Patent application number | Description | Published |
20090004835 | Method for producing semi-conducting material wafers by moulding and directional crystallization - Wafers of semi-conducting material are formed by moulding and directional crystallization from a liquid mass of this material. A seed, situated at the bottom of the crucible, presents an orientation along non-dense crystallographic planes. The mould is filled with the molten semi-conducting material by means of a piston or by creation of a pressure difference in the device. The mould is preferably coated with a non-wettable anti-adhesive deposit. | 01-01-2009 |
20090013925 | Device for producing a block of crystalline material with modulation of the thermal conductivity - The device for producing a block of crystalline material from a bath of molten material comprises a crucible having a bottom and heat extraction means arranged under the crucible. It also comprises means for modulating the thermal conductivity fitted between the bottom of the crucible and the heat extraction means. The means for modulating the thermal conductivity comprise a plurality of plates made from thermally conducting material of low emissivity, parallel to the bottom of the crucible, and means for moving said plates closer to and away from one another. | 01-15-2009 |
20100003183 | Method of purifying metallurgical silicon by directional solidification - The method enables metallurgical silicon to be purified by directional solidification to obtain solar or photovoltaic grade silicone. A crystallization step uses at least one silicon seed, preference of solar grade or even microelectronic grade, having for example a purity substantially equal to or greater than a predetermined purity of the solar-grade silicon. The silicon seed which covers the bottom of the crucible can come from a previous crystallization or be formed by a silicon wafer. The use of a single-crystal or textured multi-crystal seed enables crystallographic orientation of the solar-grade silicon. An intermediate layer of solid metallurgical silicon can be arranged on the silicon seed and a metallurgical silicon feedstock is arranged on the intermediate layer. | 01-07-2010 |
20100171232 | METHOD FOR SEMICONDUCTOR SOLIDIFICATION WITH THE ADDITION OF DOPED SEMICONDUCTOR CHARGES DURING CRYSTALLISATION - A method for semiconductor solidification which includes steps for:
| 07-08-2010 |
20110212630 | METHOD FOR PREPARING A SELF-SUPPORTING CRYSTALLIZED SILICON THIN FILM - The invention relates to a method for preparing a self-supporting crystallized silicon thin film having a grain size of more than 1 mm. The invention also relates to the use of said method for preparing self-supporting silicon bands and to the bands thus obtained. | 09-01-2011 |
20110229711 | METHOD OF ASSEMBLING CARBON PARTS BY REFRACTORY BRAZING - The present invention relates to a method of assembling carbon parts using a braze based on silicon carbide. The invention also relates to the parts assembled using such a method. | 09-22-2011 |
20120040139 | MATERIAL HAVING A MULTILAYER ARCHITECTURE AND INTENDED FOR BEING CONTACTED WITH LIQUID SILICON - The present invention relates to novel materials intended for being contacted with liquid silicon and having a multilayer architecture, the intermediate layer of which is formed by a silicon carbide matrix containing at least one carbon nodule. The invention also relates to the method for preparing said materials. | 02-16-2012 |
20130239370 | Heat Exchanger for a System for Solidification and/or Crystallization of a Semiconductor Material - Heat exchanger ( | 09-19-2013 |