Patent application number | Description | Published |
20100270620 | System and Method for Constructing Shielded Seebeck Temperature Difference Sensor - An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor. | 10-28-2010 |
20100301332 | Detecting a Fault State of a Semiconductor Arrangement - Disclosed is a method for detecting a mechanical fault state of a semiconductor arrangement, using a temperature profile. | 12-02-2010 |
20110051302 | INTEGRATED POWER DEVICE AND METHOD - A method of protecting a circuit arrangement including an integrated power dissipating device, and a circuit arrangement including an integrated power dissipating device. One method provides measuring a temperature difference between temperatures at a first position and a second position of the arrangement, the second position being distant to the first position; generating a thermal protection signal, and generating the control signal dependent on the thermal protection signal; and the thermal protection signal assuming a first signal level, if the temperature difference rises to a first temperature difference threshold, and assuming a second signal level, if the temperature difference falls to a second temperature difference threshold. | 03-03-2011 |
20120175687 | System and Method for Manufacturing a Temperature Difference Sensor - An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor. | 07-12-2012 |
20140251408 | System and Method for Manufacturing a Temperature Difference Sensor - An embodiment of the invention relates to a Seebeck temperature difference sensor that may be formed in a trench on a semiconductor device. A portion of the sensor may be substantially surrounded by an electrically conductive shield. A plurality of junctions may be included to provide a higher Seebeck sensor voltage. The shield may be electrically coupled to a local potential, or left electrically floating. A portion of the shield may be formed as a doped well in the semiconductor substrate on which the semiconductor device is formed, or as a metal layer substantially covering the sensor. The shield may be formed as a first oxide layer on a sensor trench wall with a conductive shield formed on the first oxide layer, and a second oxide layer formed on the conductive shield. An absolute temperature sensor may be coupled in series with the Seebeck temperature difference sensor. | 09-11-2014 |
Patent application number | Description | Published |
20130081662 | Thermoelectrical Device and Method for Manufacturing Same - A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate. | 04-04-2013 |
20140332877 | Semiconductor Device - A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line. | 11-13-2014 |
20140332881 | SEMICONDUCTOR DEVICE - A semiconductor device includes a transistor array, including first transistors and second transistors. Gate electrodes of the first transistors are disposed in first trenches in a first main surface of a semiconductor substrate, and gate electrodes of the second transistors are disposed in second trenches in the first main surface. The first and second trenches are disposed in parallel to each other. The semiconductor device further includes a first gate conductive line in contact with the gate electrodes in the first trenches, a second gate conductive line in contact with the gate electrodes in the second trenches, and a control element configured to control the potential applied to the second gate conductive line. | 11-13-2014 |