Patent application number | Description | Published |
20080308229 | ELECTRODE ASSEMBLY AND PLASMA PROCESSING CHAMBER UTILIZING THERMALLY CONDUCTIVE GASKET AND O-RINGS - The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, a thermally conductive gasket, and a plurality of o-rings, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a thermal interface. The thermally conductive gasket and the o-rings are positioned along this thermal interface with the o-rings separating the thermally conductive gasket from the showerhead passages such that the gasket is isolated from the showerhead passages. The gasket may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate. | 12-18-2008 |
20090095424 | SHOWERHEAD ELECTRODE ASSEMBLIES AND PLASMA PROCESSING CHAMBERS INCORPORATING THE SAME - The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and securing hardware, wherein the silicon-based showerhead electrode comprises a plurality of partial recesses formed in the backside of the silicon-based showerhead electrode and backside inserts positioned in the partial recesses. The thermal control plate comprises securing hardware passages configured to permit securing hardware to access the backside inserts. The securing hardware and the backside inserts are configured to maintain engagement of the thermal control plate and the silicon-based showerhead electrode and to permit disengagement of the thermal control plate and the silicon-based showerhead electrode while isolating the silicon-based electrode material of the silicon-based showerhead electrode from frictional contact with the securing hardware during disengagement. | 04-16-2009 |
20090236040 | ELECTRODE ASSEMBLY AND PLASMA PROCESSING CHAMBER UTILIZING THERMALLY CONDUCTIVE GASKET - The present invention relates generally to plasma processing and, more particularly, to plasma processing chambers and electrode assemblies used therein. According to one embodiment of the present invention, an electrode assembly is provided comprising a thermal control plate, a silicon-based showerhead electrode, and a thermally conductive gasket, wherein respective profiles of a frontside of the thermal control plate and a backside of the showerhead electrode cooperate to define a disjointed thermal interface comprising portions proximal to showerhead passages of the showerhead electrode and portions displaced from the showerhead passages. The displaced portions are recessed relative to the proximal portions and are separated from the showerhead passages by the proximal portions of the thermal interface. The gasket is positioned along the displaced portions such that the gasket is isolated from the showerhead passages and may facilitate heat transfer across the thermal interface from the showerhead electrode to the thermal control plate. | 09-24-2009 |
20120160941 | SHOWERHEAD ELECTRODES - A silicon-based showerhead electrode is provided that can include a backside, a frontside, and a plurality of showerhead passages extending from the backside of the silicon-based showerhead electrode to the frontside of the silicon-based showerhead electrode. The silicon-based showerhead electrode can comprise single crystal silicon. The silicon-based showerhead electrode may further include a plurality of partial recesses formed within the single crystal silicon along the backside of the silicon-based showerhead electrode. The plurality of partial recesses can leave a thickness of single crystal silicon between each of the partial recesses and the frontside of the silicon-based showerhead electrode. | 06-28-2012 |
Patent application number | Description | Published |
20100252200 | GROUNDED CONFINEMENT RING HAVING LARGE SURFACE AREA - A wafer processing system is provided for use with a driver and a material supply source. The driver is operable to generate a driving signal. The material supply source is operable to provide a material. The wafer processing system includes an upper confinement chamber portion, a lower confinement chamber portion, a confinement ring, and an electro-static chuck. The upper confinement chamber portion has an upper confinement chamber portion inner surface. The lower confinement chamber portion is detachably disposed in contact with the upper confinement chamber portion. The lower confinement chamber portion has a lower confinement chamber portion inner surface. The confinement ring is removably disposed in contact with the upper confinement chamber portion inner surface and the lower confinement chamber portion inner surface. The confinement ring has a confinement ring inner surface. The electro-static chuck has an electro-static chuck upper surface and is arranged to receive the driving signal. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are arranged such that the upper confinement chamber portion inner surface, the lower confinement chamber portion inner surface, the confinement ring inner surface and the electro-static chuck upper surface surround a plasma-forming space that is capable of receiving the material. The upper confinement chamber portion, the lower confinement chamber portion, the confinement ring and the electro-static chuck are operable to transform the material into a plasma when the electro-static chuck receives the driving signal. The confinement ring has a non-rectangular cross section. | 10-07-2010 |
20100253224 | MODULATED MULTI-FREQUENCY PROCESSING METHOD - A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion. The duty cycle is the ratio of a duration of the maximum amplitude portion to the sum of the duration of the maximum amplitude portion and the duration of the minimum amplitude portion. The second periodic portion additionally has a second frequency during the maximum amplitude portion. An amplitude modulation of the second periodic portion is phase locked to the first continuous periodic portion. | 10-07-2010 |
Patent application number | Description | Published |
20080237187 | METHOD AND APPARATUS FOR INDUCING DC VOLTAGE ON WAFER-FACING ELECTRODE - A method for processing a substrate is disclosed. The method includes supporting the substrate in the plasma-processing chamber configured with a first electrode and a second electrode. The method also includes coupling a passive radio frequency (RF) circuit to the second electrode, the passive RF circuit being configured to adjust one or more of an RF impedance, an RF voltage potential, and a DC bias potential on the second electrode. | 10-02-2008 |
20080241420 | METHOD AND APPARATUS FOR DC VOLTAGE CONTROL ON RF-POWERED ELECTRODE - In a plasma processing chamber, a method for processing a substrate is provided. The method includes supporting the substrate in the plasma processing chamber configured with an upper electrode (UE) and a lower electrode (LE), configuring at least one radio frequency power source to ignite plasma between the UE and the LE, and providing a conductive coupling ring, the conductive coupling ring is coupled to the LE to provide a conductive path. The method further includes providing a plasma-facing-substrate-periphery (PFSP) ring, the PFSP ring being disposed above the conductive coupling ring. The method yet further includes coupling the PFSP ring to at least one of a direct current (DC) ground through an RF filter, the DC ground through the RF filter and a variable resistor, a positive DC power source through the RF filter, and a negative DC power source through the RF filter to control plasma processing parameters. | 10-02-2008 |
20110132874 | SMALL PLASMA CHAMBER SYSTEMS AND METHODS - A plasma etch processing tool is disclosed. The plasma etch processing tool, comprising a substrate support for supporting a substrate having a substrate surface area, a processing head including a plasma microchamber having an open side that is oriented over the substrate support, the open side of the plasma microchamber having a process area that is less than the substrate surface area, a sealing structure defined between the substrate support and the processing head and a power supply connected to the plasma microchamber and the substrate support. A method for performing a plasma etch is also disclosed. | 06-09-2011 |
20130126476 | DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES - A system and method of plasma processing includes a plasma chamber including a substrate support and an upper electrode opposite the substrate support, the upper electrode having a plurality of concentric temperature control zones and a controller coupled to the plasma chamber. | 05-23-2013 |
20130127124 | PERIPHERAL RF FEED AND SYMMETRIC RF RETURN WITH RF STRAP INPUT - Systems and methods are presented for a peripheral RF feed and symmetric RF return for symmetric RF delivery. According to one embodiment, a chuck assembly for plasma processing is provided. The chuck assembly includes an electrostatic chuck having a substrate support surface on a first side, a facility plate coupled to the electrostatic chuck on a second side that is opposite the substrate support surface, a peripheral RF feed configured to deliver RF power, the peripheral RF feed having a first portion contacting a periphery of the facility plate and an RF strap coupling the peripheral RF feed to an RF source. | 05-23-2013 |
20130133834 | Plasma Processing Chamber With Flexible Symmetric RF Return Strap - Chambers for processing semiconductor wafers are provided. One such chamber includes an electrostatic chuck having a surface for supporting a substrate. A ground assembly is provided that surrounds a periphery of the electrostatic chuck. The ground assembly includes a first annular part and a second annular part and a space between the first annular part and the second annular part. A conductive strap having flexibility is provided. The conductive strap is annular and has a curved cross-sectional shape with a first end and a second end. The conductive strap is disposed in the space such that the first is electrically connected to the first annular part and the second end is electrically connected to the second annular part. The curved cross-sectional shape has an opening that faces away from the electrostatic chuck when the annular conductive strap is in the space. | 05-30-2013 |
20140151333 | Small Plasma Chamber Systems and Methods - A plasma deposition chamber is disclosed. A substrate support for supporting a surface to be processed is in the chamber. A processing head including an array of plasma microchambers is also in the chamber. Each of the plasma microchambers includes an open side disposed over at least a first portion of the surface to be processed. The open side has an area less than an entire area of the surface to be processed. A process gas source is coupled to the chamber to provide a process gas the array of plasma microchambers. A radio frequency power supply is connected to at least one electrode of the processing head. The array of plasma microchambers is configured to generate a plasma using the process gas to deposit a layer over the at least first portion of the surface to be processed. A method for performing a plasma deposition is also disclosed. | 06-05-2014 |
Patent application number | Description | Published |
20130134138 | GAS FEED INSERT IN A PLASMA PROCESSING CHAMBER AND METHODS THEREFOR - A gas feed insert configured to be disposed in a passage through an electrode assembly comprising a first insert end having therein a first bore aligned parallel with a linear axis of the gas feed insert. The gas feed insert further includes a second insert end opposite the first insert end, the second insert end having therein a second bore aligned parallel with the linear axis of the gas feed insert and a bore-to-bore communication channel in gas flow communication with the first bore and the second bore. The bore-to-bore communication channel is formed in an outer surface of the gas feed insert so as to prevent a line-of-sight when a gas flows from the first insert end through the bore-to-bore communication to the second insert end. | 05-30-2013 |
20130134876 | MOVABLE GROUNDING ARRANGEMENTS IN A PLASMA PROCESSING CHAMBER AND METHODS THEREFOR - A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component. | 05-30-2013 |
20130160948 | Plasma Processing Devices With Corrosion Resistant Components - In one embodiment, a plasma processing device may include a plasma processing chamber, a plasma region, an energy source, and a corrosion resistant component. The plasma processing chamber can be maintained at a vacuum pressure and can confine a plasma processing gas. The energy source can transmit energy into the plasma processing chamber and transform at least a portion of the plasma processing gas into plasma within the plasma region. The corrosion resistant component can be located within the plasma processing chamber. The corrosion resistant component can be exposed to the plasma processing gas and is not coincident with the plasma region. The corrosion resistant component may include an inner layer of stainless steel that is coated with an outer layer of Tantalum (Ta). | 06-27-2013 |
20140263177 | System and Method for Heating Plasma Exposed Surfaces - A substrate support apparatus for a plasma processing system includes a layer of dielectric material having a top surface and a bottom surface. The top surface is defined to support a substrate in exposure to a plasma. The substrate support apparatus also includes a number of optical fibers each having a first end and a second end. The first end of each optical fiber is defined to receive photons from a photon source. The second end of each optical fiber is oriented to project photons received from the photon source onto the bottom surface of the layer of dielectric material. | 09-18-2014 |
20150060404 | System, Method and Apparatus for Coordinating Pressure Pulses and RF Modulation in a Small Volume Confined Process Reactor - A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of controlling an outlet flow through the at least one outlet port between a first flow rate and a second flow rate, wherein the conductance control structure controls the outlet flow rate and an at least one RF source is modulated and at least one process gas flow rate is modulated corresponding to a selected processing state set by the controller during a plasma process. | 03-05-2015 |
20150064920 | System, Method and Apparatus for Generating Pressure Pulses in Small Volume Confined Process Reactor - A plasma processing system and method includes a processing chamber, and a plasma processing volume included therein. The plasma processing volume having a volume less than the processing chamber. The plasma processing volume being defined by a top electrode, a substrate support surface opposing the surface of the top electrode and a plasma confinement structure including at least one outlet port. A conductance control structure is movably disposed proximate to the at least one outlet port and capable of restricting an outlet flow through the at least one outlet port to a first flow rate and capable of increasing the outlet flow through the at least one outlet port to a second flow rate, wherein the conductance control structure restricts the outlet flow rate moves between the first flow rate and the second flow rate corresponding to a selected processing state set by the controller during a plasma process. | 03-05-2015 |
20150083582 | ION TO NEUTRAL CONTROL FOR WAFER PROCESSING WITH DUAL PLASMA SOURCE REACTOR - The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material. | 03-26-2015 |