Patent application number | Description | Published |
20080308035 | Removable Thermal Control for Ribbon Crystal Pulling Furnaces - A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible. | 12-18-2008 |
20090060823 | Reduced Wetting String for Ribbon Crystal - A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees. | 03-05-2009 |
20090061224 | Ribbon Crystal String with Extruded Refractory Material - A method of making string for string ribbon crystal provides a substrate having an outer surface, and extrudes refractory material over the substrate. The refractory material substantially covers the outer surface of the substrate. The method then cures the refractory material. | 03-05-2009 |
20100055412 | String With Refractory Metal Core For String Ribbon Crystal Growth - A method of forming a string for use in a string ribbon crystal provides a refractory metal as a core for the string and forms a first layer of material on the core. A method of growing a ribbon crystal provides a pair of strings. Each string has a refractory metal core. The method further passes the strings through a molten material to grow the ribbon crystal between the pair of strings. | 03-04-2010 |
20100092776 | Ribbon Crystal Having Reduced Wetting String - A string for use in a string ribbon crystal has a base portion with a refractory material, and an externally exposed layer radially outward of the refractory material. The base portion has a coefficient of thermal expansion that is generally matched with the coefficient of thermal expansion for silicon. The externally exposed layer has a contact angle with silicon of between about 15 and 120 degrees. | 04-15-2010 |
20110155045 | Controlling the Temperature Profile in a Sheet Wafer - A sheet wafer growth system includes a crucible for containing molten material and an afterheater positioned above the crucible. The afterheater has an inner surface disposed toward the crucible. The system further includes one or more shields adjacent to the inner surface of the afterheater. The afterheater and the shield(s) are configured to allow a sheet wafer to pass adjacent to the shield(s). Each shield has two or more substantially different thermally conductive regions such that the two or more regions are configured to control the temperature profile of the growing sheet wafer. | 06-30-2011 |
20110247546 | Ribbon Crystal String for Increasing Wafer Yield - A ribbon crystal has a body with a width dimension, and string embedded within the body. The string has a generally elongated cross-sectional shape. This cross-section (of the string) has a generally longitudinal axis that diverges with the width dimension of the ribbon crystal body. | 10-13-2011 |
20120125254 | Method for Reducing the Range in Resistivities of Semiconductor Crystalline Sheets Grown in a Multi-Lane Furnace - A method for reducing the range in resistivities of semiconductor crystalline sheets produced in a multi-lane growth furnace. A furnace for growing crystalline sheets is provided that includes a crucible with a material introduction region and a crystal growth region including a plurality of crystal sheet growth lanes. The crucible is configured to produce a generally one directional flow of material from the material introduction region toward the crystal sheet growth lane farthest from the material introduction region. Silicon doped with both a p-type dopant and an n-type dopant in greater than trace amounts is introduced into the material introduction region. The doped silicon forms a molten substance in the crucible called a melt. Crystalline sheets are formed from the melt at each growth lane in the crystal growth region. Co-doping the silicon feedstock can reduce the variation in resistivities among the crystalline sheets formed in each lane. | 05-24-2012 |
20140083349 | REMOVABLE THERMAL CONTROL FOR RIBBON CRYSTAL PULLING FURNACES - A ribbon crystal pulling furnace has a base insulation and a liner insulation removably connected to the base insulation. At least a portion of the liner insulation forms an interior for containing a crucible. | 03-27-2014 |