Patent application number | Description | Published |
20120308739 | METHODS FOR DEPOSITION OF ALKALINE EARTH METAL FLUORIDE FILMS - Disclosed are thermal and/or plasma-enhanced CVD, ALD, and/or pulse CVD processes to deposit alkaline earth metal fluoride-based films, such as MgF | 12-06-2012 |
20120321817 | BIS-KETOIMINATE COPPER PRECURSORS FOR DEPOSITION OF COPPER-CONTAINING FILMS - Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD). | 12-20-2012 |
20130011580 | CYCLOPENTADIENYL TRANSITION METAL PRECURSORS FOR DEPOSITION OF TRANSITION METAL-CONTAINING FILMS - Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film. | 01-10-2013 |
20130059077 | Method of Atomic Layer Deposition Using Metal Precursors - Methods for deposition of metal films consisting essentially of Co, Mn, Ru or a lanthanide on surfaces using metal coordination complexes are provided. The precursors used in the process include a 2-methylimine pyrrolyl ligand and/or N,N′-diisopropylformamidinato ligand. The precursors may also contain cyclopentadienyl, pentamethylcyclopentadienyl or pyrrolyl groups. | 03-07-2013 |
20130337192 | BIS-PYRROLES-2-ALDIMINATE MANGANESE PRECURSORS FOR DEPOSITION OF MANGANESE CONTAINING FILMS - Disclosed are manganese-containing precursors having the formula (I): wherein each R | 12-19-2013 |
20140106071 | GROUP 5 CYCLOPENTADIENYL TRANSITION METAL-CONTAINING PRECURSORS FOR DEPOSITION OF GROUP 5 TRANSITION METAL-COINTAINING FILMS - Transition metal-containing precursors are disclosed. Also disclosed are methods of synthesizing and using the disclosed precursors to deposit transition metal-containing films on one or more substrates via a vapor deposition process. | 04-17-2014 |
20140179105 | HETEROLEPTIC (ALLYL)(PYRROLES-2-ALDIMINATE) METAL-CONTAINING PRECURSORS, THEIR SYNTHESIS AND VAPOR DEPOSITION THEREOF TO DEPOSIT METAL-CONTAINING FILMS - Disclosed are metal-containing precursors having the formula Compound (I) wherein: —M is a metal selected from Ni, Co, Mn, Pd; and —each of R- | 06-26-2014 |
20140235054 | TUNGSTEN DIAZABUTADIENE PRECURSORS, THEIR SYNTHESIS, AND THEIR USE FOR TUNGSTEN CONTAINING FILM DEPOSITIONS - Disclosed are tungsten diazabutadiene molecules, their method of manufacture, and their use in the deposition of tungsten-containing films. The disclosed molecules have the formula W(DAD) | 08-21-2014 |
20140242298 | NICKEL BIS DIAZABUTADIENE PRECURSORS, THEIR SYNTHESIS, AND THEIR USE FOR NICKEL CONTAINING FILMS DEPOSITIONS - Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formula Ni(R-DAD) | 08-28-2014 |
20150056384 | METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM USING ARENE DIAZADIENE RUTHENIUM(0) PRECURSORS - The invention concerns the use of ruthenium containing precursors having the formula (1) wherein R1, R2 . . . R10 are independently selected from H, C1-C4 linear, branched, or cyclic alkyl group, C1-C4 linear, branched, or cyclic alkylsilyl group (mono, bis, or trisalkyl), C1-C4 linear, branched, or cyclic alkylamino group, or a C1-C4 linear, branched, or cyclic fluoroalkyl group (totally fluorinated or not); for the deposition of a Ru containing film on a substrate. | 02-26-2015 |
20150072085 | TITANIUM BIS DIAZADIENYL PRECURSOR FOR VAPOR DEPOSITION OF TITANIUM OXIDE FILMS - Disclosed are methods of using the Ti(iPrDAD) | 03-12-2015 |