Patent application number | Description | Published |
20120237861 | PHOTOMASK AND PHOTOMASK SUBSTRATE WITH REDUCED LIGHT SCATTERING PROPERTIES - A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer. | 09-20-2012 |
20130202992 | MASK AND METHOD FOR FORMING THE MASK - Provided is a method for reducing phase defects on many different types of semiconductor mask blanks. The method includes receiving a semiconductor mask blank substrate, creating alignment marks on the surface of the substrate, performing an inspection of the surface of the substrate to locate a plurality of surface defects, and repairing the plurality of surface defects on the surface of the substrate. A semiconductor mask is also provided that includes a repaired substrate a multilayer stack comprising a plurality of molybdenum and silicon layers, a capping layer, an absorber layer, and in some instances a photoresist layer. | 08-08-2013 |
20130219350 | REDUCE MASK OVERLAY ERROR BY REMOVING FILM DEPOSITED ON BLANK OF MASK - A method for reducing layer overlay errors by synchronizing the density of mask material in the frame area across the masks in a set is disclosed. An exemplary method includes creating a mask design database corresponding to a mask and containing a die area with one or more dies and a frame area outside the die area. Fiducial features within the frame area are identified, and from the fiducial features, an idle frame area is identified. A reference mask design, which corresponds to a reference mask configured to be aligned with the mask, is used to determine a reference density for the idle frame area. The idle frame area of the mask design database is modified to correspond to the reference density. The modified mask design database is then available for further use including manufacturing the mask. | 08-22-2013 |
20130260289 | METHOD OF MAKING A LITHOGRAPHY MASK - A method of fabricating a lithography mask with carbon-based-charging-dissipation (CBCD) layer is disclosed. The method includes providing a substrate, depositing an opaque layer on the substrate, coating a photoresist and depositing a charging dissipation layer on the photoresist. The photoresist is patterned by an electron-beam writing. The CBCD layer is removed during developing the photoresist. | 10-03-2013 |
20130260573 | METHOD OF MAKING A LITHOGRAPHY MASK - A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure. | 10-03-2013 |
20130280643 | REFLECTIVE MASK AND METHOD OF MAKING SAME - A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, the second absorption layer deposited inside the border ditch, and the second absorption layer contacts the capping layer. | 10-24-2013 |
20130280644 | MASK AND METHOD FOR FORMING THE SAME - A photomask includes a low thermal expansion material (LTEM) substrate, a patterned opaque layer over the LTEM substrate, and a patterned capping layer over the opaque layer. The patterned capping layer includes a transition metal material for suppressing haze growth, such as metal oxide, metal nitride, or metal oxynitride. The material in the capping layer reacts with a hydrogenic compound from a lithography environment to for an atomic level hydrogen passivation layer. The passivation layer has superior ability to suppress photo-induced haze defect growth on the photomask surface, to improve production cycle time and reduce the production cost. | 10-24-2013 |
20130323625 | Systems and Methods for Lithography Masks - Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate Mo | 12-05-2013 |
20130337370 | PHOTOMASK AND METHOD FOR FORMING THE SAME - A photomask having a machine-readable identifying mark and suitable for manufacturing integrated circuit devices and a method for forming the photomask and identifying mark are disclosed. An exemplary embodiment includes receiving a design layout corresponding to a pattern to be formed on a photomask blank. A specification of an identifying code is also received along with the photomask blank, which includes a substrate, a reflective layer, and an absorptive layer. A first patterning is performed using the design layout. A second patterning is performed using the specification of the identifying code. | 12-19-2013 |
20140038086 | Phase Shift Mask for Extreme Ultraviolet Lithography and Method of Fabricating Same - A mask and method of fabricating same are disclosed. In an example, a mask includes a substrate, a reflective multilayer coating disposed over the substrate, an Ag | 02-06-2014 |
20140038088 | Method of Fabricating a Lithography Mask - A method of fabricating an extreme ultraviolet (EUV) mask is disclosed. The method includes providing a substrate, forming a reflective multilayer (ML) over the substrate, forming a buffer layer over the reflective ML, forming an absorption layer over the buffer layer and forming a capping layer over the absorption layer. The capping layer and the absorption layer are etched to form the EUV mask. | 02-06-2014 |
20140218714 | SYSTEM, METHOD AND RETICLE FOR IMPROVED PATTERN QUALITY IN EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY AND METHOD FOR FORMING THE RETICLE - A reticle for use in an extreme ultraviolet (euv) lithography tool includes a trench formed in the opaque border formed around the image field of the reticle. The trench is coated with an absorber material. The reticle is used in an euv lithography tool in conjunction with a reticle mask and the positioning of the reticle mask and the presence of the trench combine to prevent any divergent beams of radiation from reaching any undesired areas on the substrate being patterned. In this manner, only the exposure field of the substrate is exposed to the euv radiation. Pattern integrity in neighboring fields is maintained. | 08-07-2014 |
20140253898 | PELLICLE MOUNTING SYSTEM AND METHOD - A pellicle mounting method is provided. The method includes aligning a mounting apparatus with a top surface of a pellicle frame, the mounting apparatus having a continuous duct extending therethrough and a plurality of contact pins projecting from the mounting apparatus. The method also includes introducing a pressurizing fluid into the continuous duct that causes each of the plurality of contact pins to engage the top surface of the pellicle frame with a substantially equal force, a combined force of the plurality of contact pins urging a bottom surface of the pellicle frame against a top surface of a photomask, the combined force being adjustable based on a pressure within the continuous duct. Further, the method includes adjusting the pressure within the continuous duct until the pressure is approximately equal to a pre-determined optimal pressure. | 09-11-2014 |
20140272681 | Extreme Ultraviolet Light (EUV) Photomasks, and Fabrication Methods Thereof - Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A planarized process is provided to remove the absorber layer above the top surface of the hard mask layer and form an absorber in the opening, wherein the absorber has a top portion wider than a bottom portion. | 09-18-2014 |
20140335446 | Systems and Methods for Lithography Masks - Structure of mask blanks and masks, and methods of making masks are disclosed. The new mask blank and mask comprise a tripe etching stop layer to prevent damages to the quartz substrate when the process goes through etching steps three times. The triple etching stop layer may comprise a first sub-layer of tantalum containing nitrogen (TaN), a second sub-layer of tantalum containing oxygen (TaO), and a third sub-layer of TaN. Alternatively, the triple etching stop layer may comprise a first sub-layer of SiON material, a second sub-layer of TaO material, and a third sub-layer of SiON material. Another alternative may be one layer of low etching rate Mo | 11-13-2014 |