Patent application number | Description | Published |
20080277656 | METHOD OF MANUFACTURING ZnO SEMICONDUCTOR LAYER FOR ELECTRONIC DEVICE AND THIN FILM TRANSISTOR INCLUDING THE ZnO SEMICONDUCTOR LAYER - Provided are a method of manufacturing a ZnO semiconductor layer for an electronic device, which can control the size of crystals of the ZnO semiconductor layer and the number of carriers using a surface chemical reaction between precursors, and a thin film transistor (TFT) including the ZnO semiconductor layer. The method includes: (a) loading a substrate into a chamber; (b) injecting a Zn precursor into the chamber to adsorb the Zn precursor on the substrate; (c) injecting an inert gas or N | 11-13-2008 |
20090157372 | METHOD AND APPARATUS FOR MODELING SOURCE-DRAIN CURRENT OF THIN FILM TRANSISTOR - Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT. | 06-18-2009 |
20090261389 | COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION, AND METHOD OF FABRICATING THE TRANSISTOR - A composition for an oxide semiconductor thin film, a field effect transistor (FET) using the composition, and a method of fabricating the FET are provided. The composition includes an aluminum oxide, a zinc oxide, and a tin oxide. The thin film formed of the composition remains in amorphous phase at a temperature of 400° C or less. The FET using an active layer formed of the composition has improved electrical characteristics and can be fabricated using a low-temperature process without expensive raw materials, such as In and Ga. | 10-22-2009 |
20100006837 | COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR - Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process. | 01-14-2010 |
20100019239 | METHOD OF FABRICATING ZTO THIN FILM, THIN FILM TRANSISTOR EMPLOYING THE SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR - Provided are a method of fabricating a zinc-tin-oxide (ZTO) thin film, a thin film transistor employing the same, and a method of fabricating a thin film transistor. The method of fabricating a ZTO thin film includes depositing zinc oxide and tin oxide at a deposition temperature of 450° C. or lower so that a zinc-to-tin atomic ratio is 4:1 or greater, to form an amorphous ZTO thin film. In the thin film transistor, the ZTO thin film is used as a channel layer. | 01-28-2010 |
20100155716 | THIN FILM TRANSISTOR USING BORON-DOPED OXIDE SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING THE SAME - Provided are a thin film transistor, to which a boron-doped oxide semiconductor thin film is applied as a channel layer, and a method of fabricating the same. The thin film transistor includes source and drain electrodes, a channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The channel layer is an oxide semiconductor thin film doped with boron. Therefore, it is possible to remarkably improve electrical characteristics and high temperature stability of the thin film transistor. | 06-24-2010 |
20100155792 | TRANSPARENT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided is a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. Here, the lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. Thus, the use of the multi-layered transparent conductive layer can ensure transparency and conductivity, overcome a problem of contact resistance between the source and drain electrodes and a semiconductor, and improve processibility by patterning the multi-layered transparent conductive layer all at once, while deposition is performed layer by layer. | 06-24-2010 |
20100187552 | HYBRID WHITE ORGANIC LIGHT EMITTTNG DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a hybrid white organic light emitting diode (OLED) and a method of fabricating the same. A HOMO level difference between a fluorescent emission layer and an electron transport layer in an organic emission layer (OLED) becomes higher than that between the other layers or a LUMO level difference between a fluorescent emission layer and a hole transport layer is higher than that between the other layers, so that a recombination region is restricted to a part of an emission layer to obtain high-efficiency fluorescent light emission. In addition, triplet excitons that are not used in a fluorescent emission layer are transferred to an auxiliary emission layer formed to be spaced apart from a recombination region by a predetermined distance to emit light in a different color from the fluorescent emission layer, so that both singlet and triplet excitons formed in the OLED are used to obtain high-efficiency white light emission. | 07-29-2010 |
20100243994 | TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process. | 09-30-2010 |
20100258437 | APPARATUS FOR REACTIVE SPUTTERING DEPOSITION - Provided is a reactive sputtering apparatus, and more particularly, a reactive sputtering apparatus capable of effectively ionizing a reactive gas using inductively coupled plasma (ICP). The reactive sputtering apparatus includes: a chamber having an inlet port for introducing a plasma gas thereinto and an outlet port for exhausting the gas used during reactive sputtering to the exterior; an ICP generator disposed on the chamber, ionizing a reactive gas, and injecting the ionized gas into the chamber; and at least one sputter gun located at a side surface of the chamber and supporting a target. Therefore, the reactive sputtering apparatus can improve an ionization rate of a reactive gas using inductively coupled plasma to reduce a process temperature and improve uniformity and step coverage of thin film deposition at low cost. | 10-14-2010 |
20110049592 | NONVOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME - Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region. | 03-03-2011 |
20110084274 | METHOD OF MANUFACTURING P-TYPE ZnO SEMICONDUCTOR LAYER USING ATOMIC LAYER DEPOSITION AND THIN FILM TRANSISTOR INCLUDING THE P-TYPE ZnO SEMICONDUCTOR LAYER - Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor layer. The method includes the steps of: preparing a substrate and loading the substrate into a chamber; injecting a Zn precursor and an oxygen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the oxygen precursor using an atomic layer deposition (ALD) technique to form a ZnO thin layer on the substrate; and injecting a Zn precursor and an nitrogen precursor into the chamber, and causing a surface chemical reaction between the Zn precursor and the nitrogen precursor to form a doping layer on the ZnO thin layer. | 04-14-2011 |
20110249202 | POWER REDUCTION TELEVISION WITH PHOTO FRAME - A power reduction television with a photo frame is provided. The power reduction television includes a first display configured to display a first video image, a low power second display configured to display a second video image, and a display control unit configured to control the second display to display the second video image, when the first video image is not displayed through the first display. | 10-13-2011 |
20110253997 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor device using a p-type oxide semiconductor layer and a method of manufacturing the same. The device includes the p-type oxide layer formed of at least one oxide selected from the group consisting of a copper(Cu)-containing copper monoxide, a tin(Sn)-containing tin monoxide, a copper tin oxide containing a Cu—Sn alloy, and a nickel tin oxide containing a Ni—Sn alloy. Thus, transparent or opaque devices are easily developed using the p-type oxide layer. Since an oxide layer that is formed using a low-temperature process is applied to a semiconductor device, the manufacturing process of the semiconductor device is simplified and manufacturing costs may be reduced. | 10-20-2011 |
20110266542 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor device including a dual gate transistor and a method of fabricating the same. The semiconductor device includes a lower gate electrode, an upper gate electrode on the lower gate electrode, a contact plug interposed between the lower gate electrode and the upper gate electrode, and connecting the lower gate electrode to the upper gate electrode, and a functional electrode spaced apart from the upper gate electrode and formed at the same height as the upper gate electrode. The dual gate transistor exhibiting high field effect mobility is applied to the semiconductor device, so that characteristics of the semiconductor device can be improved. In particular, since no additional mask or deposition process is necessary, a large-area high-definition semiconductor device can be mass-produced with neither an increase in process cost nor a decrease in yield. | 11-03-2011 |
20110305062 | MEMORY CELL AND MEMORY DEVICE USING THE SAME - Provided are a memory cell and a memory device using the same, particularly, a nonvolatile non-destructive readable random access memory cell including a ferroelectric transistor as a storage unit and a memory device using the same. The memory cell includes a ferroelectric transistor having a drain to which a reference voltage is applied, a first switch configured to allow a source of the ferroelectric transistor to be connected to a first line in response to a scan signal, and a second switch configured to allow a gate of the ferroelectric transistor to be connected to a second line in response to the scan signal. The memory device enables random access and performs non-destructive read-out (NDRO) operations. | 12-15-2011 |
20120032186 | WHITE ORGANIC LIGHT EMITTING DEVICE - Provided is a white organic light emitting device (OLED), including: a first electrode formed on a substrate; a hole transport layer formed on the first electrode; an emission layer formed on the hole transport layer; an electron transport layer formed on the emission layer; and an color control layer formed on at least one of the hole transport layer, the emission layer and the electron transport layer, and emitting green and/or red by energy transfer from the emission layer. The white OLED emits red, green and blue light with high efficiency, has excellent color reproducibility and a high color reproduction index. | 02-09-2012 |
20120134197 | MEMORY CELL AND MEMORY DEVICE USING THE SAME - Provided is a memory cell including: a ferroelectric transistor; a plurality of switching elements electrically connected to the ferroelectric transistor; and a plurality of control lines for transmitting individual control signals to each of the plurality of switching element for separately controlling the plurality of switching elements. The plurality of switching elements are configured to be separately controlled on the basis of the individual control signals so as to prevent each electrode of the ferroelectric transistor from being floated. | 05-31-2012 |
20120168761 | ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter. | 07-05-2012 |
20120225500 | TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process. | 09-06-2012 |
20120286271 | OXIDE THIN FILM TRANSISTOR RESISTANT TO LIGHT AND BIAS STRESS, AND A METHOD OF MANUFACTURING THE SAME - Disclosed are an oxide thin film transistor resistant to light and bias stress, and a method of manufacturing the same. The method includes forming a gate electrode on a substrate; forming a gate insulating layer on an upper part including the gate electrode; forming a source electrode and a drain electrode on the insulating layer; forming an active layer insulated from the gate electrode by the gate insulating layer and formed of an oxide semiconductor and a diffusion barrier film; and forming a protective layer on a portion of the source electrode and drain electrode and the upper part including the active layer, wherein the diffusion barrier film reduces movement of holes and prevents ionized oxygen vacancies from being diffused. | 11-15-2012 |
20120297351 | METHODS OF MODELING A TRANSISTOR AND APPARATUS USED THEREIN - Methods of modeling a transistor are provided. The method includes the steps of (a) extracting reference mobility values of a channel layer of a transistor including a gate electrode, a source region and a drain region using a reference gate voltage, a reference drain current and a reference drain voltage, (b) fitting a mobility function including model parameters on the reference mobility values to extract the model parameters, and (c) putting the extracted model parameters into a drain current modeling function to calculate a drain current flowing through the channel layer between the drain region and the source region under a bias condition defined by an arbitrary gate voltage applied to the gate electrode and an arbitrary drain voltage applied to the drain region. Related apparatuses are also provided. | 11-22-2012 |
20120315729 | METHOD OF MANUFACTURING TRANSPARENT TRANSISTOR WITH MULTI-LAYERED STRUCTURES - A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. | 12-13-2012 |
20130088285 | DC VOLTAGE CONVERSION CIRCUIT OF LIQUID CRYSTAL DISPLAY APPARATUS - Disclosed is a DC voltage conversion circuit of a liquid crystal display apparatus, including: a main pumping circuit including a plurality of thin film transistors and configured to output voltage for driving a liquid crystal display apparatus when the plurality of thin film transistors are alternately turned on or off; and a switch control signal generator configured to control voltages applied to gates of the plurality of thin film transistors by inversion of a clock signal, in which each thin film transistor is turned on when positive gate-source voltage is applied thereto, and turned off when negative gate-source voltage is applied thereto. | 04-11-2013 |
20130161732 | VERTICAL CHANNEL THIN FILM TRANSISTOR - Disclosed is a vertical channel thin film transistor including a substrate; a drain electrode formed on the substrate; a spacer formed on the substrate while coming into contact with the drain electrode; a source electrode formed on the spacer; an active layer formed on an entire surface of the substrate including the drain electrode and the source electrode and configured to form a vertical channel; a gate insulating layer formed on the active layer; and a gate electrode formed on the gate insulating layer. | 06-27-2013 |
20130189815 | METHOD OF MANUFACTURING TRANSPARENT TRANSISTOR WITH MULTI-LAYERED STRUCTURES - A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. | 07-25-2013 |
20130189816 | METHOD OF MANUFACTURING TRANSPARENT TRANSISTOR WITH MULTI-LAYERED STRUCTURES - A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. | 07-25-2013 |
20130264564 | METHOD FOR MANUFACTURING OXIDE THIN FILM TRANSISTOR - Disclosed is a method for manufacturing an oxide thin film transistor, including: forming a gate electrode on a substrate on which a buffer layer is formed; forming a gate insulation layer on an entire surface of the substrate on which the gate electrode is formed; forming an oxide semiconductor layer on the gate insulation layer; forming a first etch stop layer on the oxide semiconductor layer; forming a second etch stop layer on the first etch stop layer by an atomic layer deposition method; patterning the first etch stop layer and the second etch stop layer, or forming a contact hole, through which a part of the oxide semiconductor layer is exposed, in the first etch stop layer and the second etch stop layer; forming a source electrode and a drain electrode on the first etch stop layer and the second etch stop layer; and forming a passivation layer on the entire surface of the substrate on which the source electrode and the drain electrode are formed. | 10-10-2013 |
20130302923 | METHOD FOR MANUFACTURING AN ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE - Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter. | 11-14-2013 |
20130314633 | DUAL MODE DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A dual mode display apparatus according to the inventive concept includes a lower substrate, a first lower electrode on the lower substrate, a light switching layer on the first lower electrode, a first upper electrode on the light switching layer, a passivation layer on the first upper electrode, a contact plug connected to the first upper electrode and penetrating the passivation layer, a second lower electrode on the contact plug and the passivation layer, an organic light-emitting layer on the second lower electrode, a second upper electrode on the organic light-emitting layer, and an upper substrate on the second upper electrode. | 11-28-2013 |
20130314634 | DUAL-MODE DISPLAY DEVICE AND METHOD OF MANUFACTURING SAME - Provided are a dual-mode display device and a method of manufacturing the same. The device includes a lower substrate, an upper substrate facing the lower substrate, a thin-film transistor portion between the upper substrate and the lower substrate, a first anode on one side of the thin-film transistor portion, a first cathode between the first anode and the upper substrate, an organic light-emitting layer between the first cathode and the first anode, a second anode on the other side of the thin-film transistor portion, a second cathode between the second anode and the upper substrate, or the second anode and the lower substrate, and a optical switching layer between the second cathode and the second anode. | 11-28-2013 |
20140011297 | NONVOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME - Provided are a nonvolatile memory cell and a method of manufacturing the same. The nonvolatile memory cell includes a memory transistor and a driver transistor. The memory transistor includes a semiconductor layer, a buffer layer, an organic ferroelectric layer, and a gate electrode, which are disposed on a substrate. The driver transistor includes the semiconductor layer, the buffer layer, a gate insulating layer, and the gate electrode, which are disposed on the substrate. The memory transistor and the driver transistor are disposed on the same substrate. The nonvolatile memory cell is transparent in a visible light region. | 01-09-2014 |
20140014915 | DUAL MODE DISPLAY DEVICES AND METHODS OF MANUFACTURING THE SAME - Disclosed are dual mode display devices and methods of manufacturing the same. The dual mode display device may include a first substrate, a first electrode on the first substrate, a second substrate opposite to the first electrode and the first substrate, a second electrode between the second substrate and the first electrode, a third electrode between the first electrode and the second electrode, an optic switching layer between the first electrode and the third electrode, and an organic light-emitting layer between the second electrode and the third electrode. | 01-16-2014 |
20140035621 | INVERTER, NAND GATE, AND NOR GATE - Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal. | 02-06-2014 |
20140035622 | INVERTER, NAND GATE, AND NOR GATE - Disclosed are an inverter, a NAND gate, and a NOR gate. The inverter includes: a pull-up unit constituted by a second thin film transistor outputting a first power voltage to an output terminal according to a voltage applied to a gate; a pull-down unit constituted by a fifth thin film transistor outputting a ground voltage to the output terminal according to an input signal applied to a gate; and a pull-up driver applying a second power voltage or the ground voltage to the gate of the second thin film transistor according to the input signal. | 02-06-2014 |
20140042475 | DUAL DISPLAY DEVICE WITH VERTICAL STRUCTURE - Disclosed is a dual display device having a vertical structure, in which a reflective display device and a self-emissive display device are formed on one substrate in a vertical structure so as to enable a reflective display or a self-emissive display according to a situation and provide a high resolution display. The dual display device having a vertical structure includes: a thin film transistor formed on a substrate; a white light emitting device formed on the thin film transistor: a reflection adjusting layer formed on the white light emitting device; and a color converting layer formed on the reflection adjusting layer. | 02-13-2014 |
20140042539 | SELF-ALIGNED THIN FILM TRANSISTOR WITH DOPING BARRIER AND METHOD OF MANUFACTURING THE SAME - Disclosed are a self-aligned thin film transistor controlling a diffusion length of a doping material using a doping barrier in a thin film transistor having a self-aligned structure and a method of manufacturing the same. The self-aligned thin film transistor with a doping barrier includes: an active layer formed on a substrate and having a first doping region, a second doping region, and a channel region; a gate insulating film formed on the channel region; a gate electrode formed on the gate insulating film; a doping source film formed on the first doping region and the second doping region; and a doping barrier formed between the doping source film and the first doping region and between the doping source film and the second doping region. | 02-13-2014 |
20140062572 | SINGLE INPUT LEVEL SHIFTER - Provided is a single input level shifter. The single input level shifter includes: an input unit applying a power voltage to a first node in response to an input signal and applying the input signal to a second node in response to a reference signal; a bootstrapping unit applying the power voltage to the second node according to a voltage level of the first node; and an output unit applying the input signal to an output terminal in response to the reference signal and applying the power voltage to the output terminal according to the voltage level of the first node, wherein the bootstrapping unit includes a capacitor between the first and second nodes, and when the input signal is shifted from a first voltage level to a second voltage level, the bootstrapping unit raises the voltage level of the first node to a level higher than the power voltage. | 03-06-2014 |
20140145180 | SELF-ALIGNED THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF - Disclosed are a self-aligned thin film transistor capable of simultaneously improving an operation speed and stability and minimizing a size thereof by forming source and drain electrodes so as to be self-aligned, and a fabrication method thereof. The method of fabricating a thin film transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a gate insulator, and a gate layer on a substrate; forming a photoresist layer pattern for defining a shape of a gate electrode on the gate layer; etching the gate layer, the gate insulator, and the active layer by using the photoresist layer pattern; depositing a source and drain layer on the etched substrate by a deposition method having directionality; and forming a gate electrode and self-aligned source electrode and drain electrode by removing the photoresist layer pattern. | 05-29-2014 |
20140158997 | DUAL-MODE PIXEL INCLUDING EMISSIVE AND REFLECTIVE DEVICES AND DUAL-MODE DISPLAY WITH THE SAME - Provided is a dual-mode display including a substrate, and a plurality of sub pixels on the substrate. Each of the sub pixels may include an emissive device, a reflective optical filter provided on a surface of the emissive device, and an optical shutter provided on other surface of the emissive device. | 06-12-2014 |
20140159036 | OXIDE TRANSISTOR WITH NANO-LAYERED STRUCTURE AND METHOD OF FABRICATING THE SAME - According to example embodiments of the inventive concept, provided is a transistor with a nano-layered oxide semiconductor layer. The oxide semiconductor layer may include at least one first nano layer and at least one second nano layer that are alternatingly stacked one on another. Here, the first nano layer and the second nano layer may include different materials from each other, and thus, a channel with high electron mobility may be formed at the interface between the first and second nano layers. Accordingly, the transistor can have high reliability. | 06-12-2014 |
20140333977 | DISPLAY DEVICE - Provided is a display device. The display device includes a backlight unit generating a plurality of flat lights and a spatial light modulator (SLM) unit generating an interference pattern by using the plurality of lights according to hologram data and displaying a hologram based on the generated interference pattern. The backlight unit is manufactured as an organic light emitting diode including a plurality of quantum dots. | 11-13-2014 |
20140367689 | TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar. | 12-18-2014 |
20150084995 | DISPLAY DEVICE AND METHOD OF DRIVING THE SAME - Provided is a display device. The display device includes: a pixel including an emissive element circuit, a reflective element circuit, and a switch transistor selecting one of the emissive element circuit and the reflective element circuit; an illumination sensor generating an illumination information signal according to an illumination of an external light source by detecting the external light source; and a controller generating control signals for driving the pixel according to pixel data, wherein the controller generates a light signal controlling the switch transistor by referencing the illumination information signal. | 03-26-2015 |