Patent application number | Description | Published |
20150108534 | VERTICAL LIGHT EMITTING DIODE AND FABRICATION METHOD - A vertical LED with current blocking structure and its associated fabrication method involve an anisotropic conductive material and a conductive substrate with concave-convex structure. The anisotropic conductive material forms a bonding layer with vertical conduction and horizontal insulation between the concave-convex substrate and the light-emitting epitaxial layer, thereby forming a vertical LED with current blocking function. | 04-23-2015 |
20150179889 | Light-Emitting Device with Reflecting Electrode - An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency. | 06-25-2015 |
20150243863 | PACKAGE SUPPORT, FABRICATION METHOD AND LED PACKAGE - A package support including: metal frames connected together; one or more dielectric materials disposed in an inner gap of the metal frames; wherein: the package support has a frame region and a function region; wherein the function region has complete upper and lower surfaces configured to prevent leakage if at least one of the entire upper or lower surfaces is covered with an encapsulant material. A fabrication method allows for manufacturing the package support with a high cell density, relatively low price, high reflectivity, good heat dissipation, and high reliability. The LED package using the package support has a smaller size and improved dissipation properties. | 08-27-2015 |
20150249182 | Double-Sided LED and Fabrication Method Thereof - A double-sided LED has a double-sided light emitting structure formed by electroplating or electrocasting without the need for wire bonding. The double-sided light emitting gives the chip a light-emitting angle of 150 degrees or higher. In addition, the device has good light extraction and heat dissipation characteristics. | 09-03-2015 |
20150287897 | Light Emitting Diode Packaging Structure - A packaging structure of a vertical LED chip includes at least a support system, a glue cup that connects to periphery of the support system, a LED chip with light absorption substrate over the support system and packaging glue distributed in periphery of the LED chip, wherein the packaging structure also comprises a baffle that surrounds the outer side wall of the light absorption substrate. Adding of a baffle structure in the support system of the packaging structure can effectively prevent light from being absorbed by the light absorption substrate and reflect such light out of the packaging structure, thus increasing probability of light emitting and improving light intensity of the vertical LED chip. | 10-08-2015 |
20150295130 | Light-Emitting Device and Fabrication Method Thereof - A light-emitting device of little aging electric leakage and high luminous efficiency and fabrication thereof, in which, the light-emitting device includes: a semiconductor epitaxial laminated layer that comprises an N-type semiconductor layer, a P-type semiconductor layer and a light-emitting layer between the N-type semiconductor layer and the P-type semiconductor layer, the surface of which has deflected dislocation; electromigration resistant metal that fills into the deflected dislocation over the N-type or/and P-type semiconductor layer surface through pretreatment to block the electromigration channel formed over the semiconductor epitaxial laminated layer due to deflected dislocation to eliminate electric leakage. | 10-15-2015 |
20150295142 | Surface-Mounted Light-Emitting Device and Fabrication Method Thereof - A surface-mounted light-emitting device includes: a LED epitaxial structure having two opposite surfaces, wherein the first surface is a light-emitting surface; P and N electrode pads over the second surface of the epitaxial structure, which have sufficient thickness to support the LED epitaxial structure, and the P and N electrode pads have two opposite surfaces respectively, in which, the first surface is approximate to the LED epitaxial structure; an insulator between the P and N pads to prevent the P and N electrode pads from short circuit; and the P and N electrode pads are directly applied in the SMT package. Some embodiments allow structural changes compared with conventional SMT package type by directly mounting the chip over the supporting substrate through an electrode pad. In addition, soldering is followed after the chip process without package step, which is mainly applicable to flip-chip LED device. | 10-15-2015 |
20150318444 | Integrated LED Light-Emitting Device and Fabrication Method Thereof - An integrated LED light-emitting device includes: at least two mutually-isolated LED light-emitting epitaxial units having an upper and a lower surface, in which, the upper surface is a light-emitting surface; an electrode pad layer over the lower surface of the LED light-emitting epitaxial unit, with sufficient thickness for supporting the LED epitaxial unit and connecting to each LED light-emitting epitaxial unit to form a connection circuit plane with no height difference; and the electrode pad layer is divided into a P electrode region and an N electrode region. The LED light-emitting epitaxial units constitute a series, parallel or series-parallel circuit. Embodiments disclosed herein can effectively improve the problems of package welding, electrode shading and poor wiring stability. | 11-05-2015 |