Patent application number | Description | Published |
20120025667 | Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device - A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step. | 02-02-2012 |
20120056508 | Method for manufacturing a piezoelectric film wafer, piezolelectric film element, and piezoelectric film device - A method for manufacturing a piezoelectric film wafer includes an etching step for carrying out a dry etching on a piezoelectric film formed on a substrate by using a gas containing Ar, and a step of changing a rate of the dry etching by detecting a change in an emission peak intensity of Na in emitted ion plasma the piezoelectric film. The piezoelectric film is made of an alkali niobate-based perovskite structure expressed in a composition formula (K | 03-08-2012 |
20120304429 | MANUFACTURING METHODS OF PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE - A manufacturing method of a piezoelectric film element includes forming a lower electrode on a substrate, forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure on the lower electrode, forming a mask pattern on the piezoelectric film, dry-etching the piezoelectric film via the mask pattern, removing the mask pattern after the dry etching, and heat-treating the piezoelectric film in an oxidizing atmosphere. A manufacturing method of a piezoelectric device includes forming an upper electrode on the piezoelectric film of the piezoelectric film element formed by the manufacturing method of the piezoelectric film element, and connecting an electric voltage applying means or an electric voltage detecting means to the lower electrode and the upper electrode. | 12-06-2012 |
20130038176 | MANUFACTURING METHOD OF PIEZOELECTRIC FILM ELEMENT, PIEZOELECTRIC FILM ELEMENT AND PIEZOELECTRIC DEVICE - A manufacturing method of a piezoelectric film element includes forming a piezoelectric film including a lead-free alkali niobate based compound having a perovskite structure represented by a compositional formula of (K | 02-14-2013 |
20130187516 | PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC DEVICE - A piezoelectric element includes a substrate, and at least a lower electrode layer, a piezoelectric film represented by a general formula of (Na | 07-25-2013 |
20140042875 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE AND METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT - A piezoelectric element includes a substrate, and a lower electrode layer, a piezoelectric film represented by a general formula of (Na | 02-13-2014 |
20140285068 | PIEZOELECTRIC THIN-FILM ELEMENT, PIEZOELECTRIC SENSOR AND VIBRATION GENERATOR - A piezoelectric thin-film element includes a substrate, a lower electrode layer formed on the substrate, a piezoelectric thin-film layer that is formed on the lower electrode layer and includes potassium sodium niobate having a perovskite structure represented by the composition formula of (K | 09-25-2014 |
20140285069 | PIEZOELECTRIC THIN-FILM MULTILAYER BODY - A piezoelectric thin-film multilayer body includes a substrate, an adhesive layer on the substrate, a lower electrode layer on the adhesive layer, and a lead-free piezoelectric thin-film layer on the lower electrode layer. The lead-free piezoelectric thin-film layer is composed of lithium potassium sodium niobate (composition formula (Na | 09-25-2014 |
20150064804 | METHOD FOR MANUFACTURING NIOBATE-SYSTEM FERROELECTRIC THIN FILM DEVICE - There is provided a method for manufacturing a niobate-system ferroelectric thin film device, including: a lower electrode film formation step of forming a lower electrode film on a substrate; a niobate-system ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask formation step of forming a desired etch mask pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of forming a desired fine pattern of the niobate-system ferroelectric thin film by wet etching using an etchant including an aqueous alkaline solution of a chelating agent. | 03-05-2015 |