Patent application number | Description | Published |
20120225191 | Apparatus and Process for Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units. | 09-06-2012 |
20120225192 | Apparatus And Process For Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units. | 09-06-2012 |
20120269967 | Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use - Provided are gas distribution plates for atomic layer deposition apparatus including a hot wire or hot wire unit which can be heated to excite gaseous species while processing a substrate. Methods of processing substrates using a hot wire to excite gaseous precursor species are also described. | 10-25-2012 |
20130143415 | Multi-Component Film Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate. | 06-06-2013 |
20130164445 | Self-Contained Heating Element - Provided are assemblies comprising an elongate enclosure comprising a material resistant to thermal expansion at temperatures experienced in a processing chamber. At least one heating element extends along a longitudinal axis of the elongate enclosure through an open interior region allowing a flow of gases to pass the heating element in a direction substantially perpendicular to the longitudinal axis. Methods of processing substrates using a heating element to excite gaseous precursor species are also described. | 06-27-2013 |
20150048739 | Elongated Capacitively Coupled Plasma Source For High Temperature Low Pressure Environments - A modular plasma source assembly for use with a processing chamber is described. The assembly includes an RF hot electrode with an end dielectric and a sliding ground connection positioned adjacent the sides of the electrode. A seal foil connects the sliding ground connection to the housing to provide a grounded sliding ground connection separated from the hot electrode by the end dielectric. A coaxial feed line passes through a conduit into the RF hot electrode isolated from the processing environment so that the coaxial RF feed line is at atmospheric pressure while the plasma processing region is at reduced pressure. | 02-19-2015 |
20150368798 | Apparatus And Process Containment For Spatially Separated Atomic Layer Deposition - Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports with gas curtains extending along the outer length of the gas distribution plate. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of elongate gas ports with gas curtains. | 12-24-2015 |
20160068958 | Lamp Heater For Atomic Layer Deposition - Apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform are described. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating. | 03-10-2016 |
20160097122 | TOP LAMP MODULE FOR CAROUSEL DEPOSITION CHAMBER - A heating module for use in a substrate processing chamber. The heating module having a housing with a heat source therein. The heating module can be part of a gas distribution assembly positioned above a susceptor assembly to heat the top surface of the susceptor and wafers directly. The heating module can have constant or variable power output. Processing chambers and methods of processing a wafer using the heating module are described. | 04-07-2016 |