Patent application number | Description | Published |
20120241793 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively. | 09-27-2012 |
20130334560 | LIGHT EMITTING DIODE CHIP - The present invention relates to a light-emitting diode chip. According to the present invention, the light-emitting diode chip comprises: a substrate, the thickness of which is greater than 120 μm; and a light-emitting diode provided on the surface of the substrate, at one side thereof. | 12-19-2013 |
20140167086 | EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME - An epitaxial wafer having a void for separation of a substrate and a semiconductor device fabricated using the same. The epitaxial wafer includes a substrate, a mask pattern disposed on the substrate and comprising a masking region and an opening region, and an epitaxial layer covering the mask pattern. The epitaxial layer includes a void disposed on the masking region. | 06-19-2014 |
20140179043 | METHOD OF SEPARATING SUBSTRATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A method of fabricating a semiconductor device, the method including: forming a first mask pattern including a masking region and an open region on a substrate; forming a sacrificial layer to cover the substrate and the first mask pattern; patterning the sacrificial layer to form a seed layer and to expose the first mask pattern; forming a second mask pattern on the exposed first mask pattern; forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern and the epitaxial layer; and separating the substrate from the epitaxial layer. | 06-26-2014 |
20140335677 | METHOD FOR SEPARATING EPITAXIAL LAYER FROM GROWTH SUBSTRATE - The present invention provides a method for separating an epitaxial layer from a growth substrate, comprising growing an epitaxial layer including a plurality of layers on a growth substrate; etching an edge of at least one layer in the epitaxial layer to form a notch; forming a bonding layer on the epitaxial layer, contacting a bonding substrate onto the bonding layer, and then heating the bonding layer to a bonding temperature for joining the epitaxial layer and the bonding substrate; and cooling the bonding layer after the heating of the boding layer, so that the epitaxial layer and the bonding substrate are joined by the bonding layer, and the epitaxial layer is separated from the growth substrate, wherein the separating the epitaxial layer from the growth substrate starts with separation from the at least one layer where the notch is formed. | 11-13-2014 |
20140361327 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided. | 12-11-2014 |
20150091042 | LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE HAVING THE SAME - A light emitting diode (LED) chip can include: a first pattern region having one or more curved parts; and a second pattern region at least partially surrounding the first pattern region. The first pattern region can include a first conductive type nitride-based semiconductor layer, an active layer, a second conductive type nitride-based semiconductor layer, a top electrode layer, and a top bump layer stacked over a substrate, the second pattern region can include a first conductive type nitride-based semiconductor layer, a bottom electrode layer, and a bottom bump layer stacked over the substrate, and the first pattern region can include one or more protrusion patterns formed in the one or more curved part. | 04-02-2015 |
20150103634 | WATCH WITH COUNTERFEIT DETECTION FUNCTION - A wearable device such as a watch with a counterfeit detection function that include a display panel configured to display information (e.g., time); a UV LED unit arranged at an edge part of the display panel and configured to provide UV light which reacts with a fluorescent material; and a transparent cover positioned over the display panel so as to focus the UV light. | 04-16-2015 |