and determining whether the data state of the memory cell changes from the initial data state to the particular data state during application of the programming signal. | 10-30-2014 |
20150098269 | READ DISTRIBUTION MANAGEMENT FOR PHASE CHANGE MEMORY - Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory. | 04-09-2015 |
20150255152 | RESISTANCE VARIABLE MEMORY SENSING - The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include programming a memory cell to an initial data state and determining a data state of the memory cell by applying a programming signal to the memory cell, the programming signal associated with programming memory cells to a particular data state, and determining whether the data state of the memory cell changes from the initial data state to the particular data state during application of the programming signal. | 09-10-2015 |
20150287458 | PHASE CHANGE MEMORY DEVICE - A phase change memory device with memory cells ( | 10-08-2015 |
20150302924 | REFRESH ARCHITECTURE AND ALGORITHM FOR NON-VOLATILE MEMORIES - Methods and systems to refresh a nonvolatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level. | 10-22-2015 |
Roberto Gastaldi, Torino IT
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20090044383 | TENSION REGULATOR FOR A SAFETY BELT OF A SEAT, IN PARTICULAR A CHILD SAFTEY SEAT - A tension regulator for a safety belt of a seat, in particular a child safety seat, is provided with a metal body having a contrast cross member and with a slider, which is also made of metal; the slider has a retention cross member, wound on which is a strap of the safety belt, and is slidable with respect to the body for exerting a nipping action on said strap between the retention cross member and the contrast cross member; the body has a guide cross member, which defines, with the contrast cross member, a passage that can be engaged by the strap for keeping the strap folded on an edge of said contrast cross member. | 02-19-2009 |
Roberto Gastaldi US
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20120113711 | Using A Bit Specific Reference Level To Read A Memory - A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments, | 05-10-2012 |
20120287698 | Using a Bit Specific Reference Level to Read a Memory - A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read. window or margin may be improved in some embodiments. | 11-15-2012 |
Roberto Gastaldi, Agrate Brianza (mb) IT
Patent application number | Description | Published |
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20130318418 | ADAPTIVE ERROR CORRECTION FOR PHASE CHANGE MEMORY - Subject matter disclosed herein relates to memory operations regarding error correction or error detection. | 11-28-2013 |
Silvia Gastaldi, Torino IT
Patent application number | Description | Published |
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20160090506 | FIRE-RESISTANT MOSAIC TESSERAE - Mosaic tesserae comprising a substrate having a visible face covered with a coating layer of transparent material are provided. This coating layer has a fire resistance of at least CLASS B according to standard EN ISO 11925, improved abrasion resistance and transmittance of radiation with a wavelength between about 400 and about 800 nm equal to at least 80%. Methods of making mosaic tesserae which exhibit these features are also provided. | 03-31-2016 |