| Patent application number | Description | Published |
|---|
| 20080253948 | METHOD FOR THE RECYCLING AND PURIFICATION OF AN INORGANIC METALLIC PRECURSOR - Methods and apparatus for the recycling and purification of an inorganic metallic precursor. A first gaseous stream containing ruthenium tetroxide is provided, and transformed into a solid phase lower ruthenium oxide. This lower phase ruthenium oxide is reduced with hydrogen to form ruthenium metal. The ruthenium metal is contacted with an oxidizing mixture to produce a stream containing ruthenium tetroxide, and any remaining oxidizing compounds are removed from this stream through a distillation. | 10-16-2008 |
| 20080260969 | Method for Producing Silicon Nitride Films - (Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR | 10-23-2008 |
| 20080268642 | DEPOSITION OF TRANSITION METAL CARBIDE CONTAINING FILMS - Methods and compositions for the deposition of a transition metal containing film in a semiconductor manufacturing process. A first vaporized metal precursor is introduced into a reaction chamber along with a second precursor mixture which comprises at least one carbon source. The reaction chamber contains at least one substrate, and a metal containing film is formed on the substrate through a deposition process | 10-30-2008 |
| 20080286983 | DEPOSITION OF TA- OR NB-DOPED HIGH-K FILMS - Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films. The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes. | 11-20-2008 |
| 20080311746 | NEW METAL PRECURSORS FOR SEMICONDUCTOR APPLICATIONS - Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes. | 12-18-2008 |
| 20090028745 | RUTHENIUM PRECURSOR WITH TWO DIFFERING LIGANDS FOR USE IN SEMICONDUCTOR APPLICATIONS - Methods of forming a ruthenium containing film on a substrate with a ruthenium precursor which contains nitrogen and two differing ligands. | 01-29-2009 |
| 20090029036 | COBALT PRECURSORS FOR SEMICONDUCTOR APPLICATIONS - Methods and compositions for depositing a cobalt containing film on one or more substrates are disclosed herein. A cobalt precursor, which comprises at least one pentadienyl ligand coupled to the cobalt for thermal stability, is introduced into a reaction chamber containing one or more substrates, and the cobalt precursor is deposited to form a cobalt containing film onto the substrate. | 01-29-2009 |
| 20090074652 | TELLURIUM PRECURSORS FOR GST DEPOSITION - A process for depositing a tellurium-containing film on a substrate is disclosed, including (a) providing a substrate in a reactor; (b) introducing into the reactor at least one tellurium-containing precursor having the formula TeL | 03-19-2009 |
| 20090075490 | METHOD OF FORMING SILICON-CONTAINING FILMS - A method of forming a silicon-containing film comprising providing a substrate in a reaction chamber, injecting into the reaction chamber at least one silicon-containing compound; injecting into the reaction chamber at least one co-reactant in the gaseous form; and reacting the substrate, silicon-containing compound, and co-reactant in the gaseous form at a temperature equal to or less than 550° C. to obtain a silicon-containing film deposited onto the substrate. A method of preparing a silicon nitride film comprising introducing a silicon wafer to a reaction chamber; introducing a silicon-containing compound to the reaction chamber; purging the reaction chamber with an inert gas; and introducing a nitrogen-containing co-reactant in gaseous form to the reaction chamber under conditions suitable for the formation of a monomolecular layer of a silicon nitride film on the silicon wafer. | 03-19-2009 |
| 20090104375 | NEUTRAL LIGAND CONTAINING PRECURSORS AND METHODS FOR DEPOSITION OF A METAL CONTAINING FILM - Methods and compositions for depositing metal films are described herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver or copper. More specifically, the disclosed precursor compounds utilize neutral ligands derived from ethylene or acetylene. | 04-23-2009 |
| 20090197411 | NEW METAL PRECURSORS CONTAINING BETA-DIKETIMINATO LIGANDS - Methods and compositions for depositing a metal containing thin film on a substrate comprises introducing a vapor phase metal-organic precursor into a reaction chamber containing one or more substrates. The precursor has at least one β-diketiminato ligand, and has the general formula: | 08-06-2009 |
| 20090203222 | METHOD OF FORMING DIELECTRIC FILMS, NEW PRECURSORS AND THEIR USE IN SEMICONDUCTOR MANUFACTURING - Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): | 08-13-2009 |
| 20090232985 | METHOD OF FORMING SILICON OXIDE CONTAINING FILMS - A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 4000 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate. | 09-17-2009 |
| 20090236568 | ALKALI EARTH METAL PRECURSORS FOR DEPOSITING CALCIUM AND STRONTIUM CONTAINING FILMS - Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium. | 09-24-2009 |
| 20090242852 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 10-01-2009 |
| 20090256127 | Compounds for Depositing Tellurium-Containing Films - Disclosed herein are tellurium metal-organic precursors and methods for depositing tellurium-containing films on a substrate. | 10-15-2009 |
| 20090302434 | Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 12-10-2009 |
| 20090311879 | METHOD OF FORMING HIGH-K DIELECTRIC FILMS BASED ON NOVEL TITANIUM, ZIRCONIUM, AND HAFNIUM PRECURSORS AND THEIR USE FOR SEMICONDUCTOR MANUFACTURING - A method of forming on at least one support at least one metal containing dielectric films having the formula (M | 12-17-2009 |
| 20100003532 | BETA-DIKETIMINATE PRECURSORS FOR METAL CONTAINING FILM DEPOSITION - Methods and compositions for depositing a metal containing film on a substrate are disclosed. A reactor, and at least one substrate disposed in the reactor, are provided. A metal containing precursor with at least one β-diketiminate ligand is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Metal is deposited onto the substrate through a deposition process to form a thin film on the substrate. | 01-07-2010 |
| 20100003835 | Low-K Precursors Based on Silicon Cryptands, Crown Ethers and Podands - Disclosed herein is the use of a silicon podand, silicon crown ether, or silicon cryptand to form a low-k dielectric film on a substrate. | 01-07-2010 |
| 20100016620 | PENTAKIS(DIMETHYLAMINO) DISILANE PRECURSOR COMPRISING COMPOUND AND METHOD FOR THE PREPARATION THEREOF - Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON. | 01-21-2010 |
| 20100021747 | HETEROLEPTIC CYCLOPENTADIENYL TRANSITION METAL PRECURSORS FOR DEPOSITION OF TRANSITION METAL-CONTAINING FILMS - Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film. | 01-28-2010 |
| 20100022790 | METHODS FOR SYNTHESIS OF HETEROLEPTIC CYCLOPENTADIENYL TRANSITION METAL PRECURSORS - Methods for forming heteroleptic amidinate or guanidinate cyclopentadienyl containing transition metal precursors through synthesis reactions. | 01-28-2010 |
| 20100034719 | NOVEL LANTHANIDE BETA-DIKETONATE PRECURSORS FOR LANTHANIDE THIN FILM DEPOSITION - Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide thin film layer is deposited onto the substrate. | 02-11-2010 |
| 20100034971 | METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM - Organometallic compound of the formula (I): wherein: L is a non-aromatic cyclic unsaturated hydrocarbon ligand (L), having at least six cyclic carbon atoms, said cycle being unsubstituted or substituted, and X is either a non aromatic cyclic unsaturated hydrocarbon ligand identical or different from (L), having at least six cyclic carbon atoms said cycle being unsubstituted or substituted or a cyclic or acyclic conjugated alkadienyl hydrocarbon ligand having from five to ten carbons atoms, said hydrocarbon ligand being unsubstituted or substituted. | 02-11-2010 |
| 20100055310 | GROUP V METAL CONTAINING PRECURSORS AND THEIR USE FOR METAL CONTAINING FILM DEPOSITION - Compound of the formula (Ia), or of the formula (Ib). These new precursors are useful for pure metal, metallic oxide, oxynitride, nitride and/or silicide film deposition to make electrodes and/or high k layers, and/or copper diffusion barrier layers, etc. | 03-04-2010 |
| 20100104755 | DEPOSITION METHOD OF TERNARY FILMS - Method for producing a metal-containing film by introducing a metal source which does not contain metal-C or metal-N—C s-bonds (for example, TaCl5, SEt2), a silicon precursor (for example, SiH(NMe2)3 or (SiH3)3N), a nitrogen precursor such as ammonia, a carbon source such as monomethylamine or ethylene and a reducing agent (for example, H2) into a CVD chamber and reacting same at the surface of a substrate to produce metal containing films in a single step. | 04-29-2010 |
| 20100119406 | ALLYL-CONTAINING PRECURSORS FOR THE DEPOSITION OF METAL-CONTAINING FILMS - Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor is provided and at least partially deposited on the substrate to form a metal containing film. | 05-13-2010 |
| 20100130025 | METHOD FOR FORMING A DIELECTRIC FILM AND NOVEL PRECURSORS FOR IMPLEMENTING SAID METHOD - The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—Cn-Si chain where n=l. | 05-27-2010 |
| 20100193951 | METAL PRECURSORS FOR DEPOSITION OF METAL-CONTAINING FILMS - Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate. | 08-05-2010 |
| 20100221428 | METHOD FOR DEPOSITING SILICON NITRIDE FILMS AND/OR SILICON OXYNITRIDE FILMS BY CHEMICAL VAPOR DEPOSITION - Pentakis(dimethylamino) disilane comprising compound is used along with a nitrogen containing gas and optionally an oxygen containing gas for SiN (and optionally SiON) film deposition by CVD. | 09-02-2010 |
| 20100221577 | METHOD FOR THE DEPOSITION OF A RUTHENIUM CONTAINING FILM - The invention concerns the use of the ruthenium containing precursor having the formula (R | 09-02-2010 |
| 20110207337 | METHOD OF FORMING DIELECTRIC FILMS, NEW PRECURSORS AND THEIR USE IN SEMICONDUCTOR MANUFACTURING - The application relates to a method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (M | 08-25-2011 |
| 20110250354 | TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION - Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 10-13-2011 |
| 20110275215 | METHOD FOR FORMING A TITANIUM-CONTAINING LAYER ON A SUBSTRATE USING AN ATOMIC LAYER DEPOSITION (ALD) PROCESS - A method for forming a titanium-containing layer on a substrate, the method comprising at least the steps of: a) providing a vapor comprising at least one precursor compound of the formula Ti(Me | 11-10-2011 |
| 20110275507 | METHOD FOR FORMING A DIELECTRIC FILM AND NOVEL PRECURSORS FOR IMPLEMENTING SAID METHOD - The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—Cn—Si chain where n=I. | 11-10-2011 |
| 20120065420 | DEPOSITION OF TA- OR NB-DOPED HIGH-K FILMS - Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films, The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes. | 03-15-2012 |
| 20120070582 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 03-22-2012 |
| 20120122313 | METAL PRECURSORS FOR DEPOSITION OF METAL-CONTAINING FILMS - Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate. | 05-17-2012 |
| 20120145953 | LITHIUM PRECURSORS FOR LixMyOz MATERIALS FOR BATTERIES - Disclosed are lithium-containing compounds and methods of utilizing the same. The disclosed compounds may be used to deposit alkali metal-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. In certain embodiments, the lithium-containing compounds include a ligand and at least one aliphatic group as substituents selected to have greater degrees of freedom than the usual substituent. | 06-14-2012 |
| 20120156373 | PREPARATION OF CERIUM-CONTAINING PRECURSORS AND DEPOSITION OF CERIUM-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 06-21-2012 |
| 20120207927 | HAFNIUM- AND ZIRCONIUM-CONTAINING PRECURSORS AND METHODS OF USING THE SAME - Disclosed are hafnium- and zirconium-containing precursors and methods of providing the same. The disclosed precursors include a ligand and at least one aliphatic group as substituent selected to have greater degrees of freedom than the usual substituents. The disclosed precursors may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 08-16-2012 |
| 20120207928 | METHODS OF MAKING AND DEPOSITION METHODS USING HAFNIUM- OR ZIRCONIUM-CONTAINING COMPOUNDS - Disclosed are hafnium- or zirconium-containing compounds. The compounds may be used to deposit hafnium- or zirconium-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. The hafnium- or zirconium-containing compounds include a ligand at least one aliphatic group as substituents selected to have greater degrees of freedom than the substituents disclosed in the prior art. | 08-16-2012 |
| 20120227762 | PLASMA ASHING COMPOUNDS AND METHODS OF USE - Disclosed are compounds for plasma ashing photoresist layers on a substrate and methods of using the same. The plasma ashing compounds induce limited to no damage to the underlying layer, such as the low-k film layer. | 09-13-2012 |
| 20120276292 | METHOD OF FORMING SILICON OXIDE CONTAINING FILMS - A method of forming a silicon oxide film, comprising the steps of:
| 11-01-2012 |
| 20120321817 | BIS-KETOIMINATE COPPER PRECURSORS FOR DEPOSITION OF COPPER-CONTAINING FILMS - Disclosed are processes for the use of bis-ketoiminate copper precursors for the deposition of copper-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD). | 12-20-2012 |
| 20120329999 | PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF LANTHANIDE-CONTAINING FILMS - Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand. | 12-27-2012 |
| 20130011580 | CYCLOPENTADIENYL TRANSITION METAL PRECURSORS FOR DEPOSITION OF TRANSITION METAL-CONTAINING FILMS - Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film. | 01-10-2013 |
| 20130022745 | SILANE BLEND FOR THIN FILM VAPOR DEPOSITION - Disclosed are non-pyrophoric mixtures of silicon compounds and solvents. Also disclosed are methods of stabilizing the pyrophoric silicon compounds (precursors). The non-pyrophoric mixtures may be used to deposit silicon-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 01-24-2013 |
| 20130084407 | PLASMA-ENHANCED DEPOSITION OF COPPER-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE COPPER PRECURSORS - The disclosure relates to a process for depositing a Copper, Gold or Silver containing film using a Copper, Gold or Silver guanidinate and/or Copper, Gold or Silver amidinate precursor, suitable for plasma deposition at temperature equal or lower than 120 degrees C., to a plasma deposition process carried out at a temperature equal or lower than 120 degrees C. | 04-04-2013 |
| 20130089678 | PLASMA-ENHANCED DEPOSITION OF NICKEL-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE NICKEL PRECURSORS - The disclosure relates to a process for depositing a Nickel or Cobalt containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C. | 04-11-2013 |
| 20130089679 | PLASMA-ENHANCED DEPOSITION OF MANGANESE-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE MANGANESE PRECURSORS - The disclosure relates to a process for depositing a Manganese-containing film comprising the step of providing a metal guanidinate and/or metal amidinate precursor, suitable for plasma deposition at temperature equal or lower than 500 degrees C., to a plasma deposition process comprising a deposition temperature equal or lower than 500 degrees C. | 04-11-2013 |
| 20130089680 | PLASMA-ENHANCED DEPOSITION OF RUTHENIUM-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE RUTHENIUM PRECURSORS - The present invention relates to a process for the use of Ruthenium amidinate metal precursors for the deposition of Ruthenium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD). | 04-11-2013 |
| 20130089681 | PLASMA-ENHANCED DEPOSITION OF TITANIUM-CONTAINING FILMS FOR VARIOUS APPLICATIONS USING AMIDINATE TITANIUM PRECURSORS - The present invention relates to a process for the use of Titanium amidinate metal precursors for the deposition of Titanium-containing films via Plasma Enhanced Atomic Layer Deposition (PEALD) or Plasma Enhanced Chemical Vapor Deposition (PECVD). | 04-11-2013 |
| 20130109198 | HIGH CARBON CONTENT MOLECULES FOR AMORPHOUS CARBON DEPOSITION | 05-02-2013 |
| 20140017907 | NITRIDATION OF ATOMIC LAYER DEPOSITED HIGH-K DIELECTRICS USING TRISILYLAMINE - A method is provided for forming a nitrided high-k film in an atomic layer deposition process (ALD) process. The method includes receiving a substrate in a process chamber, maintaining the substrate at a temperature sufficient for ALD of a nitrided high-k film, and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a gas pulse comprising a metal-containing precursor, b) exposing the substrate to a gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a gas pulse comprising trisilylamine gas, where the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that includes nitrogen and that is substantially free of silicon, and repeating the gas pulse sequence. A trisilylamine gas exposure may also be used to nitride a deposited high-k film. | 01-16-2014 |
