Chih-Chung Chang
Chih-Chung Chang, Hsinchu TW
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20110019156 | PROJECTION SYSTEM AND METHOD THEREOF - A projection system and a method thereof are provided. The projection method includes the following steps. First, a processing module of an electronic device acquires a process ID of an application program via an operating system of the electronic device. Next, the processing module extracts display data corresponding to a window of the application program from a frame buffer of the electronic device stepwise with a predetermined frequency. Next, the processing module produces a plurality of pictures based on the extracted display data with the predetermined frequency. Next, the processing module transmits the pictures to a projector according to a predetermined transmission protocol. Finally, the projector projects the pictures sequentially. | 01-27-2011 |
Chih-Chung Chang, Changhua County TW
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20100163782 | Carbon-Containing Metal-Based Composite Material and Manufacturing Method Thereof - A carbon-containing metal-based composite material and a manufacturing method thereof are provided. The carbon-containing metal-based composite material includes a plurality of graphites, a plurality of heat-conducting reinforcements and a metal matrix. The graphites occupy 35%˜90% in volume. The heat-conducting reinforcements are distributed between the graphites. The heat-conducting reinforcements and the graphites are self-bonded. The heat-conducting reinforcements occupy 5%˜30% in volume and have a thermal conductivity larger than 200 W/mK. The metal matrix is filled between the heat-conducting reinforcements and the graphites, and the metal matrix occupies 5%˜35% in volume. | 07-01-2010 |
20130164510 | HIGH THERMALLY CONDUCTIVE COMPOSITES - Disclosed is a high thermally conductive composite, including a first composite and a second composite having a co-continuous and incompatible dual-phase manner. The first composite consists of glass fiber distributed into polyphenylene sulfide, and the second composite consists of carbon material distributed into polyethylene terephthalate. The carbon material includes graphite, graphene, carbon fiber, carbon nanotube, or combinations thereof. | 06-27-2013 |
Chih-Chung Chang, Taipei City TW
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20080232770 | METHOD FOR ACTIVATING VIDEO-AUDIO DATA IN AN OPTICAL DISC AND RELATED SYSTEM - A method for activating video-audio data in an optical disc includes determining whether a first activation signal is received or not, a program in the optical disc allowing access to partially-featured contents of the video-audio data when the first activation signal is not received, and the program in the optical disc allowing access to fully-featured contents of the video-audio data when the first activation signal is received. | 09-25-2008 |
20080235586 | METHOD AND RELATED SYSTEM FOR MULTIPLE DISPLAYS - The present invention disclosed a multiple display method. A media data is received and a first program corresponding to the media data is displayed on a first frame of a display device. The media data is analyzed to generate a second program according to a predetermined event. The second program is displayed on a second frame of the display device while displaying the first program on the first frame on a real time basis. | 09-25-2008 |
20080250251 | Systems and Methods for Hardware Driven Program Execution - Systems and methods for storing and accessing encrypted content are described. At least one embodiment includes a system for storing and accessing encrypted content comprising a secure hardware device coupled to a memory comprising a trusted module, wherein the hardware device is configured to receive content from a remote location, and wherein the hardware device is configured to encrypt content and generate a key for decrypting the content. The system further comprises logic stored within the memory configured to access the encrypted content, wherein the logic comprises a plurality of decryption modules and at least one decoder. | 10-09-2008 |
20080253563 | Systems and Methods for Executing Encrypted Programs - Systems and methods for secure program execution are described. At least one embodiment includes a system for securely executing software comprising a host configured to accept a disc containing encrypted content to be accessed and store an encrypted program used to access the content on the disc. The system further comprises a secure coprocessor communicatively coupled to the host and configured to receive the encrypted program, decrypt and execute the encrypted program, and communicate an output generated by the program back to the host. | 10-16-2008 |
20090235090 | Method for Decrypting an Encrypted Instruction and System thereof - Methods of preventing private information, which is hidden within data of a private domain reserved by an application program, from being easily accessed by a CPU and other devices, both where the data of the private domain is decrypted and the access to said data are restricted are disclosed, where the mentioned other devices do not include a decryption module utilized in the methods. Therefore, as long as agreements related to encryptions and decryptions are made in advance between the application program and the decryption module, private information can be well protected. | 09-17-2009 |
Chih-Chung Chang, Corvallis, OR US
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20090200541 | MAKING A STRUCTURE - A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface. | 08-13-2009 |
Chih-Chung Chang, Tainan County TW
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20110151597 | Analysis method for semiconductor device - An analysis method for a semiconductor device is described. The semiconductor device having an abnormal region is provided. Thereafter, a focused ion beam microscope analysis process is performed to the abnormal region, wherein the result of the focused ion beam microscope analysis process shows that the abnormal region has a defect therein. After the focused ion beam microscope analysis process, an electrical property measurement step is performed to the abnormal region, so as to determine whether the defect in the abnormal region is a device failure root cause or not. | 06-23-2011 |
Chih-Chung Chang, Taoyuan County TW
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20110268907 | DECORATED DEVICE - An decorated device including a first body, a second body, a first decoration layer, and a second decoration layer is provided. The second body is disposed beside the first body. The first decoration layer contacts with the first body. The second decoration layer contacts with the second body, wherein the first body contacts with at least two of the second body, the first decoration layer, and the second decoration layer. | 11-03-2011 |
Chih-Chung Chang, Tainan City TW
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20120235299 | SEMICONDUCTOR DEVICE CONTACT STRUCTURES AND METHODS FOR MAKING THE SAME - A semiconductor contact structure and method provide contact structures that extend through a dielectric material and provide contact to multiple different subjacent materials including a silicide material and a non-silicide material such as doped silicon. The contact structures includes a lower composite layer formed using a multi-step ionized metal plasma (IMP) deposition operation. A lower IMP film is formed at a high AC bias power followed by the formation of an upper IMP film at a lower AC bias power. The composite layer may be formed of titanium. A further layer is formed as a liner over the composite layer and the liner layer may advantageously be formed using CVD and may be TiN. A conductive plug material such as tungsten or copper fills the contact openings. | 09-20-2012 |
20130264668 | Image Sensor Cross-Talk Reduction System and Method - A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid. | 10-10-2013 |
20130320541 | SEMICONDUCTOR DEVICE CONTACT STRUCTURES - Semiconductor contact structures extend through a dielectric material and provide contact to multiple different subjacent materials including a silicide material and a non-silicide material such as doped silicon. The contact structures includes a lower composite layer formed using a multi-step ionized metal plasma (IMP) deposition operation. A lower IMP film is formed at a high AC bias power followed by the formation of an upper IMP film at a lower AC bias power. The composite layer may be formed of titanium. A further layer is formed as a liner over the composite layer and the liner layer may advantageously be formed using CVD and may be TiN. A conductive plug material such as tungsten or copper fills the contact openings. | 12-05-2013 |
20150235954 | Barrier Layer and Structure Method - A method for forming a multilayer barrier comprises forming a conductive line over a substrate, depositing a dielectric layer over the conductive line, forming a plug opening in the dielectric layer, forming a multilayer barrier through a plurality of deposition processes and corresponding plasma treatment processes. | 08-20-2015 |
Chih-Chung Chang, Nantou County TW
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20130292631 | Multi-Layered Phase-Change Memory Device - The invention discloses a phase-change memory device structure and the materials used. The structure includes a substrate; a single or multiple sandwich-memory-unit(s); a first and a second electrode electrically connecting to the first and the second sides of the sandwich-memory-units and a dielectric layer used as the insulator required by the memory device. The sandwich-memory-unit composes of a memory-layer, thinner than 30 nm, sandwiched between an upper and a lower barrier-layers. The barrier-layer is either an electrical conductor in case of vertical memory-cells or an electrical insulator in case of parallel memory-cells. The sandwich-memory-unit is characteristic of increased crystallization temperature of at least 50° C. as the thickness of the memory-layer is reduced from 15 to 5 nm; and the volume change of the memory-layer is less than 3% during phase change. The thickness and memory-material in each sandwich-memory-unit can be different in the multiple sandwich-memory-units. | 11-07-2013 |
20150087144 | APPARATUS AND METHOD OF MANUFACTURING METAL GATE SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes providing a semiconductor substrate and forming a structure over the semiconductor substrate. The structure includes a sacrificial dielectric on the semiconductor substrate and a dummy gate over the sacrificial dielectric. The method further includes removing the dummy gate and the sacrificial dielectric from the structure thereby forming a trench. The method further includes filling a metal layer into the trench and covering over a top surface of an inter layer dielectric (ILD). The method also includes performing a chemical mechanical polishing (CMP) to expose the top surface of the ILD and heating the top surface of the ILD. Moreover, the method includes forming an etch stop layer on the top surface of the ILD. | 03-26-2015 |
Chih-Chung Chang, Sioushuei Township TW
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20130242578 | HIGH THERMALLY CONDUCTIVE COMPOSITES AND ILLUMINATION DEVICE - Disclosed is a high thermally conductive composite, including a first composite and a second composite having a co-continuous and incompatible dual-phase manner. The first composite consists of glass fiber distributed in polyphenylene sulfide (PPS), acrylonitrile-butadiene-styrene copolymer (ABS), polybutylene terephthalate (PBT), poly(ε-caprolactam) (Nylon 6), polyhexamethylene adipamide (nylon 66), or polypropylene (PP). The second composite consists of carbon material distributed in polyethylene terephthalate. | 09-19-2013 |
Chih-Chung Chang, New Taipei City TW
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20150308167 | EXIT LOCK ASSEMBLY - An exit lock assembly is provided. The exit lock assembly comprises a base, two doorstops, two first links, two second links, two solenoid valves and a cover. The base and the cover are combined to form a receiving space to receive the two doorstops, the two first links, the two second links and the two solenoid valves. The doorstops are closed in an initial position when the solenoid valves are not energized. When the solenoid valves are energized, two plugs of the two solenoid valves move along the direction opposite a central area and drive two fifth ends of the two second links, two fourth ends of the two second links thus get away from the third ends of the first links, and the second end of the doorstop moves down and makes the doorstops in an open status. | 10-29-2015 |
Chih-Chung Chang, Redmond, WA US
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20160073435 | MANAGEMENT CAPABILITIES FOR A WIRELESS DOCKING EXPERIENCE - This document describes management capabilities for a wireless docking experience. A wireless dock is configured to connect to multiple peripheral devices, such as a monitor, a keyboard, and a mouse. Mobile devices can connect to the wireless dock, via a short-range wireless connection, to utilize the multiple peripheral devices. When deployed with other wireless docks, the wireless dock can be configured to provide management information with a broadcast signal that is usable by the mobile devices to manage the wireless connection to, and experience with, the wireless dock. The management information can include one or more of a do-not-automatically-connect indicator, an in-use indicator, an Internet-available indicator, or a group identifier. | 03-10-2016 |