Patent application number | Description | Published |
20110040925 | Method and Apparatus for Addressing Actual or Predicted Failures in a FLASH-Based Storage System - Methods and apparatuses for enhanced protection of data stored in a FLASH memory system involve a controller capable of adapting to the failure of one or more FLASH memory devices in the memory system. The controller stores data in the form of page stripes, each page stripe composed of data pages, and each data page stored in a different FLASH memory device. The controller also detects failure of a FLASH memory device in which a data page of a particular page stripe is stored, reconstructs the data page, and stores the reconstructed data page in a new page stripe, where the number of data pages in the new page stripe is less than the number of data pages in the particular page stripe, and where no page of the new page stripe is stored in a memory location within the failed FLASH memory device. | 02-17-2011 |
20110040926 | FLASH-based Memory System With Variable Length Page Stripes Including Data Protection Information - Methods and apparatuses for enhanced protection of data stored in a FLASH memory system involve a controller capable of protecting data using different size page stripes. The controller is configured to store data in FLASH memory devices in the form of page stripes, each page stripe comprising a plurality of pages of information, each page of information being stored in a different FLASH memory chip. The controller stores the data in a manner such that the pages making up each page stripe includes a plurality of data pages and at least one data protection page. In one implementation, the page stripes stored by the controller include a first page stripe having N data pages and one data protection page, and a second page stripe having M data pages and one data protection page, where N is an integer greater than three and M is an integer less than N. | 02-17-2011 |
20110040927 | Method and Apparatus for Performing Enhanced Read and Write Operations in a FLASH Memory System - Methods and apparatus for enhanced READ and WRITE operations in a FLASH-based solid state storage system that includes a logical to physical translation table where the logical to physical translation table can include entries associating a logical block address with one or more data identifiers, where each data identifier is associated with a data string. | 02-17-2011 |
20110040932 | Efficient Reduction of Read Disturb Errors in NAND FLASH Memory - Methods and apparatuses for reduction of Read Disturb errors in a NAND FLASH memory system comprise a controller configured to organize FLASH memory devices into blocks, each block having a plurality of pages, and each page defining an individually addressable physical memory location. The controller is further configured to accumulate a Block READ Count corresponding to the number of times any pages in a first block of pages have been read since the first block was last erased. Once the READ count reaches a predetermined number, the controller responds to subsequent READ requests for pages within the first block by moving data associated with a requested page to a page in a second, different block without moving data associated with other pages in the first block, and modifying a logical-to-physical translation table to associate the moved data with the physical address of the page in the second block. | 02-17-2011 |
20110087855 | Method and Apparatus for Protecting Data Using Variable Size Page Stripes in a FLASH-Based Storage System - Methods and apparatuses for enhanced protection of data stored in a FLASH memory system involve a controller capable of using variable size page stripes in the memory system. The controller is configured to store data such that each page stripe comprises a plurality of data pages, with each data page in the page stripe being stored in a different FLASH memory chip. The controller is also configured to maintain one or more buffers containing information reflecting blocks of memory within the FLASH memory chips that have been erased and are available for information storage, and to dynamically determine the number of data pages to be included in a page stripe based on the information in the one or more buffers such that a first page stripe and a second page stripe can have different numbers of data pages. | 04-14-2011 |
20120221781 | FLASH-BASED MEMORY SYSTEM WITH VARIABLE LENGTH PAGE STRIPES INCLUDING DATA PROTECTION INFORMATION - Methods and apparatuses for enhanced protection of data stored in a FLASH memory system involve a controller capable of adapting to the failure of one or more FLASH memory devices in the memory system. The controller stores data in the form of page stripes, each page stripe composed of data pages, and each data page stored in a different FLASH memory device. The controller also detects failure of a FLASH memory device in which a data page of a particular page stripe is stored, reconstructs the data page, and stores the reconstructed data page in a new page stripe, where the number of data pages in the new page stripe is less than the number of data pages in the particular page stripe, and where no page of the new page stripe is stored in a memory location within the failed FLASH memory device. | 08-30-2012 |
20120221888 | METHOD AND APPARATUS FOR ADDRESSING ACTUAL OR PREDICTED FAILURES IN A FLASH-BASED STORAGE SYSTEM - Methods and apparatuses for enhanced protection of data stored in a FLASH memory system involve a controller capable of adapting to the failure of one or more FLASH memory devices in the memory system. The controller stores data in the form of page stripes, each page stripe composed of data pages, and each data page stored in a different FLASH memory device. The controller also detects failure of a FLASH memory device in which a data page of a particular page stripe is stored, reconstructs the data page, and stores the reconstructed data page in a new page stripe, where the number of data pages in the new page stripe is less than the number of data pages in the particular page stripe, and where no page of the new page stripe is stored in a memory location within the failed FLASH memory device. | 08-30-2012 |
20120233391 | Efficient Reduction of Read Disturb Errors in NAND FLASH Memory - Methods and apparatuses for reduction of Read Disturb errors in a NAND FLASH memory system comprise a controller configured to organize FLASH memory devices into blocks, each block having a plurality of pages, and each page defining an individually addressable physical memory location. The controller is further configured to accumulate a Block READ Count corresponding to the number of times any pages in a first block of pages have been read since the first block was last erased. Once the READ count reaches a predetermined number, the controller responds to subsequent READ requests for pages within the first block by moving data associated with a requested page to a page in a second, different block without moving data associated with other pages in the first block, and modifying a logical-to-physical translation table to associate the moved data with the physical address of the page in the second block. | 09-13-2012 |
20140143636 | MEMORY SYSTEM WITH VARIABLE LENGTH PAGE STRIPES INCLUDING DATA PROTECTION INFORMATION - Methods and apparatuses for enhanced protection of data stored in a non-volatile memory system involve a controller capable of adapting to the failure of one or more non-volatile memory devices in the memory system. The controller stores data in the form of page stripes, each page stripe composed of data pages, and each data page stored in a different non-volatile memory device. The controller also detects failure of a non-volatile memory device in which a data page of a particular page stripe is stored, reconstructs the data page, and stores the reconstructed data page in a new page stripe, where the number of data pages in the new page stripe is less than the number of data pages in the particular page stripe, and where no page of the new page stripe is stored in a memory location within the failed non-volatile memory device. | 05-22-2014 |