Patent application number | Description | Published |
20100142485 | METHOD FOR PERFORMING HANDOVER IN WIRELESS COMMUNICATION SYSTEM - A method for performing a handover by a user equipment from a serving base station to a target base station includes transmitting a random access preamble to the target base station, receiving a random access response in response to the random access preamble; after receiving the random access response, transmitting a handover confirm message for indicating completion of the handover between the user equipment and the target base station, and transmitting a packet data sequence number report message indicating packet data received from the serving base station in a process of performing the handover. Repeated transmission of downlink data or uplink data can be avoided during a handover procedure. | 06-10-2010 |
20100208779 | Transmitter for Reducing Channel Selectivity - A transmitter for reducing time selectivity and/or frequency selectivity in a wireless communication system includes a plurality of transmit antennas, a phase shifter which is disposed for each transmit antenna and is configured to shift a phase of data transmitted through the transmit antenna by a phase shift value, and a channel selectivity processor configured to obtain the phase shift value by using a channel phase value fed back from a receiver. | 08-19-2010 |
20110128893 | RESOURCE ALLOCATION METHOD FOR BACKHAUL LINK AND ACCESS LINK IN A WIRELESS COMMUNICATION SYSTEM INCLUDING RELAY - A resource allocation method of a relay station in a wireless communication system employing the relay station is provided. The method includes: receiving information on a resource allocation pattern for an access link and a backhaul link of a first frequency band; and determining a resource allocation pattern for an access link and a backhaul link of a second frequency band on the basis of the resource allocation pattern of the first frequency band, wherein the first frequency band is any one of an uplink frequency band and a downlink frequency band, and the second frequency band is a remaining one of the uplink frequency band and the downlink frequency band. | 06-02-2011 |
20110159903 | METHOD AND APPARATUS FOR COMMUNICATION USING MULTIPLE CARRIERS - A method and apparatus for communication using multiple carriers is provided. A mobile station receives information regarding at least one assigned carrier selected from the available carriers based on the multiple carrier capability from a base station. The mobile station activates or inactivates the at least one assigned carrier by receiving a message comprising information indicating activation or inactivation of the at least one assigned carrier from the base station. Signaling overhead for managing multiple carriers may be reduced. | 06-30-2011 |
20110194502 | METHOD FOR TRANSMITTING VOIP PACKET - A method for transmitting a voice over Internet protocol (VoIP) packet includes allocating a radio resource for VoIP packet transmission to a user, transitioning a VoIP service from a talk period, in which the VoIP packet is transmitted using the radio resource, to a silence period in which the VoIP packet is not transmitted, releasing the radio resource during the silence period, and transitioning the VoIP service to the talk period by reallocating the radio resource. Limited radio resources can be further effectively used. | 08-11-2011 |
Patent application number | Description | Published |
20140198768 | METHOD AND APPARATUS FOR SWITCHING CONNECTION IN WIRELESS COMMUNICATION SYSTEM - A method and apparatus for switching a connection in a wireless communication system is provided. A source cell decides radio resource control (RRC) connection switching to a target cell, transmits an aggregated user equipment (UE) context transfer message to the target cell, and transmits an RRC connection switching message to a UE in coverage of the source cell. The RRC connection switching message includes information on an identity of the target cell and a period during which the UE should finish the RRC connection switching to the target cell. | 07-17-2014 |
20140199982 | METHOD AND APPARATUS FOR TRANSMITTING INDICATION OF CELL STATE IN WIRELESS COMMUNICATION SYSTEM - A method and apparatus for transmitting an expanding request in a wireless communication system is provided. A first cell transmits an expanding request, which includes a cell off state indication which indicates the first cell is going to be turned off, and a cell off timer, to a second cell, receives an expanding request acknowledge as a response to the expanding request from the second cell, and turns off power. Alternatively, a method and apparatus for transmitting a shrinking request in a wireless communication system is provided. The first cell transmits a shrinking request, which includes a cell on state indication which indicates the first cell is going to be turned on, and a cell on timer, to a second cell, receives a shrinking request acknowledge as a response to the shrinking request from the second cell, and turns on power. | 07-17-2014 |
Patent application number | Description | Published |
20090057775 | Semiconductor Device and Method for Manufacturing Semiconductor Device - A method for manufacturing a semiconductor device, including etching exposed areas of a substrate using patterned nitride and insulating layers as an etch mask to form a trench in the substrate; forming a buffer layer in the trench; forming a stress-inducing layer by implanting ions into a region of the substrate around the trench using the patterned nitride and insulating layers as an ion implant mask; forming a device isolation region by filling the trench with an trench insulating layer; and removing the patterned nitride and insulating layers. | 03-05-2009 |
20090140354 | Semiconductor Device and Method for Manufacturing the Same - Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes a gate structure which includes a silicon oxynitride (SiON) layer formed on a semiconductor substrate, a hafnium silicon oxynitride (HfSiON) layer formed on the silicon oxynitride (SiON) layer, a polysilicon layer formed on the hafnium silicon oxynitride (HfSiON) layer, and a silicide layer formed on the polysilicon layer, spacers at sidewalls of the gate structure, and source and drain regions at opposite sides of the gate structure. | 06-04-2009 |
20100019323 | Semiconductor Device and Method of Manufacturing the Same - Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device comprises a gate electrode on a semiconductor substrate having a device isolation region, a first drain spacer on one side of the gate electrode, a second drain spacer next to the first drain spacer, a first source spacer on an opposite side of the gate electrode and a portion of the semiconductor substrate where a source region is to be formed, a second source spacer on side and top surfaces of the first source spacer, and LDDs adjacent to the first drain spacer and below the first source spacers, wherein the LDD below the first source spacer is thinner than the LDD adjacent to the first drain spacer. | 01-28-2010 |
20100019327 | Semiconductor Device and Method of Fabricating the Same - Disclosed are a semiconductor device and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having first and second active areas defined thereon by isolation layers, a first gate electrode in the first active area, in which the first gate electrode includes a first silicide, and a second gate electrode in the second active area, in which the second gate electrode includes a second silicide having a composition ratio of silicon different from a composition ratio of silicon of the first silicide. | 01-28-2010 |
20100065916 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes an isolation area formed on a semiconductor substrate to define NMOS and PMOS areas, a gate insulating layer and a gate formed on each of the NMOS and PMOS areas, a primary gate spacer formed at sides of the gate, LDD areas formed in the semiconductor substrate at sides of the gate, a secondary gate spacer formed at sides of the primary gate spacer, source and drain areas formed in the semiconductor substrate at sides of the gate of the PMOS area; and source and drain areas formed in the semiconductor substrate at sides of the gate of the NMOS area, wherein the source and drain areas of the NMOS area are deeper than the source and drain areas of the PMOS area. | 03-18-2010 |
20100123204 | Semiconductor Device and Method for Fabricating the Same - The present disclosure relates to a semiconductor device and a method of forming the semiconductor device that includes forming a gate insulating film on a semiconductor substrate, forming a polysilicon layer containing fluorine on the gate insulating film, forming a gate pattern by patterning the gate insulating film and the polysilicon layer, forming a metal layer on the semiconductor substrate including the gate pattern, and reacting the metal layer with the patterned polysilicon layer to form an FUSI dual gate having a lower Si-rich silicide layer and an upper Ni-rich silicide layer. The present method can reliably control a work function of an FUSI dual gate formed thereby, improve a device performance and an NBTI characteristic by preventing Vfb from shifting. The present invention is generally applicable to high performance devices, as well as lower power devices and memory devices. | 05-20-2010 |
Patent application number | Description | Published |
20130267976 | LANCET-SEPARABLE LANCET DEVICE - A lancet-separable lancet device according to an exemplary embodiment of the present invention includes: a lancet holder having a lancet seat to mount a lancet at one end and a separation hole at the other end; an operating mechanism disposed at the other end of the lancet holder so that the lancet holder is loaded and released by traveling along a predetermined path; a housing receiving the operating mechanism and having one end coupled to the lancet holder; an operation switch connected to the operating mechanism and operating the operating mechanism by pressing it; a cover covering one end of the housing and having a through-hole at the center through which a lancet needle of the lancet instantaneously protrudes; and a lancet separation mechanism disposed at the other side of the lancet holder and separating the lancet from the lancet holder by being inserted into the separation hole of the lancet holder. | 10-10-2013 |
20130267977 | LANCET HOLDER AND LANCET DEVICE INCLUDING THE SAME - The present invention provides a lancet holder that can smoothly and accurately hold all of lancets with different cross-sections and diameters and can keep them vertical, and a lancet device including the lancet holder. | 10-10-2013 |
20130267979 | LANCET DEVICE WITH ADJUSTABLE HYPODERMIC PENETRATION DEPTH - A lancet device with an adjustable hypodermic penetration depth according to an exemplary embodiment of the present invention includes: a lancet holder having a lancet seat to mount a lancet at one end; an operating mechanism disposed at the other end of the lancet holder and loading and releasing the lancet holder along a predetermined path; a depth adjusting member receiving the lancet holder and having at least two grooves formed at a predetermined angle on the circumferential surface of one end to form inclined passages clockwise or counterclockwise; and a housing receiving the lancet holder and the operating mechanism and having a protrusion that is formed on the inner side of an end and fitted step by step in the grooves when the depth adjusting member turns at a predetermined angle. | 10-10-2013 |
20130274781 | RELEASING STRUCTURE FOR LANCING DEVICE - A releasing structure for a lancing device according to an exemplary embodiment of the present invention may include: a lancet body with a lancet at the front; a lancet holder mounted with the lancet body with the lancet at the front; a stem disposed behind the lancet holder and moving the lancet holder forward/backward; a rotary housing pushing/pulling the stem while turning forward at a predetermined angle about a rotational axis defined in the movement direction of the lancet; a torsion spring storing torque for turning the rotary housing forward at a predetermined angle; and a loading handle transmitting torque to the torsion spring while turning forward at a predetermined angle. | 10-17-2013 |
20130281882 | LANCET DEVICE - The present invention relates to a lancet device that can solve the problem of falling or losing a cover when mounting or separating a lancet and reduce the pain that accompanies blood-taking. A lancet device according to an exemplary embodiment of the present invention includes: a lancet holder having a lancet seat to mount a lancet at one end; an operating mechanism disposed at the other end of the lancet holder and loading and releasing the lancet holder along a predetermined path; and an a housing receiving the operating mechanism and having one end coupled to the lancet holder, and further includes a cover that covers the housing so that the lancet holder is received in the housing, is at least partially connected with the housing in order not to separate from the housing in use, and has protrusions on the front part. | 10-24-2013 |
Patent application number | Description | Published |
20080237744 | Semiconductor Device and Manufacturing Method Thereof - Provided is a semiconductor device and manufacturing method thereof. The semiconductor device includes a gate dielectric on a semiconductor substrate; and a gate electrode on the gate dielectric. The gate dielectric has a structure in which a buffer dielectric and a dielectric layer including a high-k material are stacked. The gate dielectric can be formed so as to reduce surface roughness between the gate dielectric and the semiconductor substrate and to improve the dielectric constant of the gate dielectric. | 10-02-2008 |
20080283937 | Semiconductor Device and Method for Fabricating the Same - Provided are a semiconductor device and a method for fabricating the same. The semiconductor device can include a transistor structure, including a gate dielectric on a substrate, a gate electrode on the gate dielectric, a spacer at sidewalls of the gate electrode, and source/drain regions in the substrate; and an interlayer dielectric on the transistor structure where an air gap is provided in a region between the spacer, the interlayer dielectric, and the source/drain region of the substrate. | 11-20-2008 |
20090014810 | METHOD FOR FABRICATING SHALLOW TRENCH ISOLATION AND METHOD FOR FABRICATING TRANSISTOR - A method of forming a shallow trench isolation includes sequentially forming a pad oxide layer and a pad nitride layer over a semiconductor substrate. A portion of the pad nitride layer is etched and patterned. The patterned pad nitride layer is used as a etching mask to etch the pad oxide layer and the semiconductor substrate, thus forming a trench. An oxide layer is formed over the surface of the trench by an oxidation process. A barrier liner layer is formed over the oxide layer to create a tensile stress in a vertical direction to the semiconductor substrate. The trench is filled with insulation material and then planarized to expose a top face of the patterned pad nitride layer. A shallow trench isolation structure is completed by removing the patterned pad nitride layer and pad oxide layer. The process prevents a divot effect cased on an edge area of shallow trench isolation structure. | 01-15-2009 |
20090142920 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes can prevent defects of a semiconductor device due to the deterioration of electro migration (EM)/stress migration (SM) properties of the device as a result of metal corrosion and void generation in burying a novolac material. Embodiments can also prevent the generation of fencing in a metal wire structure. | 06-04-2009 |