Patent application number | Description | Published |
20090068599 | METHOD OF MANUFACTURING IMAGE SENSOR - Provided is a method of manufacturing image sensor capable of maximizing light condensing efficiency so that the light input through a micro-lens is condensed onto a light receiving element. According to the present invention, inner micro-lenses or a condensing efficiency of the light input through the micro-lens. Therefore, light condensing efficiency of the light condensed onto the light receiving element in the image sensor can be improved. | 03-12-2009 |
20090135283 | PIXEL ARRAY STRUCTURE FOR CMOS IMAGE SENSOR AND METHOD OF THE SAME - Provided is a pixel array structure and of a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of arranging the same in which unit pixels are arranged diagonally to adjacent unit pixels in a row and column direction. For the arrangement, a pixel array in even rows is shifted to a half of a pitch in a column direction with respect to a pixel array in odd rows. | 05-28-2009 |
20100013907 | Separation Type Unit Pixel Of 3-Dimensional Image Sensor and Manufacturing Method Thereof - A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer. Accordingly, manufacturing processes can be simplified by constructing the upper wafer using only a photodiode and the lower wafer using the pixel array region except the photodiode, and costs are reduced since transistors are not included in the upper wafer portion, which in turn cannot affect the interaction with light. | 01-21-2010 |
20100019130 | CHIP-STACKED IMAGE SENSOR - A chip-stacked image sensor obtained by embodying an image sensor cell in two chips and combining the chips with each other is provided. The chip-stacked image sensor includes first and second semiconductor chips. The first semiconductor chip includes a plurality of image signal sensing cells for generating image charges corresponding to image signals sensed by at least four photodiodes and outputting the generated image charges through at least two common terminals and a plurality of image charge transmission pads. The second semiconductor chip includes a plurality of image signal conversion cells for converting the image signals into electrical signals and a plurality of image charge receiving pads. Here, the image charges generated by the image signal sensing cells are transmitted to corresponding image signal conversion cells via the plurality of image charge transmission pads and the plurality of image charge receiving pads. | 01-28-2010 |
20100118131 | FINGERPRINT RECOGNITION DEVICE AND USER AUTHENTICATION METHOD FOR CARD INCLUDING THE FINGERPRINT RECOGNITION DEVICE - Provided are a fingerprint recognition device which performs a fingerprint recognition function and can be inserted into a card, the card including the fingerprint recognition device, and a user authentication method for the card including the fingerprint recognition device. The fingerprint recognition device includes a fingerprint touch unit that a fingerprint touches and an image sensor capturing a fingerprint pattern by using a reflected wave reflected from the fingerprint touch unit | 05-13-2010 |
20100177221 | PIXEL ARRAY HAVING WIDE DYNAMIC RANGE AND GOOD COLOR REPRODUCTION AND RESOLUTION AND IMAGE SENSOR USING THE PIXEL ARRAY - Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes. | 07-15-2010 |
20100182467 | UNIT PIXEL HAVING 2-TRANSISTOR STRUCTURE FOR IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A unit pixel having a pixel constructed with a photodiode and a 2-transistor for an image sensor is disclosed. The unit pixel having a 2-transistor structure for an image sensor includes: a photodiode containing impurities having an opposite type of a semiconductor material; a reset transistor connected to the photodiode to initialize the photodiode; and a transistor having selecting and reading-out functions connected to the photodiode to have functions of controlling connection between a pixel and an external lead-out circuit and reading-out the information of the pixel. Accordingly, an aperture surface rises and a pixel size decreases, so that sensitivity increases. Also, the fill factor of the photodiode increases significantly due to a decrease of the number of the transistor, so that the sensitivity increases and costs reduce. | 07-22-2010 |
20100196206 | DIAGNOSIS DEVICE USING IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME - A diagnosis device using an image sensor and a method of manufacturing the same are provided. The diagnosis device using the image sensor includes: a substrate in which an image sensor including a plurality of optical sensors is formed; an insulation layer formed on the substrate; and a plurality of wells formed in the insulation layer in correspondence with the plurality of optical sensors, the plurality of wells into which reference samples for biochemical reactions with a target sample are inserted. | 08-05-2010 |
20100200895 | UNIT PIXEL IMPROVING IMAGE SENSITIVITY AND DYNAMIC RANGE - Provided are a unit pixel for improving sensitivity in low illumination conditions and a method of manufacturing the unit pixel. The unit pixel includes: a photodiode generating image charges corresponding to an image signal; a transfer transistor transferring the image charges to a floating diffusion area; and a reset transistor having a terminal connected to the floating diffusion area and the other terminal applied with a power supply, wherein concentration of impurity ions implanted into the floating diffusion area is lower than concentration of impurity ions implanted into a diffusion area of the reset transistor applied with the power supply. | 08-12-2010 |
20100213348 | SEPARATED UNIT PIXEL PREVENTING SENSITIVITY REDUCTION AND THE DRIVING METHOD USING THE UNIT PIXEL - Provided are a separation type unit pixel for preventing sensitivity reduction to prevent a depletion area from decreasing and a method of driving the unit pixel. The separation type unit pixel for preventing sensitivity reduction includes: a substrate; a photodiode constructed with a junction of a P-type diffusion area and an N-type diffusion area which are formed under a surface of the substrate in a vertical direction; a gate electrode conductor which is disposed on an upper portion of the surface of the substrate to be adjacent to the N-type or P-type diffusion area; a floating diffusion area formed to be adjacent to another surface of the gate electrode conductor; and a sensitivity reduction preventing conductor disposed on an upper portion of the photodiode area to cover the photodiode area. | 08-26-2010 |
20100239457 | BIOCHIP - Provided is a biochip including a high-sensitivity image sensor. The biochip includes: a biochip layer including a plurality of reaction zones in which biochemical reactions occur formed as concaves, the reaction zone including a reference material at a lower portion and a target material at an upper portion; and an image sensor layer which is formed below the biochip layer and includes a plurality of photo detectors. Since the biochip is implemented as a single chip including the biochip layer and the image sensor layer, light loss in the luminescence or fluorescence operation can be reduced. In addition, additional devices such as a scanner which are needed for a general biochip are not needed, so that sensitivity is improved, and low-cost biochips can be implemented. | 09-23-2010 |
20100252718 | 4T-4S STEP & REPEAT UNIT PIXEL AND IMAGE SENSOR INCLUDING THE UNIT PIXEL - Disclosed are a 4T-4S step & repeat unit pixel used in an image sensor and an image sensor having the same. The 4T-4S step & repeat unit pixel has four diffusion area patterns for photodiodes and three diffusion area patterns for an image signal conversion circuit. An aperture ratio of the image sensor increases in maximum by using four photodiodes arranged in a diagonal direction from each other and three diffusion area patterns arranged between the photodiodes near their edges. | 10-07-2010 |
20100323926 | DIAGNOSIS DEVICE AND METHOD OF MANUFACTURING THE DIAGNOSIS DEVICE - Provided are a diagnosis device in which a bio-chemical reaction between a reference sample and a target sample occurs and a result of the bio-chemical reaction can be detected and a method of manufacturing the diagnosis device. The diagnosis device includes an image sensor where a plurality of photo-detectors are formed; a polymer layer which is made of a polymer material and formed on an upper portion of the image sensor; and a plurality of wells which are formed corresponding to the plurality of photo-detectors on the polymer layer, wherein an inner portion of each well is empty. | 12-23-2010 |
20110172129 | Biochip Having Image Sensor with Back Side Illumination Photodiode - A biochip having an image sensor with a back side illumination photodiode structure includes: a biochip layer; and an image sensor layer attached to one surface of the biochip layer and configured to sense light with biochemical reaction information, which is emitted from the biochip layer, wherein the image sensor layer includes a plurality of light sensing parts which receive the light directed toward a back side of a wafer. | 07-14-2011 |
20120264251 | SEPARATION TYPE UNIT PIXEL OF 3-DIMENSIONAL IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer. | 10-18-2012 |
20130242147 | PIXEL ARRAY HAVING WIDE DYNAMIC RANGE AND GOOD COLOR REPRODUCTION AND RESOLUTION AND IMAGE SENSOR USING THE PIXEL ARRAY - Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes. | 09-19-2013 |
20140191357 | MULTI-SUBSTRATE IMAGE SENSOR HAVING A DUAL DETECTION FUNCTION - The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is configured such that a first photodiode is formed on a first substrate, a second photodiode is formed on a second substrate, the two substrates are aligned with and bonded to each other to electrically couple the two photodiodes to each other, thereby forming a complete photodiode within one pixel. | 07-10-2014 |
20140293099 | PIXEL ARRAY HAVING WIDE DYNAMIC RANGE AND GOOD COLOR REPRODUCTION AND RESOLUTION AND IMAGE SENSOR USING THE PIXEL ARRAY - Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes. | 10-02-2014 |
20140327061 | SUBSTRATE STACKED IMAGE SENSOR HAVING A DUAL DETECTION FUNCTION - The present invention relates to a substrate stacked image sensor having a dual detection function, in which when first to fourth photodiodes are formed in a first substrate, a fifth photodiode is formed in a second substrate, and the substrates are stacked and combined with each other, the first to fourth photodiodes and the fifth photodiode are combined with each other to obtain a complete photodiode as an element of one pixel, and signals individually detected in each photodiode are selectively read or added to be read according to necessity. To this end, the first to fourth photodiodes are formed in the first substrate, the fifth photodiode is formed in the second substrate, the first to fourth photodiodes and the fifth photodiode make electrical contact with each other, and pixel array sizes of the first substrate and the second substrate are allowed to be different from each other, so that sensor resolution of the first substrate and sensor resolution of the second substrate are different from each other. | 11-06-2014 |
20150042694 | LUMINANCE COMPENSATION APPARATUS FOR ORGANIC LIGHT EMITTING DIODE PANEL - Disclosed is a luminance compensation apparatus of an organic light emitting diode panel including a reference pixel element unit that is installed at an outer peripheral portion of a display area on an organic light emitting diode panel and operate corresponding to a pixel element aligned in the display area, and a driving chip that is provided in an area including the reference pixel element unit of the outer peripheral portion of the display area, compares a luminance value of light incident from the reference pixel element unit with a reference luminance value to calculate a luminance deviation value based on a comparison result, controls driving of pixel elements aligned in the display area according to the luminance deviation value, and allows light, luminance deviation of which has been compensated, to be irradiated. | 02-12-2015 |