Patent application number | Description | Published |
20120202397 | MULTI-SITE MODIFIED SP1 POLYPEPTIDES AND USES THEREOF - The present invention, in some embodiments thereof, relates to material science in general, and, more particularly, to sequence variants of Stable Protein 1 (SP1), to uses thereof, for binding of carbon nanotubes, production of composite polymers and polymer materials, such as fabrics, based on SP1-polypeptide-carbon nanotube-complexes, and the use thereof for enhancing conductivity in tire. | 08-09-2012 |
20150152311 | MULTI-SITE MODIFIED SP1 POLYPEPTIDES AND USES THEREOF - The present invention, in some embodiments thereof, relates to material science in general, and, more particularly, to sequence variants of Stable Protein 1 (SP1), to uses thereof, for binding of carbon nanotubes, production of composite polymers and polymer materials, such as fabrics, based on SP1-polypeptide-carbon nanotube-complexes, and the use thereof for enhancing conductivity in tire. | 06-04-2015 |
Patent application number | Description | Published |
20080239807 | Transition areas for dense memory arrays - A non-volatile memory chip has word lines spaced a sub-F (sub-minimum feature size F) width apart with extensions of the word lines in at least two transition areas. Neighboring extensions are spaced at least F apart. The present invention also includes a method for word-line patterning of a non-volatile memory chip which includes generating sub-F word lines with extensions in transition areas for connecting to peripheral transistors from mask generated elements with widths of at least F. | 10-02-2008 |
20080266954 | Transition areas for dense memory arrays - A non-volatile memory chip has word lines spaced a sub-F (sub-minimum feature size F) width apart with extensions of the word lines in at least two transition areas. Neighboring extensions are spaced at least F apart. The present invention also includes a method for word-line patterning of a non-volatile memory chip which includes generating sub-F word lines with extensions in transition areas for connecting to peripheral transistors from mask generated elements with widths of at least F. | 10-30-2008 |
20090032862 | Non-volatile memory cell and non-volatile memory device using said cell - A non-volatile electrically erasable programmable read only memory (EEPROM) capable of storing two bit of information having a non-conducting charge trapping dielectric, such as silicon nitride, sandwiched between two silicon dioxide layers acting as electrical insulators is disclosed. The invention includes a method of programming, reading and erasing the two bit EEPROM device. The non-conducting dielectric layer functions as an electrical charge trapping medium. A conducting gate layer is placed over the upper silicon dioxide layer. A left and a right bit are stored in physically different areas of the charge trapping layer, near left and right regions of the memory cell, respectively. Each bit of the memory device is programmed in the conventional manner, using hot electron programming, by applying programming voltages to the gate and to either the left or the right region while the other region is grounded. Hot electrons are accelerated sufficiently to be injected into the region of the trapping dielectric layer near where the programming voltages were applied to. The device, however, is read in the opposite direction from which it was written, meaning voltages are applied to the gate and to either the right or the left region while the other region is grounded. Two bits are able to be programmed and read due to a combination of relatively low gate voltages with reading in the reverse direction. This greatly reduces the potential across the trapped charge region. This permits much shorter programming times by amplifying the effect of the charge trapped in the localized trapping region associated with each of the bits. In addition, both bits of the memory cell can be individually erased by applying suitable erase voltages to the gate and either left or right regions so as to cause electrons to be removed from the corresponding charge trapping region of the nitride layer. | 02-05-2009 |
20090175089 | Retention in NVM with top or bottom injection - Retention of charges in a nonvolatile memory (NVM) cell having a nitride-based injector (such as SiN, SIRN, SiON) for facilitating injection of holes into a charge-storage layer (for NROM, nitride) of a charge-storage stack (for NROM, ONO) may be improved by providing an insulating layer (for NROM, oxide) between the charge-storage layer and the injector has a thickness of at least 3 nm. Top and bottom injectors are disclosed. Methods of operating NVM cells are disclosed. The NVM cell may be NROM, SONOS, or other oxide-nitride technology NVM cells such as SANOS, MANOS, TANOS. | 07-09-2009 |
20090201741 | Non-volatile memory cell with injector - In a nonvolatile memory (NVM) cell, an injector having one or more layers of material with a lower potential barrier for holes is disposed between a charge storage stack and a source of holes (the gate for top injection, the substrate for bottom injection), to facilitate hole tunneling from the source of holes into the charge-storage layer of the charge storage stack. The injector has a barrier potential for holes which is less than an insulating layer of the charge-storage stack which is oriented towards the source of holes. A multi-layer crested barrier injector may have layers of increasing potential barriers for holes from the source to the charge-storage layer. Methods of operating NVM cells are disclosed. The NVM cell may be NROM, SONOS, or other oxide-nitride technology NVM cells such as SANOS, MANOS, TANOS. | 08-13-2009 |
20090231915 | Reading array cell with matched reference cell - A method for reading a bit of a memory cell in a non-volatile memory (NVM) cell array, the method comprising providing a memory cell comprising a bit to be read and at least one other bit not to be read, and reading the bit to be read with respect to a multi-bit reference cell, the reference cell comprising a first bit at a first non-ground programmed state and a second bit at a second non-ground programmed state. Compared with the prior art, the present invention may enable achieving an improved sensing accuracy together with improved read disturb immunity. | 09-17-2009 |
20100173464 | Non-volatile memory structure and method of fabrication - A method for creating a non-volatile memory array includes implanting pocket implants in a substrate at least between mask columns of a given width and at least through an ONO layer covering the substrate, generating increased-width polysilicon columns from the mask columns, generating bit lines in the substrate at least between the increased-width polysilicon columns and depositing oxide at least between the polysilicon columns. | 07-08-2010 |
20110122688 | Reading array cell with matched reference cell - A method for reading a bit of a memory cell in a non-volatile memory (NVM) cell array, the method comprising providing a memory cell comprising a bit to be read and at least one other bit not to be read, and reading the bit to be read with respect to a multi-bit reference cell, the reference cell comprising a first bit at a first non-ground programmed state and a second bit at a second non-ground programmed state. Compared with the prior art, the present invention may enable achieving an improved sensing accuracy together with improved read disturb immunity. | 05-26-2011 |
20120098052 | Minimizing disturbs in dense non volatile memory arrays - A nitride read only memory (NROM) array includes a silicon substrate having trenches therein, a plurality of polysilicon bit lines deposited in the trenches and connecting columns of memory cells, a layer of (oxide nitride oxide) ONO at least within the memory cells and a plurality of polysilicon word lines to connect rows of the memory cells. An NROM array with a virtual ground architecture includes a plurality of bit lines to connect columns of NROM memory cells, a layer of ONO at least within the memory cells and a plurality of word lines to connect rows of the NROM memory cells, wherein a distance between word lines is at least twice the width of the word lines. | 04-26-2012 |
20120127796 | RETENTION IN NVM WITH TOP OR BOTTOM INJECTION - Retention of charges in a nonvolatile memory (NVM) cell having a nitride-based injector (such as SiN, SIRN, SiON) for facilitating injection of holes into a charge-storage layer (for NROM, nitride) of a charge-storage stack (for NROM, ONO) may be improved by providing an insulating layer (for NROM, oxide) between the charge-storage layer and the injector has a thickness of at least 3 nm. Top and bottom injectors are disclosed. Methods of operating NVM cells are disclosed. The NVM cell may be NROM, SONOS, or other oxide-nitride technology NVM cells such as SANOS, MANOS, TANOS. | 05-24-2012 |
20130116620 | AIR TRAP FOR INTRAVENOUS PUMP - An intravenous pump system includes an intravenous pump having an air bubble detector, a separate air trap module and a patient line. The air trap module is connectable to a set interface upon which the pump can operate. The air trap module includes an air chamber capable of receiving fluids and air, a plurality of valves controlling the flow of the fluids and air, and an air vent. The patient line is connectable to the air trap module and to a patient. The air trap module includes an actuator to control the state of the valves to enable, at least during a venting mode, the pump to push air out of the air chamber via the vent without disconnecting the patient from the patient line. | 05-09-2013 |
20130279370 | METHODS, APPARATUS AND SYSTEMS FOR MEDICAL DEVICE COMMUNICATION, CONTROL AND LOCALIZATION - Disclosed is a medical device including a therapeutic component to provide one or more therapeutic functionalities during whilst in therapeutic mode, and may further enter into a device sleep mode (DSM), a transceiver configured to provide the medical device with wireless connectivity and which may further transition into a transceiver sleep mode (TSM) substantially concurrent with transition into DSM, the transceiver may intermittently transition between TSM and a scan mode, during which scan mode the transceiver may listen for a wireless packet addressed to the transceiver, and a localization module which may emit a discovery signal upon receipt of the wireless packet addressed to the transceiver. | 10-24-2013 |
20140119954 | Methods, Circuits, Devices, Apparatuses, Encasements and Systems for Identifying if a Medical Infusion System is Decalibrated - Disclosed is an infusion pump which may include a native pumping mechanism to drive fluids through a functionally associated conduit, at least one native sensor to sense a physical characteristic of the fluid within the conduit and computing circuitry having a decalibration test mode to determine whether the infusion pump is decalibrated. The computing circuitry may be adapted to receive output from at least one native sensor during the decalibration test mode | 05-01-2014 |
Patent application number | Description | Published |
20090118043 | VARIABLE DIAMETER GEAR DEVICE AND VARIABLE TRANSMISSIONS USING SUCH DEVICES - A variable diameter gear device for use in a variable ratio transmission system includes a gear tooth set deployed around an axle which defines an axis of rotation. The gear tooth set includes at least two displaceable gear tooth sequences, each including a multiple gear teeth spaced at a uniform pitch, and a diameter changer mechanically linked to the axle and to the gear tooth set. The diameter changer is deployed to transfer a turning moment between the axle and the gear tooth set, and to displace the gear tooth set so as to vary a degree of peripheral coextension between the gear tooth sequences. Specifically, the diameter changer transforms the gear device between at least two states in which the gear tooth set is deployed to provide an effective cylindrical gear with differing effective numbers of teeth. The gear device may be used either in direct engagement with another gear wheel or as part of a chain-based transmission system. | 05-07-2009 |
20110226077 | APPARATUS INCLUDING A GEAR TOOTH SEQUENCE FOR USE IN A VARIABLE TRANSMISSION - Apparatus for use in a variable ratio transmission has gear teeth ( | 09-22-2011 |
20110252909 | VARIABLE DIAMETER GEAR DEVICE WITH DIAMETER CHANGER FOR CONSTANT PITCH GEAR TOOTH SEQUENCE - A variable diameter gear device for variable ratio transmission systems has a displaceable gear tooth sequence formed from interconnected gear teeth with uniform pitch lying on a virtual cylinder coaxial with an axle of the device. A torque linkage transfers a turning moment between the axle and the gear tooth sequence. A diameter changer includes at least one disc with a spiral track to which each of the gear teeth is linked. Rotation of the discs relative to the axle causes variation of an effective diameter of the virtual cylinder while the gear tooth sequences remain on a virtual cylinder centered on the axis and the uniform pitch remains constant. | 10-20-2011 |
20130043686 | WIND TURBINE WITH DISCRETELY VARIABLE DIAMETER GEAR BOX - A wind turbine includes a rotor shaft having thereon rotor blades exposed to wind energy, a first stage gear set on the rotor shaft, a discretely variable ratio gear set coupled to the first stage gear output shaft and having a gear set output shaft, a differential on the gear set output shaft having a differential control shaft facilitating changing the gear box ratio by whole numbers of gear teeth, and a generator operating at a constant frequency coupled to an electric grid operating at the constant frequency. The wind turbine may take a variable speed input of the gear box to create a fixed speed output fed to the generator operating at constant frequency and coupled directly to the power grid without power electronics. Existing wind turbines whether fixed speed fixed pitch or variable speed variable pitch can be retrofitted with the gear box of the present invention. | 02-21-2013 |
20130134709 | Wind Turbine With Variable Speed Auxiliary Generator and Load Sharing Algorithm - An assembly for retrofitting fixed speed, doubly fed and fully converted wind turbines. A differential having an output shaft coupled to the main generator and a control shaft to change a ratio between differential input and output and coupled to the auxiliary generator. The main generator operates at constant frequency and is coupled to an electric power grid without a power converter. A variable speed auxiliary generator may be coupled to the electric grid through auxiliary power electronics. A controller may during low loads assign a full load to the auxiliary generator, during typical loads assign a variable shared load between the auxiliary and main generators based on an optimization algorithm and during high loads assign a fixed shared load between the auxiliary and main generators based on the internal gear ratio of the differential. For step-down differentials, at high loads the full load may go to the main generator. | 05-30-2013 |
20150126291 | Bevel Universal Joint - A universal joint may comprise a first joint member terminating in either a first pair of cones or a first pair of cone slices, wherein apical ends of said first pair of cones or first pair of cone slices form first and second sockets, the first and second sockets facing each other; a second joint member terminating in either a second pair of cones or a second pair of cone slices, wherein apical ends of said second pair of cones or second pair of cone slices form third and fourth sockets, the third and further sockets facing each other; a coupler fitted into the first, second, third and fourth sockets, wherein torque is transmitted directly between the first joint member and the second joint member via side walls of the two pairs of cones or cone slices. | 05-07-2015 |