Patent application number | Description | Published |
20080237834 | CHIP PACKAGING STRUCTURE AND CHIP PACKAGING PROCESS - A chip packaging structure comprising a chip, a plurality of conductive pillars surrounding the chip, an encapsulation encapsulating the chip and the conductive pillars, and a connecting layer is provided. The encapsulation has a first side and a second side corresponding to the first side. The connecting layer is disposed at the first side of the encapsulation and electrically connected between the chip and the conductive pillars. Furthermore, a chip packaging process accompanying the chip packaging structure is also provided. The chip packaging structure is more useful and powerful and is suitable for various chip packaging applications, and the chip packaging process can reduce the manufacturing time and save the production cost. | 10-02-2008 |
20110254161 | Integrated Circuit Package Having Under-Bump Metallization - An integrated circuit (IC) device uses a simple structure having X/Cu/Sn metal layers (X can be Ti or Ti/W etc.) without extra barrier layer. Thus, number of layers is reduced for a simple fabrication with good production and low cost. | 10-20-2011 |
20130313011 | INTERPOSED SUBSTRATE AND MANUFACTURING METHOD THEREOF - A manufacturing method of an interposed substrate is provided. A photoresist layer is formed on a metal carrier. The photoresist layer has plural of openings exposing a portion of the metal carrier. Plural of metal passivation pads and plural of conductive pillars are formed in the openings. The metal passivation pads cover a portion of the metal carrier exposed by openings. The conductive pillars are respectively stacked on the metal passivation pads. The photoresist layer is removed to expose another portion of the metal carrier. An insulating material layer is formed on the metal carrier. The insulating material layer covers the another portion of the metal carrier and encapsulates the conductive pillars and the metal passivation pads. An upper surface of the insulating material layer and a top surface of each conductive pillar are coplanar. The metal carrier is removed to expose a lower surface of the insulating material layer. | 11-28-2013 |
20140102772 | PACKAGING CARRIER AND MANUFACTURING METHOD THEREOF AND CHIP PACKAGE STRUCTURE - A packaging carrier includes an interposer, a dielectric layer and a built-up structure. The interposer has a first surface and a second surface opposite to each other, and a plurality of first pads and second pads located on the first surface and the second surface, respectively. The dielectric layer has a third surface and a fourth surface opposite to each other. The interposer is embedded in the dielectric layer. The second surface of the interposer is not covered by the fourth surface of the dielectric layer, and has a height difference with the fourth surface. The built-up structure is disposed on the third surface of the dielectric layer and electrically connected to the first pads of the interposer. | 04-17-2014 |
20140138142 | INTERPOSED SUBSTRATE AND MANUFACTURING METHOD THEREOF - A manufacturing method of an interposed substrate is provided. A metal-stacked layer comprising a first metal layer, an etching stop layer and a second metal layer is formed. A patterned conductor layer is formed on the first metal layer, wherein the patterned conductor layer exposes a portion of the first metal layer. A plurality of conductive pillars is formed on the patterned conductor layer, wherein the conductive pillars are separated from each other and stacked on a portion of the patterned conductor layer. An insulating material layer is formed on the metal-stacked layer, wherein the insulating material layer covers the portion of the first metal layer and encapsulates the conductive pillars and the other portion of the patterned conductor layer. The metal-stacked layer is removed to expose a lower surface opposite to an upper surface of the insulating material layer and a bottom surface of the patterned conductor layer. | 05-22-2014 |
20150097318 | MANUFACTURING METHOD OF INTERPOSED SUBSTRATE - A manufacturing method of an interposed substrate is provided. A photoresist layer is formed on a metal carrier. The photoresist layer has plural of openings exposing a portion of the metal carrier. Plural of metal passivation pads and plural of conductive pillars are formed in the openings. The metal passivation pads cover a portion of the metal carrier exposed by openings. The conductive pillars are respectively stacked on the metal passivation pads. The photoresist layer is removed to expose another portion of the metal carrier. An insulating material layer is formed on the metal cattier. The insulating material layer covers the another portion of the metal carrier and encapsulates the conductive pillars and the metal passivation pads. | 04-09-2015 |
20150371965 | HIGH DENSITY FILM FOR IC PACKAGE - The present invention discloses a high density film for IC package. The process comprises: a redistribution layer is fabricated following IC design rule, with a plurality of bottom pad formed on bottom, and with a plurality of first top pad formed on top; wherein the density of the plurality of bottom pad is higher than the density of the plurality of first top pad; and a top redistribution layer is fabricated following PCB design rule, using the plurality of the first top pad as a starting point; with a plurality of second top pad formed on top; wherein a density of the plurality of first top pad is higher than a density of the plurality of second top pad. | 12-24-2015 |
20160064254 | HIGH DENSITY IC PACKAGE - The present invention discloses a high density IC package with a core substrate. The core substrate has four lateral sides; each lateral side extends to and flushes with a corresponding lateral side of the package. Further, a bottom first redistribution circuit following IC design rule or TFTLCD design rule is fabricated on a bottom side of the core substrate, and a bottom second redistribution circuit following PCB design rule is fabricated on a bottom side of the first redistribution circuit. | 03-03-2016 |