Patent application number | Description | Published |
20110027944 | METHOD OF FORMING ELECTRICAL CONNECTIONS - A method of forming electrical connections to a semiconductor wafer. A semiconductor wafer comprising an insulation layer is provided. The insulation layer has a surface. A patterned mask layer is formed over the surface of the insulation layer. The patterned mask layer exposes portions of the surface of the insulation layer through a plurality of holes. The portions of the plurality of holes are filled with a metal material comprising copper to form elongated columns of the metal material. The elongated columns of the metal material have a sidewall surface. The patterned mask layer is removed to expose the sidewall surface of the elongated columns of the metal material. A protection layer is formed on the exposed sidewall surface of the elongated columns of the metal material. | 02-03-2011 |
20110101521 | POST PASSIVATION INTERCONNECT WITH OXIDATION PREVENTION LAYER - A copper interconnect line formed on a passivation layer is protected by a copper-containing material layer including a group III element, a group IV element, a group V element or combinations thereof. | 05-05-2011 |
20110101523 | PILLAR BUMP WITH BARRIER LAYER - A copper pillar bump has a surface covered with by a barrier layer formed of a copper-containing material layer including a group III element, a group IV element, a group V element or combinations thereof. The barrier layer depresses the copper diffusion and reaction with solder to reduce the thickness of intermetallic compound between the pillar pump and solder. | 05-05-2011 |
20110254151 | METHOD FOR FABRICATING BUMP STRUCTURE WITHOUT UBM UNDERCUT - A method for fabricating bump structure without UBM undercut uses an electroless Cu plating process to selectively form a Cu UBM layer on a Ti UBM layer within an opening of a photoresist layer. After stripping the photoresist layer, there is no need to perform a wet etching process on the Cu UBM layer, and thereby the UBM structure has a non-undercut profile. | 10-20-2011 |
20110260317 | CU PILLAR BUMP WITH ELECTROLYTIC METAL SIDEWALL PROTECTION - A copper pillar bump has a sidewall protection layer formed of an electrolytic metal layer. The electrolytic metal layer is an electrolytic nickel layer, an electrolytic gold layer, and electrolytic copper layer, or an electrolytic silver layer. | 10-27-2011 |
20110285011 | CU PILLAR BUMP WITH L-SHAPED NON-METAL SIDEWALL PROTECTION STRUCTURE - An L-shaped sidewall protection process is used for Cu pillar bump technology. The L-shaped sidewall protection structure is formed of at least one of non-metal material layers, for example a dielectric material layer, a polymer material layer or combinations thereof. | 11-24-2011 |
20120007230 | CONDUCTIVE BUMP FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF MANUFACTURE - An embodiment of the disclosure includes a conductive bump on a semiconductor die. A substrate is provided. A bond pad is over the substrate. An under bump metallurgy (UBM) layer is over the bond pad. A copper pillar is over the UBM layer. The copper pillar has a top surface with a first width and sidewalls with a concave shape. A nickel layer having a top surface and a bottom surface is over the top surface of the copper pillar. The bottom surface of the nickel layer has a second width. A ratio of the second width to the first width is between about 0.93 to about 1.07. A solder material is over the top surface of the cap layer. | 01-12-2012 |
20120178251 | METHOD OF FORMING METAL PILLAR - The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar. | 07-12-2012 |
20130295762 | CU PILLAR BUMP WITH ELECTROLYTIC METAL SIDEWALL PROTECTION - A method of forming a bump structure includes providing a semiconductor substrate and forming an under-bump-metallurgy (UBM) layer on the semiconductor substrate. The method further includes forming a mask layer on the UBM layer, wherein the mask layer has an opening exposing a portion of the UBM layer. The method further includes forming a copper layer in the opening of the mask layer and removing a portion of the mask layer to form a space between the copper layer and the mask layer. The method further includes performing an electrolytic process to fill the space with a metal layer and removing the mask layer. | 11-07-2013 |