Patent application number | Description | Published |
20120131521 | LAYOUT PATTERN - A layout pattern is disclosed. The layout pattern includes: a polygon pattern having at least one segment; and at least one notch formed in the polygon pattern, wherein at least one side of the notch is less than the length of the segment. | 05-24-2012 |
20120319287 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING SEMICONDUCTOR LAYOUT - A method for fabricating a semiconductor layout includes providing a first layout having a plurality of line patterns and a second layout having a plurality of connection patterns, defining at least a first to-be-split pattern overlapping with the connection pattern among the line patterns, splitting the first to-be-split pattern at where the first to-be-split pattern overlapping with the connection pattern, decomposing the first layout to form a third layout and a fourth layout, and outputting the third layout and the further layout to a first mask and a second mask respectively. | 12-20-2012 |
20130344043 | METHOD FOR ENHANCING PPARy EXPRESSION - The present invention provides a method for enhancing PPARĪ³ expression, comprising administering a subject in need thereof an effective amount of | 12-26-2013 |
20140045105 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING SEMICONDUCTOR LAYOUT - A method for fabricating a semiconductor layout includes providing a first layout having a plurality of line patterns and a second layout having a plurality of connection patterns, defining at least a first to-be-split pattern overlapping with the connection pattern among the line patterns, splitting the first to-be-split pattern at where the first to-be-split pattern overlapping with the connection pattern, decomposing the first layout to form a third layout and a fourth layout, and outputting the third layout and the further layout to a first mask and a second mask respectively. | 02-13-2014 |
20140093814 | METHOD FOR FORMING PHOTOMASKS - A method for forming photomasks includes the following steps. A first photomask including a first target pattern and a first unprintable dummy pattern is provided. A second photomask including a second target pattern and a second printable dummy pattern are provided, wherein at least part of the second printable dummy pattern overlapping the first unprintable dummy pattern exposure limit, such that the second printable dummy pattern can not be printed in a wafer. | 04-03-2014 |
20140220482 | METHOD FOR FORMING PATTERNS - A method for forming patterns includes the following steps. A first layout including a first target pattern and a first unprintable dummy pattern is provided. A second layout including a second target pattern and a second printable dummy pattern are provided, wherein at least part of the second printable dummy pattern overlaps the first unprintable dummy pattern exposure limit, such that the second printable dummy pattern cannot be formed in a wafer. | 08-07-2014 |
20140282295 | Method for Forming Photo-masks and OPC Method - The present invention provides a method for forming at least a photo mask. A first photo-mask pattern relating to a first structure is provides. A second photo-mask pattern relating to a second structure is provides. A third photo-mask pattern relating to a third structure is provides. The first structure, the second structure and the third structure are disposed in a semiconductor structure in sequence. An optical proximity process including a comparison step is provided, wherein the comparison step includes comparing the first photo-mask pattern and the third photo-mask pattern. Last, the first photo-mask pattern is import to form a first mask, the second photo-mask pattern is import to form a second mask, and the third photo-mask pattern is import to form a third mask. The present invention further provides an OPC method. | 09-18-2014 |
20140286926 | METHOD FOR TREATMENT OR PREVENTION OF ALLERGIC DISEASES - The present invention provides a method for reducing an allergic response and treating or preventing an allergic disease, comprising administering a subject in need thereof a therapeutically effective amount of the active ingredient for the treatment or the prevention of allergic diseases, wherein the active ingredient is glyceraldehyde-3-phosphate Dehydrogenase (G3PDH) or the functional variant or fragment thereof. The G3PDH can be isolated from | 09-25-2014 |
20150072272 | Method For Forming Photo-Mask And OPC Method - A method for forming a photo-mask is provided. A first photo-mask pattern relating to a first line, an original second photo-mask pattern relating to a first via plug, and a third photo-mask pattern relating to a second line are provided. A first optical proximity correction (OPC) process is performed. A second OPC process is performed, comprising enlarging a width of the second photo-mask pattern along the first direction to form a revised second photo-resist pattern. A contour simulation process is performed to make sure the revised second photo-mask pattern is larger or equal to the original second-mask pattern. The first photo-mask pattern, the revised second photo-mask pattern, and the third photo-mask pattern are output. The present invention further provides an OPC method. | 03-12-2015 |