Patent application number | Description | Published |
20080207089 | METHODS AND SYSTEMS FOR MONITORING A PARAMETER OF A MEASUREMENT DEVICE DURING POLISHING, DAMAGE TO A SPECIMEN DURING POLISHING, OR A CHARACTERISTIC OF A POLISHING PAD OR TOOL - Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals. | 08-28-2008 |
20090015821 | SCATTEROMETRY TARGET AND METHOD - Embodiments of the invention include a SCOL targeting groups configured to increase target to target separation and thereby increase target utility to simultaneous exposures to multiple illumination dots and associated inspection methodologies. The embodiments of the invention further relate to apparatus for projection simultaneous illumination dots onto different targets of the same targeting group on a wafer to conduct multiple simultaneous target inspections. Embodiments of the invention further relate to methods used to inspect SCOL targets using simultaneous illumination dots directed onto different targets of the same targeting group to conduct multiple simultaneous target inspections. | 01-15-2009 |
20100091284 | APPARATUS AND METHODS FOR DETECTING OVERLAY ERRORS USING SCATTEROMETRY - Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a −1 | 04-15-2010 |
20100235114 | SYSTEMS AND METHODS FOR DETERMINING ONE OR MORE CHARACTERISTICS OF A SPECIMEN USING RADIATION IN THE TERAHERTZ RANGE - Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output. | 09-16-2010 |
20100279213 | METHODS AND SYSTEMS FOR CONTROLLING VARIATION IN DIMENSIONS OF PATTERNED FEATURES ACROSS A WAFER - Methods and systems for controlling variation in dimensions of patterned features across a wafer are provided. One method includes measuring a characteristic of a latent image formed in a resist at more than one location across a wafer during a lithography process. The method also includes altering a parameter of the lithography process in response to the characteristic to reduce variation in dimensions of patterned features formed across the wafer by the lithography process. Altering the parameter compensates for non-time varying spatial variation in a temperature to which the wafer is exposed during a post exposure bake step of the lithography process and an additional variation in the post exposure bake step. | 11-04-2010 |
20110313558 | METHODS AND SYSTEMS FOR MONITORING A PARAMETER OF A MEASUREMENT DEVICE DURING POLISHING, DAMAGE TO A SPECIMEN DURING POLISHING, OR A CHARACTERISTIC OF A POLISHING PAD OR TOOL - Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals. | 12-22-2011 |
20120085919 | APPARATUS AND METHODS FOR PATTERN GENERATION - One embodiment relates to an apparatus for writing a pattern on a target substrate. The apparatus includes a plurality of arrays of pixel elements, each array being offset from the other arrays. In addition, the apparatus includes a source and lenses for generating an incident beam that is focused onto the plurality of arrays, and circuitry to control the pixel elements of each array to selectively reflect pixel portions of the incident beam to form a patterned beam. The apparatus further includes a projector for projecting the patterned beam onto the target substrate. Other features, aspects and embodiments are also disclosed. | 04-12-2012 |
20120273686 | APPARATUS AND METHODS FOR ELECTRON BEAM DETECTION - One embodiment disclosed relates a method of detecting a patterned electron beam. The patterned electron beam is focused onto a grating with a pattern that has a same pitch as the patterned electron beam. Electrons of the patterned electron beam that pass through the grating un-scattered are detected. Another embodiment relates to focusing the patterned electron beam onto a grating with a pattern that has a second pitch that is different than a first pitch of the patterned electron beam. Electrons of the patterned electron beam that pass through the grating form a Moiré pattern that is detected using a position-sensitive detector. Other embodiments, aspects and features are also disclosed. | 11-01-2012 |
20120281275 | Systems and Methods for Determining One or More Characteristics of a Specimen Using Radiation in the Terahertz Range - Systems and methods for determining one or more characteristics of a specimen using radiation in the terahertz range are provided. One system includes an illumination subsystem configured to illuminate the specimen with radiation. The system also includes a detection subsystem configured to detect radiation propagating from the specimen in response to illumination of the specimen and to generate output responsive to the detected radiation. The detected radiation includes radiation in the terahertz range. In addition, the system includes a processor configured to determine the one or more characteristics of the specimen using the output. | 11-08-2012 |
20130035877 | Methods and Systems for Determining a Characteristic of a Wafer - Methods and systems for determining a characteristic of a wafer are provided. One method includes generating output responsive to light from the wafer using an inspection system. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The method also includes determining the characteristic of the wafer using the second output. One system includes an inspection subsystem configured to illuminate the wafer and to generate output responsive to light from the wafer. The output includes first output corresponding to defects on the wafer and second output that does not correspond to the defects. The system also includes a processor configured to determine the characteristic of the wafer using the second output. | 02-07-2013 |