Patent application number | Description | Published |
20080198881 | OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS - Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation. | 08-21-2008 |
20110032965 | OPTIMIZATION OF LASER BAR ORIENTATION FOR NONPOLAR AND SEMIPOLAR (Ga,Al,In,B)N DIODE LASERS - Optical gain of a nonpolar or semipolar Group-III nitride diode laser is controlled by orienting an axis of light propagation in relation to an optical polarization direction or crystallographic orientation of the diode laser. The axis of light propagation is substantially perpendicular to the mirror facets of the diode laser, and the optical polarization direction is determined by the crystallographic orientation of the diode laser. To maximize optical gain, the axis of light propagation is oriented substantially perpendicular to the optical polarization direction or crystallographic orientation. | 02-10-2011 |
20120256158 | Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES - A method for fabricating Al | 10-11-2012 |
20120273796 | HIGH INDIUM UPTAKE AND HIGH POLARIZATION RATIO FOR GROUP-III NITRIDE OPTOELECTRONIC DEVICES FABRICATED ON A SEMIPOLAR (20-2-1) PLANE OF A GALLIUM NITRIDE SUBSTRATE - A Group-III nitride optoelectronic device fabricated on a semipolar (20-2-1) plane of a Gallium Nitride (GaN) substrate is characterized by a high Indium uptake and a high polarization ratio. | 11-01-2012 |
20120313076 | LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES - A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device. | 12-13-2012 |
20120313077 | HIGH EMISSION POWER AND LOW EFFICIENCY DROOP SEMIPOLAR BLUE LIGHT EMITTING DIODES - High emission power and low efficiency droop semipolar blue light emitting diodes (LEDs). | 12-13-2012 |
20130214284 | METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES - A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates. | 08-22-2013 |
Patent application number | Description | Published |
20090309110 | SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE FOR MULTI-COLORED DEVICES - A multicolored LED device made of a semipolar material having different indium containing regions provided on different spatial features of GaN material. Other materials such as non-polar materials can also be used. | 12-17-2009 |
20090309127 | SELECTIVE AREA EPITAXY GROWTH METHOD AND STRUCTURE - A gallium containing crystalline material. The material comprises a bulk semi-polar gallium indium containing crystalline material having a thickness of about 20 nanometers to about 1000 nanometers. The material includes a spatial width dimension of no greater than about 10 microns characterizing the thickness of the bulk semi-polar gallium indium containing crystalline material. The material includes a photoluminescent characteristic of the crystalline material having a first wavelength, which is at least five nanometers greater than a second wavelength, which is derived from an indium gallium containing crystalline material grown on a growth region of greater than about 15 microns. | 12-17-2009 |
20100001300 | COPACKING CONFIGURATIONS FOR NONPOLAR GaN AND/OR SEMIPOLAR GaN LEDs - A packaged light emitting device. The device has a substrate member comprising a surface region. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region according to a specific embodiment. At least a first of the light emitting diode device is fabricated on a semipolar GaN containing substrate and at least a second of the light emitting diode devices is fabricated on a nonpolar GaN containing substrate. In a preferred embodiment, the two or more light emitting diode devices emits substantially polarized emission. Of course, there can be other variations, modifications, and alternatives. | 01-07-2010 |
20100006873 | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN - A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission. | 01-14-2010 |
20100295088 | TEXTURED-SURFACE LIGHT EMITTING DIODE AND METHOD OF MANUFACTURE - A high efficiency textured-surface light emitting diode comprises a flip-chipped stack of Al | 11-25-2010 |
20100316075 | Optical Device Structure Using GaN Substrates for Laser Applications - An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −2 degrees to about 2 degrees towards (000-1) and less than about 0.5 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. A first cleaved c-face facet is provided on one end of the laser stripe region, and a second cleaved c-face facet is provided on the other end of the laser stripe region. | 12-16-2010 |
20110180781 | Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN - A packaged light emitting device. The device has a substrate member comprising a surface region. The device also has two or more light emitting diode devices overlying the surface region. Each of the light emitting diode device is fabricated on a semipolar or nonpolar GaN containing substrate. The two or more light emitting diode devices are fabricated on the semipolar or nonpolar GaN containing substrate emits substantially polarized emission. | 07-28-2011 |
20120178198 | Self-Aligned Multi-Dielectric-Layer Lift Off Process for Laser Diode Stripes - A method for forming a laser diode structure. The method includes providing a laser diode material having a surface region. A multilayer dielectric mask structure comprising alternating first and second dielectric layers is formed overlying the surface region. The method forms a laser diode structure using the multilayer dielectric mask structure as a mask. The method selectively removes a portion of the first dielectric layer to form one or more undercut regions between the second dielectric layers. A passivation layer overlies the multilayer dielectric mask structure and the undercut region remained intact. The dielectric mask structure is selectively removed, exposing a top surface region of the laser diode structure. A contact structure is formed overlying at least the exposed top surface region. | 07-12-2012 |
20140295595 | OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS - An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region. | 10-02-2014 |
Patent application number | Description | Published |
20130299776 | HIGH OUTPUT POWER, HIGH EFFICIENCY BLUE LIGHT-EMITTING DIODES - A III-nitride based semipolar LED with a light output power of at least 100 milliwatts (mW), or with an External Quantum Efficiency (EQE) of at least 50%, for a current density of at least 100 Amps per centimeter square (A/cm | 11-14-2013 |
20130299777 | LIGHT-EMITTING DIODES WITH LOW TEMPERATURE DEPENDENCE - A III-nitride based LED with an External Quantum Efficiency (EQE) droop of less than 10% when a junction temperature of the LED is increased from 20 ° C. to at least 100 ° C. at a current density of the LED of at least 20 Amps per centimeter square. | 11-14-2013 |
20140023102 | STRUCTURE AND METHOD FOR THE FABRICATION OF A GALLIUM NITRIDE VERTICAL CAVITY SURFACE EMITTING LASER - A III-Nitride based Vertical Cavity Surface Emitting Laser (VCSEL), wherein a cavity length of the VCSEL is controlled by etching. | 01-23-2014 |
20140151634 | LOW DROOP LIGHT EMITTING DIODE STRUCTURE ON GALLIUM NITRIDE SEMIPOLAR SUBSTRATES - A light emitting diode structure of (Al,Ga,In)N thin films grown on a gallium nitride (GaN) semipolar substrate by metal organic chemical vapor deposition (MOCVD) that exhibits reduced droop. The device structure includes a quantum well (QW) active region of two or more periods, n-type superlattice layers (n-SLs) located below the QW active region, and p-type superlattice layers (p-SLs) above the QW active region. The present invention also encompasses a method of fabricating such a device. | 06-05-2014 |
20140167059 | PEC ETCHING OF (20-2-1) SEMIPOLAR GALLIUM NITRIDE FOR EXTERNAL EFFICIENCY ENHANCEMENT IN LIGHT EMITTING DIODE APPLICATIONS - A method of performing a photoelectrochemical (PEC) etch on an exposed surface of a semipolar {20-2-1} III-nitride semiconductor, for improving light extraction from and for enhancing external efficiency of one or more active layers formed on or above the semipolar {20-2-1} III-nitride semiconductor. | 06-19-2014 |
20150048381 | METHOD FOR THE REUSE OF GALLIUM NITRIDE EPITAXIAL SUBSTRATES - A method for the reuse of gallium nitride (GaN) epitaxial substrates uses band-gap-selective photoelectrochemical (PEC) etching to remove one or more epitaxial layers from bulk or free-standing GaN substrates without damaging the substrate, allowing the substrate to be reused for further growth of additional epitaxial layers. The method facilitates a significant cost reduction in device production by permitting the reuse of expensive bulk or free-standing GaN substrates. | 02-19-2015 |