Patent application number | Description | Published |
20080246047 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device comprises an N-type semiconductor layer, an active layer formed on the surface of the N-type semiconductor layer, a P-type semiconductor layer formed on the surface of the active layer, and a reflective layer formed on the surface of the P-type semiconductor layer. A plurality of ohmic contact blocks with electrical properties of ohmic contact are on the surface of the reflective layer adjacent to the P-type semiconductor layer, and the remaining part of the surface acts as the reflective regions with higher reflectivity, and the reflective regions can effectively reflect the light generated from the active layer. | 10-09-2008 |
20090121214 | III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device comprises a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface has a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses. | 05-14-2009 |
20090166650 | LIGHT-EMITTING DEVICE OF GROUP III NITRIDE-BASED SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF - A light-emitting device of Group III nitride-based semiconductor comprises a substrate, a first Group III nitride layer and a second Group III nitride layer. The substrate comprises a first surface and a plurality of convex portions protruding from the first surface. Each convex portion is surrounded by a part of the first surface. The first Group III nitride layer is jointly formed by lateral growth starting at top surfaces of the convex portions. The second Group III nitride layer is formed on the first surface, wherein a thickness of the second Group III nitride layer is less than a height of the convex portion. Moreover, the first Group III nitride layer and the second Group III nitride layer are made of a same material. | 07-02-2009 |
20090267097 | METHOD OF FABRICATING PHOTOELECTRIC DEVICE OF GROUP III NITRIDE SEMICONDUCTOR AND STRUCTURE THEREOF - A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer. | 10-29-2009 |
20090280625 | METHOD FOR SEPARATING SEMICONDUCTOR LAYER FROM SUBSTRATE - A method for separating a semiconductor from a substrate is disclosed. The method comprises the following steps: forming a plurality of columns on a substrate; epitaxially growing a semiconductor on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method of this invention can enhance the etching efficiency of separating the semiconductor from the substrate and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above-mentioned substrate. | 11-12-2009 |
20090321780 | GALLIUM NITRIDE-BASED LIGHT EMITTING DEVICE WITH ROUGHENED SURFACE AND FABRICATING METHOD THEREOF - A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer. | 12-31-2009 |
20100012962 | LIGHT EMITTING DIODE AND FABRICATION THEREOF - A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing the resistance to avoid the power loss. In addition, the light emitting diode further comprises a buffer layer sandwiched between the metal reflective layer and a semiconductor layer, wherein the buffer layer is mixed with metal and non-metallic transparent material for reducing the stress between the semiconductor and the metal to decrease the possibility of the die cracking. | 01-21-2010 |
20100019256 | LIGHT EMITTING DEVICE WITH ELECTRON BLOCKING COMBINATION LAYER - A light emitting device with an electron blocking combination layer comprises an active layer, an n-type GaN layer, a p-type GaN layer, and an electron blocking combination layer which has two Group III-V semiconductor layers with different band gaps that can be deposited periodically and repeatedly on the active layer to block overflowing electrons from the active layers. | 01-28-2010 |
20100132430 | EXTRUSION DIE DEVICE - An extrusion die device includes a first die having a shaping hole. An inner periphery of the shaping hole has a plurality of twisted guiding portions. A second die includes a plurality of guiding holes. A bridge is formed between two adjacent guiding holes. A plurality of tongues extends from a surface of each bridge and each includes an input end face contiguous to the bridge and an output end face whose projection on the surface of the bridge has an angular shift relative to the input end face. A side of the second die is coupled to an input side of the first die. The tongues are received in the shaping hole. Material is squeezed through a passage between each tongue and the inner periphery of the shaping hole and rotates according to the twisting direction of the tongues, forming a hollow object with an integrally formed helical rib. | 06-03-2010 |
20100295084 | Method of Fabricating Photoelectronic Device of Group III Nitride Semiconductor and Structure Thereof - A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer. | 11-25-2010 |