Fu-Wei
Fu-Wei Chan, Changhua County TW
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20120305919 | FULLERENE DERIVATIVES AND OPTOELECTRONIC DEVICES UTILIZING THE SAME - Disclosed is a fullerene derivative having a formula of F-Cy, wherein F is an open-cage fullerene, and Cy is a chalcogenyl group. The fullerene derivative can be applied to hydrogen storage material and an optoelectronic device such as an organic light emitting diode (OLED), a solar cell, or an organic thin film transistor (TFT). | 12-06-2012 |
Fu-Wei Chen, Hsinchu City TW
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20150185274 | Apparatus of Three-Dimensional Integrated-Circuit Chip Using Fault-Tolerant Test Through-Silicon-Via - An apparatus of three-dimensional integrated-circuit (3D-IC) chip is provided. The apparatus uses a test through-silicon-via (TSV). The test TSV is used as a redundant TSV operated under a normal mode. Vice versa, the test TSV is remained to be used as a traditional test TSV under a scan mode. The present invention significantly reduces the number of redundant TSVs and the production cost of the chip. | 07-02-2015 |
Fu-Wei Yao, Hsin-Chu City TW
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20150325679 | Rectifier Structures with Low Leakage - An integrated circuit device includes a first III-V compound layer, a second III-V compound layer over the first III-V compound layer, a gate dielectric over the second III-V compound layer, and a gate electrode over the gate dielectric. An anode electrode and a cathode electrode are formed on opposite sides of the gate electrode. The anode electrode is electrically connected to the gate electrode. The anode electrode, the cathode electrode, and the gate electrode form portions of a rectifier. | 11-12-2015 |
Fu-Wei Yoa, Hsinchu City TW
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20130240952 | PLASMA PROTECTION DIODE FOR A HEMT DEVICE - The present disclosure provides a semiconductor device. The semiconductor device includes a silicon substrate. A first III-V compound layer is disposed over the silicon substrate. A second III-V compound layer is disposed over the first III-V compound layer. The semiconductor device includes a transistor disposed over the first III-V compound layer and partially in the second III-V compound layer. The semiconductor device includes a diode disposed in the silicon substrate. The semiconductor device includes a via coupled to the diode and extending through at least the first III-V compound layer. The via is electrically coupled to the transistor or disposed adjacent to the transistor. | 09-19-2013 |