Patent application number | Description | Published |
20120229802 | Surface Scanning Inspection System With Adjustable Scan Pitch - A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection. | 09-13-2012 |
20130050689 | Large Particle Detection For Multi-Spot Surface Scanning Inspection Systems - The illumination power density of a multi-spot inspection system is adjusted in response to detecting a large particle in the inspection path of an array of primary illumination spots. At least one low power, secondary illumination spot is located in the inspection path of an array of relatively high power primary illumination spots. Light scattered from the secondary illumination spot is collected and imaged onto one or more detectors without overheating the particle and damaging the wafer. Various embodiments and methods are presented to distinguish light scattered from secondary illumination spots. In response to determining the presence of a large particle in the inspection path of a primary illumination spot, a command is transmitted to an illumination power density attenuator to reduce the illumination power density of the primary illumination spot to a safe level before the primary illumination spot reaches the large particle. | 02-28-2013 |
20130250385 | Laser with Integrated Multi Line or Scanning Beam Capability - A method and system for providing illumination is disclosed. The method may include providing a laser having a predetermined wavelength; performing at least one of: beam splitting or beam scanning prior to a frequency conversion; converting a frequency of each output beam of the at least one of: beam splitting or beam scanning; and providing the frequency converted output beam for illumination. | 09-26-2013 |
20140118729 | Illumination Energy Management in Surface Inspection - The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer. | 05-01-2014 |
20140139829 | Inspection Beam Shaping For Improved Detection Sensitivity - Methods and systems for reshaping the beam intensity distribution of an illumination light supplied to a specimen under inspection are presented. A scanning surface inspection system includes a beam shaping element that flattens the beam intensity distribution of a beam of light generated by an illumination source. The reshaped illumination light is directed to the wafer surface over an illumination spot. With a flattened beam intensity distribution, the incident beam power can be increased without the beam intensity exceeding the damage threshold of the wafer at any particular location. In addition, the illumination spot is shaped by the beam shaping element to have a variable beam width in a direction parallel to the inspection track. The location of a defect within an inspection area having a variable beam width is estimated based on an analysis of the output of the detector. | 05-22-2014 |
20140268118 | Multi-Spot Defect Inspection System - The disclosure is directed to a system and method for inspecting a spinning sample by substantially simultaneously scanning multiple spots on a surface of the sample utilizing a plurality of illumination beams. Portions of illumination reflected, scattered, or radiated from respective spots on the surface of the sample are collected by at least one detector array. Information associated with at least one defect of the sample is determined by at least one computing system in communication with the detector array. According to various embodiments, at least one of scan pitch, spot size, spot separation, and spin rate is controlled to compensate pitch error due to tangential spot separation. | 09-18-2014 |
20140328043 | Illumination Energy Management in Surface Inspection - The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer. | 11-06-2014 |
20150055128 | Surface Scanning Inspection System With Independently Adjustable Scan Pitch - A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection. | 02-26-2015 |