Demuynck
David A. Demuynck, Underhill, VT US
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20120086101 | INTEGRATED CIRCUIT AND INTERCONNECT, AND METHOD OF FABRICATING SAME - The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC includes at least one trench within a dielectric layer disposed on a substrate. The trench is conformally coated with a liner and seed layer, and includes an interconnect within. The interconnect includes a hard mask on the sidewalls of the interconnect. | 04-12-2012 |
20130154033 | MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES - Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes layering metal and insulator materials on a sacrificial material formed on a substrate. The method further includes masking the layered metal and insulator materials. The method further includes forming an opening in the masking which overlaps with the sacrificial material. The method further includes etching the layered metal and insulator materials in a single etching process to form the beam structure, such that edges of the layered metal and insulator material are aligned. The method further includes forming a cavity about the beam structure through a venting. | 06-20-2013 |
20130156993 | MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) STRUCTURES AND DESIGN STRUCTURES - Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes layering metal and insulator materials on a sacrificial material formed on a substrate. The method further includes masking the layered metal and insulator materials. The method further includes forming an opening in the masking which overlaps with the sacrificial material. The method further includes etching the layered metal and insulator materials in a single etching process to form the beam structure, such that edges of the layered metal and insulator material are aligned. The method further includes forming a cavity about the beam structure through a venting. | 06-20-2013 |
20140354392 | METAL WIRES OF A STACKED INDUCTOR - A method including forming a first metal wire in a first dielectric layer, the first metal wire including a first vertical side opposite from a second vertical side; and forming a second metal wire in a second dielectric layer above the first dielectric layer, the second metal wire including a third vertical side opposite from a fourth vertical side, where the first vertical side is laterally offset from the third vertical side by a first predetermined distance, and the second vertical side is laterally offset from the fourth vertical side by a second predetermined distance, where the first metal wire and the second metal wire are in direct contact with one another. | 12-04-2014 |
Isabelle Demuynck, Orleans FR
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20080312314 | Alpha crystalline form of strontium ranelate - Alpha crystalline form of strontium ranelate of formula (I): | 12-18-2008 |
Luc Demuynck, Orleans FR
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20140241989 | NOVEL IMAGING AGENTS, PROCESS FOR THE PREPARATION THEREOF AND PHARMACEUTICAL COMPOSITIONS CONTAINING SAME - Compounds of formula (I) in which: >R is a linear or branched (C | 08-28-2014 |
Maartkin Demuynck, Nevele BE
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20100163553 | MICROWAVE STEAM COOKING CONTAINER SYSTEM - A microwave steam cooking container system for cooking foodstuff, comprising a water reservoir, a food container comprising a plurality of apertures on a bottom thereof, an outer wall portion and an inner wall portion, and a microwave shielding material encapsulated between said inner and outer wall portions, a cover comprising an inner wall portion and an outer wall portion, and a microwave shielding material encapsulated between said cover inner and said cover outer wall portions, wherein said food container is stacked and removably placed within said water reservoir, wherein in the assembled position the foodstuff to be cooked is shielded from cooking by direct exposure to microwave energy. | 07-01-2010 |
Marc Demuynck, Wondelgem BE
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20110212187 | ANTIMICROBIAL COMPOSITION - The invention relates to new antimicrobial compositions comprising a combination of—at least one organic and/or inorganic peroxide, —at least one silver source, and —at least one nitrogen containing compound which is a non glucogenic compatible solute, selected from taurine, choline and choline derivatives, trimethylamine-oxide (TMAO), ectoine and hydroxyectoine, the N-methylated aminoacids glycine betaine, dimethylglycine, sarcosine, carnitine, N-methyl alanine, trimethylamino-butyric acid, butyrobetaine and proline betaine, and the poly amino hydrocarbon compounds putrescine, cadaverine, spermine and spermidine. | 09-01-2011 |
Marc Demuynck, Woldegem BE
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20130130902 | STABILIZED BIO-AVAILABLE SOLUBLE SILICATE SOLUTION - The present invention relates to dissolved silicate compositions in which the dissolved silicate is stabilized by at least two selected osmolytes and is therefore bioavailable. The composition and its dilutions are stable over a long period of time and are used in a wide field of applications for the benefit of living organisms such as plants, animals and humans. | 05-23-2013 |
Randy Demuynck, Wake Forest, NC US
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20130193850 | REMOTE THERMAL COMPENSATION ASSEMBLY - A thermal compensating circuit board (TCB) assembly comprising a substrate, the substrate comprising at least one thermal compensating circuit deposited thereon, the substrate devoid of a solid state emitter, and at least one electrical connector coupled to the at least one thermal compensating circuit, the connector configured to couple with a solid state emitter assembly and/or power supply. Lighting devices comprising the TCB assembly are provided. | 08-01-2013 |
Steven Demuynck, Aarschot BE
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20100207177 | METHOD FOR PRODUCING A COPPER CONTACT - A method for producing a contact through the pre-metal dielectric (PMD) layer of an integrated circuit, between the front end of line and the back end of line, and the device produced thereby are disclosed. The PMD layer includes oxygen. In one aspect, the method includes producing a hole in the PMD, depositing a conductive barrier layer at the bottom of the hole, depositing a CuMn alloy on the bottom and side walls of the hole, filling the remaining portion of the hole with Cu. The method further includes performing an anneal process to form a barrier on the side walls of the hole, wherein the barrier has an oxide including Mn. The method further includes performing a CMP process. | 08-19-2010 |