Patent application number | Description | Published |
20080227287 | Method For Dual Damascene Process - The present disclosure provides a method of dual damascene processing. The method includes providing a substrate having vias formed therein; forming an under-layer in the vias and on the substrate; applying a solvent washing process to the under-layer; forming a silicon contained layer on the under-layer; patterning the silicon contained layer (SCL) to form SCL openings exposing the under-layer within the SCL openings; and etching the substrate and the under-layer within the SCL openings to form trenches. | 09-18-2008 |
20080280230 | PHOTOLITHOGRAPHY PROCESS INCLUDING A CHEMICAL RINSE - The present disclosure provides a plurality of methods of performing a lithography process. In one embodiment, a substrate including a layer of photoresist is provided. The layer of photoresist is exposed. The exposed layer of photoresist is developed. A chemical rinse solution is applied to the developed photoresist. The chemical rinse solution includes an alcohol base chemical. The substrate is spun dry. | 11-13-2008 |
20080299487 | LITHOGRAPHY MATERIAL AND LITHOGRAPHY PROCESS - An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer. | 12-04-2008 |
20080304025 | APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY - An immersion lithography apparatus includes a lens assembly having an imaging lens, a wafer stage for securing a wafer beneath the lens assembly, a fluid module for providing a fluid into a space between the lens assembly and the wafer, and a plurality of extraction units positioned proximate to an edge of the wafer. The extraction units are configured to operate independently to remove a portion of the fluid provided into the space between the lens assembly and the wafer. | 12-11-2008 |
20080309891 | APPARATUS AND METHOD FOR IMMERSION LITHOGRAPHY - Immersion lithography apparatus and method using a shield module are provided. An immersion lithography apparatus including a lens module having an imaging lens, a substrate table positioned beneath the lens module and configured for holding a substrate for processing, a fluid module for providing an immersion fluid to a space between the lens module and the substrate on the substrate table, and a shield module for covering an edge of the substrate during processing. | 12-18-2008 |
20100055923 | Conformal Etch Material and Process - The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern. | 03-04-2010 |
20100068874 | METHOD FOR FORMING A SACRIFICIAL SANDWICH STRUCTURE - The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a sacrificial layer on the second material layer; forming a patterned resist layer on the sacrificial layer; applying a first wet etching process using a first etch solution to the substrate to pattern the sacrificial layer using the patterned resist layer as a mask, resulting in a patterned sacrificial layer; applying an ammonia hydroxide-hydrogen peroxide-water mixture (APM) solution to the substrate to pattern the second material layer, resulting in a patterned second material layer; applying a second wet etching process using a second etch solution to the substrate to pattern the first material layer; and applying a third wet etching process using a third etch solution to remove the patterned sacrificial layer. | 03-18-2010 |
20100093176 | METHOD OF FORMING A SACRIFICIAL LAYER - The present disclosure provides a method for making a semiconductor device. The method includes forming a material layer on a substrate; forming a sacrificial layer on the material layer, where the material layer and sacrificial layer each as a thickness less than 100 angstrom; forming a patterned photoresist layer on the sacrificial layer; applying a first wet etching process to etch the sacrificial layer to form a patterned sacrificial layer using the patterned photoresist layer as a mask; applying a second wet etching process to etch the first material layer; and applying a third wet etching process to remove the patterned sacrificial layer. | 04-15-2010 |
20100099267 | SYSTEM AND METHOD OF VAPOR DEPOSITION - Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material. | 04-22-2010 |
20110008956 | SELF-ASSEMBLY PATTERN FOR SEMICONDUCTOR INTEGRATED CIRCUIT - A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature. | 01-13-2011 |
20110059396 | PATTERNING PROCESS AND CHEMICAL AMPLIFIED PHOTORESIST WITH A PHOTODEGRADABLE BASE - A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer. | 03-10-2011 |
20110164234 | NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESSES - A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy. | 07-07-2011 |
20110165515 | NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESSES - A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy. | 07-07-2011 |
20110229829 | LITHOGRAPHY MATERIAL AND LITHOGRAPHY PROCESS - An immersion lithography resist material comprising a matrix polymer having a first polarity and an additive having a second polarity that is substantially greater than the first polarity. The additive may have a molecular weight that is less than about 1000 Dalton. The immersion lithography resist material may have a contact angle that is substantially greater than the contact angle of the matrix polymer. | 09-22-2011 |
20120028477 | Self-Assembly Pattern for Semiconductor Integrated Circuit - A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature. | 02-02-2012 |
20120236276 | Immersion Lithography System Using Direction-Controlling Fluid Inlets - Immersion lithography system and method using direction-controlling fluid inlets are described. According to one embodiment of the present disclosure, an immersion lithography apparatus includes a lens assembly having an imaging lens disposed therein and a wafer stage configured to retain a wafer beneath the lens assembly. The apparatus also includes a plurality of direction-controlling fluid inlets disposed adjacent to the lens assembly, each direction-controlling fluid inlet in the plurality of direction-controlling fluid inlets being configured to direct a flow of fluid beneath the lens assembly and being independently controllable with respect to the other fluid inlets in the plurality of direction-controlling fluid inlets. | 09-20-2012 |
20120258400 | NOVEL TARC MATERIAL FOR IMMERSION WATERMARK REDUCTION - A coating material for use during a lithography process. In an example, a coating material disposed on a material layer includes a polymer and a quencher catcher chemically bonded to the polymer. The quencher catcher substantially neutralizes any quencher that diffuses into the coating material from the material layer. | 10-11-2012 |
20130164938 | Selective Bias Compensation for Patterning Steps in CMOS Processes - A method includes forming a photo resist pattern, and performing a light-exposure on a first portion of the photo resist pattern, wherein a second portion of the photo resist pattern is not exposed to light. A photo-acid reactive material is coated on the first portion and the second portion of the photo resist pattern. The photo-acid reactive material reacts with the photo resist pattern to form a film. Portions of the photo-acid reactive material that do not react with the photo resist pattern are then removed, and the film is left on the photo resist pattern. | 06-27-2013 |
20130244434 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a plurality of circuit devices over a substrate. The method includes forming an organic layer over the substrate. The organic layer is formed over the plurality of circuit devices. The method includes polishing the organic layer to planarize a surface of the organic layer. The organic layer is free of being thermally treated prior to the polishing. The organic material is un-cross-linked during the polishing. The method includes depositing a LT-film over the planarized surface of the organic layer. The depositing is performed at a temperature less than about 150 degrees Celsius. The depositing is also performed without using a spin coating process. The method includes forming a patterned photoresist layer over the LT-film. | 09-19-2013 |
20130330671 | SURFACE SWITCHABLE PHOTORESIST - Lithography methods on a semiconductor substrate are described. The methods include coating a resist layer on the substrate, wherein the resist layer comprises a resist polymer configured to turn soluble to a base solution in response to reaction with an acid, and a switchable polymer that includes a base soluble polymer having a carboxylic acid, hydroxyl, lactone, or anhydride functional group, performing a pre-exposure bake on the resist layer, exposing the resist-coated substrate, and developing the exposed substrate with a developing solution. | 12-12-2013 |
20140251926 | Laminar Flow Intake Channeling Device - A filtering unit is provided which may include a filter cap, a filter basin, a filter or membrane within the filter basin and an enclosed fluid intake channel, which may dispense fluid into the filter basin. The enclosed fluid intake channel may be coupled to the inlet port of the filtering unit and may slope in a downward manner to the bottom of the filter basin. The intake channel may have an open end at the bottom of the filter basin. The open end may be substantially parallel with the filter basin bottom and may dispense fluid into the filter basin. The fluid may flow from the intake channel and into the filter basin in a laminar manner. The fluid may fill the filter basin and flow from the filtering unit through an outlet port of the filtering unit. | 09-11-2014 |
20140255850 | Photo-Resist with Floating Acid - A method for fabricating a semiconductor product includes applying a photo-resist layer to a substrate, the photo-resist layer including a higher acid concentration at an upper portion of the photo-resist layer than at a lower portion of the photo-resist layer. The method also includes exposing the photo-resist layer to a light source through a mask including a feature, the photo-resist layer including a floating, diffusing acid that will diffuse into a region of the photo-resist layer affected by the feature while not diffusing into a feature formed by the mask. | 09-11-2014 |
20140264766 | System and Method for Film Stress Release - Disclosed herein is a method of forming a stress relieved film stack, the method comprising forming a film stack on a first side of a substrate, the film stack comprising a plurality of film layers and creating a plurality of film stack openings according to a cutting pattern and along at least a portion of a buffer region. The plurality of film stack openings extend from a top surface of the film stack to the substrate. A deflection of the substrate may be determined, and the cutting pattern selected prior to creating the film stack openings based on the deflection of the substrate. The substrate may have a deflection of less than about 2 μm after the creating the plurality of film stack openings. And at least one of the plurality of film layers may comprise one of titanium nitride, silicon carbide and silicon dioxide. | 09-18-2014 |
20140272716 | Photoresist System and Method - A system and method for photoresists is provided. In an embodiment the photoresist is exposed in a photoresist track system and developed in an offline developing system. After the photoresist is exposed, the photoresist may be idled for a time period prior to being developed in the offline developing system. | 09-18-2014 |
20140273509 | Method and Apparatus for Planarization of Substrate Coatings - Disclosed herein is a method of forming a coating, comprising applying a first coating to a substrate having a plurality of topographical features, planarizing a top surface of the first coating, and drying the coating after planarizing the top surface of the first coating. The first coating may be applied over the plurality of topographical features, and substantially liquid during application. The first coating may optionally be a conformal coating over topographical features of the substrate. The conformal coating may be dried prior to planarizing the top surface of the first coating and a solvent applied to the conformal coating, with the top surface of the conformal coating being substantially planar after application of the solvent. The coating may have a planar surface prior to the drying the first coating and the first coating may be dried without substantial spin-drying by modifying an environment of the first coating. | 09-18-2014 |
20150050598 | Methods for Cleaning Membranes used for Filtering Chemicals - A method includes performing a first cleaning step to clean a membrane, wherein during the first cleaning step, a first solvent passes through the membrane. After the first cleaning step, a second cleaning step is performed to clean the membrane. During the second cleaning step, a second solvent passes through the membrane. The first solvent and the second solvent are in different groups among three solvent groups, wherein the three solvent groups include a non-polar solvent group, a polar aprotic solvent group, and a polar protic solvent group. | 02-19-2015 |