Chieh-Chih
Chieh-Chih Chen, Hsinchu County TW
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20120086052 | HIGH VOLTAGE MOS DEVICE AND METHOD FOR MAKING THE SAME - A high-voltage metal-oxide-semiconductor (HVMOS) device may include a source, a drain, a gate positioned proximate to the source, a drift region disposed substantially between the drain and a region of the gate and the source, and a self shielding region disposed proximate to the drain. A corresponding method is also provided. | 04-12-2012 |
20120241861 | Ultra-High Voltage N-Type-Metal-Oxide-Semiconductor (UHV NMOS) Device and Methods of Manufacturing the same - An ultra-high voltage n-type-metal-oxide-semiconductor (UHV NMOS) device with improved performance and methods of manufacturing the same are provided. The UHV NMOS includes a substrate of P-type material; a first high-voltage N-well (HVNW) region disposed in a portion of the substrate; a source and bulk p-well (PW) adjacent to one side of the first HVNW region, and the source and bulk PW comprising a source and a bulk; a gate extended from the source and bulk PW to a portion of the first HVNW region, and a drain disposed within another portion of the first HVNW region that is opposite to the gate; a P-Top layer disposed within the first HVNW region, the P-Top layer positioned between the drain and the source and bulk PW; and an n-type implant layer formed on the P-Top layer. | 09-27-2012 |
20130020680 | SEMICONDUCTOR STRUCTURE AND A METHOD FOR MANUFACTURING THE SAME - A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a diode. The diode comprises a first doped region, a second doped region and a third doped region. The first doped region and the third doped region have a first conductivity type. The second doped region has a second conductivity type opposite to the first conductivity type. The second doped region and the third doped region are separated from each other by the first doped region. The third doped region has a first portion and a second portion adjacent to each other. The first portion and the second portion are respectively adjacent to and away from the second doped region. A dopant concentration of the first portion is bigger than a dopant concentration of the second portion. | 01-24-2013 |
20140065781 | Ultra-High Voltage N-Type-Metal-Oxide-Semiconductor (UHV NMOS) Device and Methods of Manufacturing the same - An ultra-high voltage n-type-metal-oxide-semiconductor (UHV NMOS) device with improved performance and methods of manufacturing the same are provided. The UHV NMOS includes a substrate of P-type material; a first high-voltage N-well (HVNW) region disposed in a portion of the substrate; a source and bulk p-well (PW) adjacent to one side of the first HVNW region, and the source and bulk PW comprising a source and a bulk; a gate extended from the source and bulk PW to a portion of the first HVNW region, and a drain disposed within another portion of the first HVNW region that is opposite to the gate; a P-Top layer disposed within the first HVNW region, the P-Top layer positioned between the drain and the source and bulk PW; and an n-type implant layer formed on the P-Top layer. | 03-06-2014 |
20150048452 | ULTRA-HIGH VOLTAGE SEMICONDUCTOR HAVING AN ISOLATED STRUCTURE FOR HIGH SIDE OPERATION AND METHOD OF MANUFACTURE - A semiconductor device, in particular, an ultra-high metal oxide semiconductor (UHV MOS) device, is defined by a doped gradient structure in a drain region. For example, an ultra-high n-type metal oxide semiconductor (UHV NMOS) device is defined by an n-doped gradient structure in the drain region. The n-doped gradient structure has at least one of a high voltage n- (HVN-) well, a drain side high voltage n-type deep (HVND) well, and a drain side n-type well (NW) disposed in the drain region. A drain side n+ well is additionally disposed in the at least one of the HVN- well, the drain side HVND well, and the drain side NW. A method of manufacturing a UHV NMOS device having a doped gradient structure of a drain region is also provided. | 02-19-2015 |
Chieh-Chih Chen, Hukou Shiang TW
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20140024205 | SEMICONDUCTOR STRUCTURE AND A METHOD FOR MANUFACTURING THE SAME - A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a diode. The diode comprises a first doped region, a second doped region and a third doped region. The first doped region and the third doped region have a first conductivity type. The second doped region has a second conductivity type opposite to the first conductivity type. The second doped region and the third doped region are separated from each other by the first doped region. The third doped region has a first portion and a second portion adjacent to each other. The first portion and the second portion are respectively adjacent to and away from the second doped region. A dopant concentration of the first portion is bigger than a dopant concentration of the second portion. | 01-23-2014 |
20140054656 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure comprises a substrate, a device region, a first doped region and a gate structure. The first doped region is formed in the substrate adjacent to the device region. The gate structure is on the first doped region. The first doped region is overlapped the gate structure. | 02-27-2014 |
Chieh-Chih Tsai, Hsichih Taipei Hsien TW
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20100075650 | METHOD OF CHANGING STATUS OF INSTANT MESSAGE SOFTWARE - This invention provides a software status configuration method and a mobile communication device using the same. The mobile communication device has a real-time operation mode and a real-time usage status, respectively representing the status of the user and the usage of the mobile communication device. The mobile communication device further includes a network communication software for performing real-time communication with other contacts online. The network communication software has a user status for indicating whether the user is available for real-time communication. The software status configuration method of the present invention will configure the user status based on combinations of the current real-time operation mode and the real-time usage status. | 03-25-2010 |
Chieh-Chih Tsai, New Taipei City TW
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20130227453 | VISUALIZED INFORMATION CONVEYING SYSTEM - A handheld communication device having a logic to transfer information from a first application to a second application by using a user interface which displays a screen shot of the information gathered at the first application, and the interface also displays a list of icons indicative of other applications that is capable of receiving such information and using such information. The logic is configured to transfer the information to the second application by a drag-and-drop motion on the interface page. | 08-29-2013 |
20140109011 | VISUALIZED INFORMATION CONVEYING SYSTEM - A handheld communication device having a logic to transfer information from a first application to a second application by using a user interface which displays a screen shot of the information gathered at the first application, and the interface also displays a list of icons indicative of other applications that is capable of receiving such information and using such information. The logic is configured to transfer the information to the second application by a drag-and-drop motion on the interface page. | 04-17-2014 |
Chieh-Chih Wang, Taipei City TW
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20110137608 | Position Estimation Apparatuses and Systems and Position Estimation Methods Thereof - A position estimation system is provided, including at least one measurement unit, a plurality of evaluation units and a particle filter. The at least one measurement unit obtains a first information, wherein the first information at least includes a motion information and a corresponding noise model of a traced object. Each of the evaluation units has a corresponding evaluation model, wherein each evaluation model generates a corresponding unit displacement estimation according to the first information. The particle filter samples and generates a plurality of displacement estimations according to the unit displacement estimations and the corresponding noise models respectively. | 06-09-2011 |