Patent application number | Description | Published |
20120042819 | STERN STRUCTURE OF SHIP - A stern structure of a ship includes a plurality of propellers, a plurality of propeller shafts and a stern structural body. A plurality of propeller shaft tubes is provided correspondingly to the plurality of propellers, and the plurality of propeller shafts connected to the plurality of propellers is inserted into the plurality of propeller shaft tubes. The stern structural body extends backwardly from the stern body, spreads externally with respect to a ship body center line C, and contains portions of the plurality of propeller shafts extending backwardly from the stern body. An inner side of the stern structural body is equivalent to an interior portion of a ship body. The stern structural body supports the plurality of propeller shaft tubes in the interior portion of the ship body. | 02-23-2012 |
20120071046 | PROPULSION DEVICE OF SHIP - A propulsion device of a ship is provided with a port side propeller, a starboard side propeller, a port side propeller axis and a starboard side propeller axis. The port side propeller axis extends backwardly from the hull stern and is connected with the port side propeller. The starboard side propeller axis extends backwardly from the hull stern and is connected with the starboard side propeller. When the propeller diameters of the port side propeller and the starboard side propeller are Dp, the distance between a propeller wing tip of the port side propeller and a propeller wing tip of the starboard side propeller is equal to or more than 0 and equal to or smaller than 0.5 Dp. | 03-22-2012 |
20130186318 | VESSEL - In a vessel, a first hull bottom ( | 07-25-2013 |
20130341711 | SEMICONDUCTOR DEVICE - A technique for improving the characteristics of a semiconductor device (UMOSFET) is provided. In the UMOSFET in order to grow an epitaxial growth film on a trench side wall with an even film thickness, a channel is arranged in an optimum direction as a growth surface. For example, a trench is formed on an SiC substrate having a {0001} surface 4° off in a <11-20> direction as a main surface so that a channel surface becomes a {1-100} surface. With this configuration, an epitaxial growth with the even thickness can be conducted on the side wall from which the {1-100} surface of the trench is exposed. As a result, the unevenness of a channel resistance, and the insulation failure of a gate insulating film do not occur, and the yield is improved. | 12-26-2013 |
20140239392 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A technique for improving characteristics of a semiconductor device (DMOSFET) is provided. A semiconductor device is configured so as to include: an n-type source layer ( | 08-28-2014 |
20150239540 | SHIP OF CONTRAROTATING PROPELLER PROPULSION TYPE - A ship includes a main propeller; a pod propulsion unit; and a rudder plate. The main propeller, the pod propulsion unit and the rudder plate are arranged on a hull centerline in this order. The pod propulsion unit includes a pod propeller; and a strut. The main propeller and the pod propeller configure a contrarotating propeller. When rudder angles of the pod propulsion unit and the rudder plate are zero, at least a part of a front end of the rudder plate is in front of a rear end of the casing. | 08-27-2015 |
20150250074 | COOLING STRUCTURE FOR HEATING ELEMENT AND POWER CONVERTER - A cooling structure is provided. The cooling structure includes cooling surfaces on two confronting side surfaces; a plurality of double-sided-cooling power module, the heat receiving block pinching the heating elements arranged in a vertical direction on the confronting side surfaces, first and second cooling devices, each including the heat radiating fins, disposed above the heating elements, extending in a horizontal direction, and a pressure contacting part configured to contact the heating elements and the receiving block with a pressure force. The heat radiation fins are blown from a side of the electric terminal. | 09-03-2015 |
20160007507 | Power Conversion Device - A power conversion device capable of reducing a temperature variation between a plurality of semiconductor modules is provided. The power conversion device comprises condensers | 01-07-2016 |