Patent application number | Description | Published |
20090008786 | Sputtering Target - The present invention provides a sputtering target comprising aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm and preferably in the range of 0.1 to 50 ppm and more preferably from 0.1 to 10 ppm weight which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target. | 01-08-2009 |
20090022982 | Electronic Device, Method of Manufacture of Same and Sputtering Target - An electronic device having a first electrode including a metal oxide and a second electrode including an aluminum alloy film and manufacturing technology therefor. The second electrode is directly contacted and electrically connected to the first electrode, wherein, in the contact interface between the aluminum alloy film and said first electrode, at least a part of alloy components constituting the aluminum alloy film exist as a precipitate extending across the contact interface to contact the metal oxide to the aluminum alloy film by the precipitate. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows for elimination of a barrier metal in such an electronic device. | 01-22-2009 |
20090214374 | High purity target manufacturing methods - A method for producing a high purity tungsten sputtering target. The method includes heat treating of high purity tungsten powder in order to consolidate it into a blank with density providing closed porosity. The consolidation may be achieved by hot pressing, HIP or any other appropriate method. Next, this plate is rolled to produce target blanks of approximate size and further increased density of the material. The method may be applicable to a variety of blanks including round shape target blanks, for example, consisting of tungsten, molybdenum, tantalum, hafnium, etc. | 08-27-2009 |
20100000860 | Copper Sputtering Target With Fine Grain Size And High Electromigration Resistance And Methods Of Making the Same - The present invention generally provides a sputtering target comprising copper and a total of 0.001 wt %˜10 wt % alloying element or elements chosen from the group consisting of Al, Ag, Co, Cr, Ir, Fe, Mo, Ti, Pd, Ru, Ta, Sc, Hf, Zr, V, Nb, Y, and rare earth metals. An exemplary copper sputtering containing 0.5 wt % aluminum has superfine grain size, high thermal stability, and high electromigration resistance, and is able to form films with desired film uniformity, excellent resistance to electromigration and oxidation, and high adhesion to dielectric interlayer. An exemplary copper sputtering containing 12 ppm silver has superfine grain size. This invention also provides methods of manufacturing copper sputtering targets. | 01-07-2010 |
20100038241 | Systems and methods for a target and backing plate assembly - A target and backing plate assembly and method of making the same. The target and backing plate assembly provides a mechanical interlock between the target and backing plate in addition to diffusion bonding between dissimilar materials comprising the target and backing plate. An interlayer may also be used between the target and backing plate. A plurality of ridges, or other salient surface features on one of the target and backing plate are joined to corresponding members or channels on the other of the target and backing plate. The dissimilar materials of the target and backing plate fill negative angled cavities formed by the plurality of ridges and corresponding channels or members of the target and backing plate to accommodate the diffusion bonded dissimilar materials. A target and backing plate assembly with increased strength results. | 02-18-2010 |
20100044415 | Sputtering target assembly and method of making same - A method for producing a sputtering target assembly bonded to a backing plate. The method includes bonding a target ( | 02-25-2010 |
20110139614 | SPUTTERING TARGET WITH AN INSULATING RING AND A GAP BETWEEN THE RING AND THE TARGET - A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target. | 06-16-2011 |
20110203921 | METHOD OF BONDING ROTATABLE CERAMIC TARGETS TO A BACKING STRUCTURE - This invention relates to a rotatable cylindrical magnetron sputtering apparatus and related process. More specifically, the invention relates to a cylindrical target assembly for a cylindrical magnetron sputtering device which includes a target portion where the target portion is metal, metal oxide, or ceramic and is not bonded to any backing tube. Instead, the cylindrical target is resiliently, yet fixedly mounted to the backing tube by a multiplicity of resilient, yieldable contacts. The assembly allows the target portion to heat up uniformly and expand, thereby allowing the cylindrical magnetron to operate at increased power levels. | 08-25-2011 |
20110219847 | CIRCULAR GROOVE PRESSING MECHANISM AND METHOD FOR SPUTTERING TARGET MANUFACTURING - A method of making metal target blank using circular groove pressing includes pressing a metal or metal alloy target blank in a first circular grooved pressing die set into a first concentric corrugated shape while maintaining an original diameter of the target blank to create concentric rings of shear deformation in the target blank. Forces are then applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition. The target blank is pressed in a second circular grooved die set into a second concentric corrugated shape while maintaining the original diameter of the target blank, wherein the second die set has a groove pattern offset from a groove pattern of the first die set so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed. Forces are again applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition. | 09-15-2011 |
20120000594 | SPUTTERING TARGET ASSEMBLY AND METHOD OF MAKING SAME - A method for producing a sputtering target assembly bonded to a backing plate. The method includes bonding a target to a high strength backing plate and further creating a vacuum seal between the target and the backing plate using friction stir welding processes. | 01-05-2012 |
20120267243 | SYSTEMS AND METHODS FOR A TARGET AND BACKING PLATE ASSEMBLY - A target and backing plate assembly and method of making the same. The target and backing plate assembly provides a mechanical interlock between the target and backing plate in addition to diffusion bonding between dissimilar materials comprising the target and backing plate. An interlayer may also be used between the target and backing plate. A plurality of ridges, or other salient surface features on one of the target and backing plate are joined to corresponding members or channels on the other of the target and backing plate. The dissimilar materials of the target and backing plate fill negative angled cavities formed by the plurality of ridges and corresponding channels or members of the target and backing plate to accommodate the diffusion bonded dissimilar materials. A target and backing plate assembly with increased strength results. | 10-25-2012 |
20120298506 | SPUTTERING TARGET - A sputtering target made of aluminum and one or more alloying elements including Ni, Co, Ti, V, Cr, Mn, Mo, Nb, Ta, W, and rare earth metals (REM). The addition of very small amounts of alloying element to pure aluminum and aluminum alloy target improves the uniformity of the deposited wiring films through affecting the target's recrystallization process. The range of alloying element content is 0.01 to 100 ppm by weight, which is sufficient to prevent dynamic recrystallization of pure aluminum and aluminum alloys, such as 30 ppm Si alloy. The addition of small amount of alloying elements increases the thermal stability and electromigration resistance of pure aluminum and aluminum alloys thin films while sustaining their low electrical resistivity and good etchability. This invention also provides a method of manufacturing microalloyed aluminum and aluminum alloy sputtering target. | 11-29-2012 |
20120305393 | SPUTTER TARGET - In one aspect of the invention, a sputter target is provided comprising a backing plate ( | 12-06-2012 |
20140034490 | DIFFUSION-BONDED SPUTTER TARGET ASSEMBLY AND METHOD OF MANUFACTURING - A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al inter-layer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa. | 02-06-2014 |
20140311900 | SILICON SPUTTERING TARGET WITH SPECIAL SURFACE TREATMENT AND GOOD PARTICLE PERFORMANCE AND METHODS OF MAKING THE SAME - A sputter target assembly comprising a Si target and a backing plate is provided wherein the backing plate is bonded to the target. The Si target comprises a smooth, mirror-like surface and has a surface roughness of less than about 15.0 Angstroms. Methods are provided for producing silicon target/backing plate assemblies wherein a silicon blank is processed to remove scratches from the blank surface resulting in a mirror like surface on the target, and a surface roughness of 15.0 Angstroms or less. The method comprises a first and second cleaning step with the first step being performed before the scratch removal step, and the second step being performed after the scratch removal. | 10-23-2014 |