Patent application number | Description | Published |
20080196747 | Molecular bonding method with cleaning with hydrofluoric acid in vapor phase and rinsing with deionized water - Adhesion by molecular bonding of two free surfaces of first and second substrates, for example formed by monocrystalline silicon wafers, comprises at least successively:
| 08-21-2008 |
20080272396 | Simplified Method of Producing an Epitaxially Grown Structure - Method to produce a structure consisting of depositing a material by columnar epitaxy on a crystalline face of a substrate ( | 11-06-2008 |
20080280419 | METHOD FOR NANOSTRUCTURING OF THE SURFACE OF A SUBSTRATE - Under consideration here is a method for the production of periodic nanostructuring on one of the surfaces of a substrate ( | 11-13-2008 |
20080318366 | METHOD FOR PRODUCING A SUPPORT FOR THE GROWTH OF LOCALISED ELONGATED NANOSTRUCTURES - The invention relates to a method for producing a support comprising nanoparticles ( | 12-25-2008 |
20090162991 | PROCESS FOR ASSEMBLING SUBSTRATES WITH LOW-TEMPERATURE HEAT TREATMENTS - The invention relates to a process for producing a bond between a first and a second substrate ( | 06-25-2009 |
20090246933 | METHOD OF PRODUCING A STRAINED LAYER - A method of producing a strained layer on a substrate includes assembling a layer with a first structure or first means of straining including at least one substrate or one layer capable of being deformed within a plane thereof under the influence of an electric or magnetic field or a photon flux. The layer is strained by modifying the electric or magnetic field or the photon flux. The strained layer is assembled with a transfer substrate and all or part of the first straining structure is removed. | 10-01-2009 |
20110207293 | METHOD OF PRODUCING A HYBRID SUBSTRATE HAVING A CONTINUOUS BURIED EECTRICALLY INSULATING LAYER - A method for producing a hybrid substrate includes preparing a first substrate including a mixed layer and an underlying electrically insulating continuous layer, the mixed layer made up of first single-crystal areas and second adjacent amorphous areas, the second areas making up at least part of the free surface of the first substrate. A second substrate is bonded to the first substrate, the second substrate including on the surface thereof, a reference layer with a predetermined crystallographic orientation. The first substrate is bonded to the second substrate by hydrophobic molecular bonding of at least the amorphous areas. A recrystallisation of at least part of the amorphous areas to solid phase is carried out according to the crystallographic orientation of the reference layer, and the two substrates are separated at the bonding interface. | 08-25-2011 |
20120088352 | PROCESS FOR ASSEMBLING SUBSTRATES WITH LOW-TEMPERATURE HEAT TREATMENTS - The invention relates to a process for producing a bond between a first and a second substrate. The process includes preparing surfaces of the substrates to be assembled, and attaching the surfaces to form an assembly of these two surfaces, by direct molecular bonding. The assembly is then heat treated, which includes maintaining the temperature within the range of 50° C. to 100° C. for at least one hour. | 04-12-2012 |
20120100719 | METHOD FOR MAKING A PLANAR MEMBRANE - A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in absence of any external stress, and its thickness can be less than or equal to one micrometer. | 04-26-2012 |
20130075365 | METHOD FOR BUILDING A SUBSTRATE HOLDER - A method for making a support of at least one substrate, including: making a stack including at least two substrates, each of the two substrates including two opposite main faces, both substrates being secured to each other such that one of the main faces of a first of the two substrates is positioned facing one of the main faces of the second of the two substrates and against an etch-stop material; etching, through the first of the two substrates and with stop on the etch-stop material, at least one location that can receive a substrate that can be supported by the support. | 03-28-2013 |
20130156989 | MANUFACTURING A FLEXIBLE STRUCTURE BY TRANSFERS OF LAYERS - A method for manufacturing a flexible structure including implanting ionic species in first and second source substrates so as to form first and second embrittlement regions respectively, delimiting first and second thin films, providing a flexible substrate, the stiffness R of which is less than or equal to 10 | 06-20-2013 |
20140014618 | METHOD FOR PRODUCING A SUBSTRATE HOLDER - A method for producing a holder of at least one substrate from a first and a second plate, each including first and second parallel flat faces, the method including: a) delimitation on the first face of the second plate of plural surfaces by a non-bondable area in which a direct bonding with a face of the first plate is prevented; b) bringing the first face of the second plate into contact with the first face of the first plate; c) direct bonding between the first faces except in the non-bondable area; and d) removal of the portions of the second plate located vertically below surfaces inside the non-bondable area. | 01-16-2014 |
20140178596 | METHOD FOR RECYCLING A SUBSTRATE HOLDER - A method for recycling a substrate holder adapted to receive a substrate for at least one deposition step of a layer of a material on the substrate also leading to the depositing of a layer of a material on the substrate holder, the method including implanting ion species through a receiving surface of the substrate holder so as to form at least one buried weakened plane delimiting a thin film underneath the receiving surface of the substrate holder, exfoliating the thin film from the substrate holder so as to break up the thin film, and removing a stack including at least one layer of a material deposited on the thin film resulting from the at least one deposition step of the layer of a material on the substrate. | 06-26-2014 |
20140295642 | DOUBLE LAYER TRANSFER METHOD - A method of transferring a layer including: a) providing a layer joined to an initial substrate with a binding energy E0; b) bonding a front face of the layer on an intermediate substrate according to an intermediate bonding energy Ei; c) detaching the initial substrate from the layer; e) bonding a rear face onto a final substrate according to a final bonding energy Ef; and f) debonding the intermediate substrate from the layer to transfer the layer onto the final substrate; step b) comprising a step of forming siloxane bonds Si—O—Si, step c) being carried out in a first anhydrous atmosphere and step f) being carried out in a second wet atmosphere such that the intermediate bonding energy Ei takes a first value Ei1 in step c) and a second value Ei2 in step f), with Ei1>E | 10-02-2014 |