Patent application number | Description | Published |
20130032649 | Method for Protecting Aluminum Nitride from Moisture - Disclosed is a method for protecting aluminum nitride from moisture. At first, a mixing apparatus is provided. Aluminum nitride powder, calcium silicate, dodecylamine, a binding agent and an anhydrous solvent are mixed with one another by the mixing apparatus. The mixture is made into grains in a granulating process. The hydrophilism, thermal stability and thermal conductivity of the dodecylamine are used to make the grains moisture-proof and not vulnerable to deterioration. Thus, the stability of the aluminum nitride is improved. | 02-07-2013 |
20130032965 | Method for Hot Isostatic Pressing a Substrate - Disclosed is a method for hot isostatic pressing a substrate. At first, a metal container is provided. Powder is filled in the metal container before the metal container is located in an oven. The metal container is subjected to isostatic pressing that includes heating and pressing. Thus, the metal container shrinks and presses on the powder evenly and turns the powder into a nugget. The metal container is moved out of the oven and broken to release the nugget. A substrate is cut from the nugget. With the hot isostatic pressing, the substrate exhibits only a few flaws and is large, fine, homogenous and strong so that the substrate is not vulnerable to deformation in a high-pressure environment. | 02-07-2013 |
20130035224 | Method for Making an Aluminum Nitride Substrate - Disclosed is a method for making an aluminum nitride substrate. At first, aluminum nitride is mixed with a carbonized material. The mixture is made into mixture powder in a granulation process. The mixture powder is sintered at an appropriate temperature so that the carbonized material reacts with oxygen to produce a gaseous carbon compound. The gaseous carbon compound is released, and hence an aluminum nitride substrate is made. Before the making of the aluminum nitride substrate is made, the aluminum nitride powder is mixed with the carbonized material. For the stable heat dispersion of the carbonized material, the heating is even during the sintering. The purity of the aluminum nitride substrate is high, the quality of the aluminum nitride substrate is good, and the size of the aluminum nitride substrate is large. Hence, the yield of the making of the aluminum nitride substrate is high. | 02-07-2013 |