Patent application number | Description | Published |
20150094756 | MECHANICAL TOURNIQUET APPARATUS AND METHOD OF USE - A pre-fabricated tourniquet that is easy to apply, that ensures consistent and even circumferential pressure, that is light weight, that provides standard life saving operation, and that can be utilized in any setting or situation, and related methods are provided. Mechanically constricting tourniquet apparatus and related methods are provided that are comprised of a tourniquet body, a carriage, a torsion bar, a receiver and a slider. The tourniquet is long enough to encircle a human limb, for example, an arm or leg. | 04-02-2015 |
20150133991 | PNEUMATIC TOURNIQUET APPARATUS AND METHOD OF USE - A pre-fabricated pneumatic tourniquet apparatus and related methods are provided. The tourniquet is easy to apply, ensures consistent and even circumferential pressure, is light weight, provides standard life saving operation, and can be utilized in any setting or situation. The pneumatic tourniquet apparatus is comprised of a bladder, a reservoir chassis, a retaining cover, a receiver and a slider. The bladder is elongated in shaped—long enough to wrap around most human limbs. | 05-14-2015 |
Patent application number | Description | Published |
20110139235 | CADMIUM TELLURIDE THIN FILM PHOTVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - Methods for manufacturing a cadmium telluride based thin film photovoltaic device are generally disclosed. The method can include sputtering a resistive transparent layer on a transparent conductive oxide layer from an alloy target including zinc from about 5% by weight and about 33% by weight and tin. The method can also include forming a cadmium sulfide layer on the resistive transparent layer, forming a cadmium telluride layer on the cadmium sulfide layer, and forming a back contact layer on the cadmium telluride layer. Cadmium telluride thin film photovoltaic devices are also generally disclosed including a resistive transparent layer having a mixture of zinc oxide and tin oxide having a zinc oxide concentration between about 5% and about 33% by mole fraction. | 06-16-2011 |
20110139245 | THIN FILM INTERLAYER IN CADMIUM TELLURIDE THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MANUFACTURING THE SAME - A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices. | 06-16-2011 |
20110139246 | METHODS FOR FORMING A TRANSPARENT CONDUCTIVE OXIDE LAYER ON A SUBSTRATE - Methods of depositing a transparent conductive oxide layer on a substrate are generally disclosed. A shield of greater than about 75% by weight molybdenum can be attached to a first surface of a substrate such that the shield contacts at least about 75% of the first surface. The shield can then be heated via an energy source to cause thermal exchange from the shield to the substrate to heat the substrate to a sputtering temperature. A transparent conductive oxide layer can then be sputtered on a second surface of the substrate at the sputtering temperature. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device. | 06-16-2011 |
Patent application number | Description | Published |
20110244251 | Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 10° C. to about 100° C. A cap layer including cadmium sulfide can be deposited directly on the transparent conductive oxide layer. The transparent conductive oxide layer can be annealed at an anneal temperature from about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. An intermediate substrate is also generally provided for use to manufacture a thin film photovoltaic device. | 10-06-2011 |
20110244620 | Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 10-06-2011 |
20110265868 | CADMIUM SULFIDE LAYERS FOR USE IN CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE - Cadmium telluride thin film photovoltaic devices are generally provided. The device can include a substrate, a transparent conductive oxide layer on the substrate; a resistive transparent buffer layer on the transparent conductive oxide layer; a cadmium sulfide layer on the resistive transparent buffer layer; a cadmium telluride layer on the cadmium sulfide layer; and, a back contact layer on the cadmium telluride layer. The cadmium sulfide layer can include oxygen in a molar percentage greater than 0% to about 20%. In one particular embodiment, a second cadmium sulfide layer substantially free from oxygen can be positioned between the cadmium sulfide layer and the cadmium telluride layer. | 11-03-2011 |
20110266141 | SYSTEM AND METHODS FOR HIGH-RATE CO-SPUTTERING OF THIN FILM LAYERS ON PHOTOVOLTAIC MODULE SUBSTRATES - Systems and methods for deposition of a thin film layer on photovoltaic (PV) module substrates are generally provided. The system can include a sputtering chamber configured to receive the substrates, at least two targets positioned within the sputtering chamber, and an independent power source connected to each target. Each target can be positioned within the sputtering chamber to face the substrates such that the targets are simultaneously sputtered to supply source material to a plasma field for forming a thin film layer on a surface of the substrates. The multiple targets can also be positioned such that a facing axis extending perpendicularly from a center of each target converges at a point on the surface of the substrate. | 11-03-2011 |
20110269261 | DEVICES AND METHODS OF PROTECTING A CADMIUM SULFIDE FOR FURTHER PROCESSING - Methods for protecting a cadmium sulfide layer on a substrate are provided. The method can include sputtering a cadmium sulfide layer onto a substrate from a cadmium sulfide target at a sputtering pressure (e.g., about 10 mTorr to about 150 mTorr), and sputtering a cap layer directly on the cadmium sulfide layer. The cap layer can be sputtered directly onto the cadmium sulfide layer without breaking vacuum of the sputtering pressure. Methods are also provided for manufacturing a cadmium telluride based thin film photovoltaic device through depositing a cadmium sulfide layer on a substrate, depositing a cap layer directly on the cadmium sulfide layer, heating the substrate to sublimate at least a portion of the cap layer from the cadmium sulfide layer, and then depositing a cadmium telluride layer on the cadmium sulfide layer. | 11-03-2011 |
Patent application number | Description | Published |
20100162218 | RELAXED AND EXTENDED DELEGATES - Systems and methods that enhance expressibility in a programming language (e.g., Visual Basic) via relaxation of artificial restrictions and extension of delegates associated therewith, without changing the runtime infrastructure. A stub is employed that can replace an impermissible expression in the programming language, to leverage the existing permissible expressions. | 06-24-2010 |
20100235725 | SELECTIVE DISPLAY OF ELEMENTS OF A SCHEMA SET - A schema browsing system is described herein that allows a user to quickly consume information about one or more XML schema elements of a schema set that the user is interested in and to visualize relationships of other elements to the elements of interest, irrespective of how the elements are physically stored and subdivided in XSD or other schema files. The system displays elements selected by the user and excludes portions of the schema set that are not related to the displayed elements. The system displays the selected elements along with a visual indication of the relationships between the selected elements. By repeating the process of selecting elements, the user can use the system to build up a display that includes only those elements and relationships in which the user is interested. | 09-16-2010 |
20110072413 | EMBEDDING EXPRESSIONS IN XML LITERALS - An architecture that that extends conventional computer programming languages that compile into an instance of an extensible markup language (XML) document object model (DOM) to provide support for XML literals in the underlying programming language. This architecture facilitates a convenient short cut by replacing the complex explicit construction required by conventional systems to create an instance of a DOM with a concise XML literal for which conventional compilers can translate into the appropriate code. The architecture allows these XML literals to be embedded with expressions, statement blocks or namespaces to further enrich the power and versatility. In accordance therewith, context information describing the position and data types that an XML DOM can accept can be provided to the programmer via, for example, an integrated development environment. Additionally, the architecture supports escaping XML identifiers, a reification mechanism, and a conversion mechanism to convert between collections and singletons. | 03-24-2011 |
20130290987 | TYPE INFERENCE AND TYPE-DIRECTED LATE BINDING - Systems and methods that enhance and balance a late binding and an early binding in a programming language, via supplying an option component to opt-in (or opt-out) late binding, and wherein a late binding is triggered based on a static type for the variable (e.g., object or a type/string.) Additionally, the variable is enabled to have different static types at different regions (e.g., a program fragment) of the programming language. | 10-31-2013 |