Patent application number | Description | Published |
20080296585 | GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE - A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate. | 12-04-2008 |
20080308814 | GALLIUM NITRIDE SUBSTRATE AND GALLIUM NITRIDE LAYER FORMATION METHOD - There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×10 | 12-18-2008 |
20090079036 | Gallium Nitride Baseplate and Epitaxial Substrate - A method of forming an iron-doped gallium nitride for a semi-insulating GaN substrate is provided. A substrate ( | 03-26-2009 |
20090108297 | SEMI-INSULATING NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE, AND FIELD-EFFECT TRANSISTOR - A method of manufacturing a semi-insulating nitride semiconductor substrate includes the steps of forming on an underlying substrate, a mask in which dotted or striped coating portions having a width or a diameter Ds from 10 μm to 100 μm are arranged at an interval Dw from 250 μm to 2000 μm, growing a nitride semiconductor crystal on the underlying substrate with an HVPE method at a growth temperature from 1040° C. to 1150° C. by supplying a group III raw material gas and a group V raw material gas of which group V/group III ratio R | 04-30-2009 |
20090209091 | Method of Manufacturing Group III Nitride Crystal - Made available is a Group III nitride crystal manufacturing method whereby incidence of cracking in the III-nitride crystal when the III-nitride substrate is removed is kept to a minimum. III nitride crystal manufacturing method provided with: a step of growing, onto one principal face ( | 08-20-2009 |
20100009526 | FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE - A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided. | 01-14-2010 |
20110065265 | FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE - A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided. | 03-17-2011 |
20110121311 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE - The present invention provides a method for manufacturing a semiconductor substrate including a low-resistance nitride layer laminated on a substrate, a method for manufacturing a semiconductor device, a semiconductor substrate, and a semiconductor device. A method for manufacturing a semiconductor substrate of the present invention includes the following steps: A nitride substrate having a principal surface and a back surface opposite to the principal surface is prepared. Vapor-phase ions are implanted into the back surface of the nitride substrate. The back surface of the nitride substrate is bonded to a dissimilar substrate to form a bonded substrate. The nitride substrate is partially separated from the bonded substrate to form a laminated substrate including the dissimilar substrate and a nitride layer. The laminated substrate is heat-treated at a temperature over 700° C. | 05-26-2011 |
20120126371 | CONDUCTIVE NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME - A method for producing a conductive nitride semiconductor substrate circuit includes the steps of forming, on an underlying substrate, a mask including dot or stripe masking portions having a width or diameter of 10 to 100 μm and arranged at a spacing of 250 to 10,000 μm; growing a nitride semiconductor crystal on the underlying substrate by hydride vapor phase epitaxy (HVPE) at a growth temperature of 1,040° C. to 1,150° C. by supplying a group III source gas, a group V source gas, and a silicon-containing gas in a V/III ratio of 1 to 10; and removing the underlying substrate, thus forming a free-standing conductive nitride semiconductor crystal substrate having a resistivity r of 0.0015 Ωcm≦r≦0.01 Ωcm, a thickness of 100 μm or more, and a radius of bow curvature U of 3.5 m≦U≦8 m. | 05-24-2012 |
20130040437 | Method of Manufacturing Composite Substrate - A composite-substrate manufacturing method is provided with: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of setting said surface of the bulk substrate against the second substrate, and bonding the bulk substrate and the second substrate together to obtain a bonded substrate; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing the remaining portion of the bulk substrate from the bonded substrate; characterized in that a predetermined formula as for the first temperature, the thermal expansion coefficient of the first substrate, and the thermal expansion coefficient of the second substrate is satisfied. | 02-14-2013 |
20130244406 | FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE - A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided. | 09-19-2013 |
20140103358 | Composite Substrate - An epitaxial-deposition composite substrate, of more than about 50 mm diameter, in which a nitride-compound semiconductor first substrate is bonded together with a second substrate of either identical or different material. The first substrate is ion-implanted, and on its nitrogen-face side is coated with a special film of thickness within a predetermined range. On a bonding side of the second substrate a special coating of thickness within the predetermined range is formed. The join created by the coated nitrogen-face side of the first substrate being bonded to the coated bonding side of the second substrate occupies at least 90% of the surface area where the two substrates meet. | 04-17-2014 |