Patent application number | Description | Published |
20090203205 | Method for producing a floating gate with an alternation of lines of first and second materials - A diblock copolymer layer comprising at least two polymers and having a lamellar structure perpendicularly to a substrate is deposited on a first gate insulator formed on the substrate. One of the polymers of the diblock copolymer layer is then eliminated to form parallel grooves in the copolymer layer. The grooves are filled by a first metallic or semi-conductor material and the rest of the copolymer layer is eliminated. A second dielectric material is deposited to form a second gate insulator. The second gate insulator of the floating gate then comprises an alternation of parallel first and second lines respectively of the first and second materials, the second material encapsulating the lines of the first material. | 08-13-2009 |
20110169067 | STRUCTURE AND PRODUCTION PROCESS OF A MICROELECTRONIC 3D MEMORY DEVICE OF FLASH NAND TYPE - A microelectronic flash memory device including a plurality of memory cells including transistors fitted with a matrix of channels connecting a block of common source to a second block on which bit lines rest, the transistors also being formed by a plurality of gates including at least one gate material, including a first selection gate coating the channels, a plurality of control gates coating the channels, a plurality of second selection gates each coating the channels of the same row and the matricial arrangement, at least one or more of the gates based on superposition of layers including at least one first layer of dielectrical material, at least one charge store zone, and at least one second layer of dielectrical material. | 07-14-2011 |
20110300699 | FABRICATION OF A MEMORY WITH TWO SELF-ALIGNED INDEPENDENT GATES - A method for making a micro-electronic non-volatile memory device provided with transistors having gates placed side by side, the method comprising the steps of:
| 12-08-2011 |
20120139025 | DUAL GATE ELECTRONIC MEMORY CELL AND DEVICE WITH DUAL GATE ELECTRONIC MEMORY CELLS - A memory cell including:
| 06-07-2012 |
20140145141 | ELECTRONIC MEMORY DEVICE - An electronic device includes a first electrode made of an inert material; a second electrode made of a soluble material; a solid electrolyte made of an ion-conductive material, wherein the first and second electrodes are in contact respectively with one of the faces of the electrolyte, either side of the electrolyte, wherein the second electrode supplies mobile ions flowing in the electrolyte towards the first electrode, to form a conductive filament when a voltage is applied between the first and second electrodes. The second electrode is a confinement electrode that includes an end surface in contact with the electrolyte which is less than the available surface of the electrolyte, such that confinement of the contact area of the confinement electrode on the solid electrolyte is obtained. | 05-29-2014 |
20150078065 | NON-VOLATILE RESISTIVE MEMORY CELL - The invention more particularly relates to a resistive memory cell comprising a first and a second metal electrodes and a solid electrolyte positioned between the first and the second metal electrodes, with the solid electrolyte comprising a commutation layer in contact with the first electrode and a dielectric layer, with said resistive memory cell being able to be electrically modified so as to switch from a first resistive state to a second resistive state (state LRS) wherein the resistance (R | 03-19-2015 |
20150162081 | METHOD FOR DETERMINING ELECTRICAL PARAMETERS USED TO PROGRAMME A RESISTIVE RANDOM ACCESS MEMORY - A method determines electrical parameters for programming a resistive random access memory in an insulating state and in a conducting state, by formation or dissolution of a filament. | 06-11-2015 |
20150280120 | RESISTIVE RANDOM ACCESS MEMORY DEVICE - A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material, and a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte, the second electrode to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, the solid electrolyte including a region made of a first metal oxide that is doped by a second metal, distinct from the first metal and able to form a second metal oxide, the second metal selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to that of the first metal oxide not doped by the second metal. | 10-01-2015 |