Patent application number | Description | Published |
20080206683 | MASK AND BLANK STORAGE INNER GAS - The present disclosure provides a lithography apparatus. The lithography apparatus includes a radiation source providing a radiation energy with a wavelength selected from the group consisting of 193 nm, 248 nm, and 365 nm; a lens system configured approximate to the radiation source; a mask chamber proximate to the lens system, configured to hold a mask and operable to provide a single atom gas to the mask chamber; and a substrate stage configured to hold a substrate and receive the radiation energy through the lens system and the mask during an exposing process. | 08-28-2008 |
20080254376 | PHASE-SHIFTING MASK AND METHOD OF FABRICATING SAME - A phase-shifting mask is fabricated using two separate exposure processes. The mask includes a substrate and a device pattern area above the substrate. The mask has a mask pattern defining boundaries of the device pattern area and an administrative pattern area defining boundaries of the mask pattern. | 10-16-2008 |
20100081065 | PHOTOMASK AND METHOD OF FABRICATING A PHOTOMASK - A method of fabricating a photomask is provided. A masking layer (e.g., chrome) is deposited on a substrate. A plasma treatment may be performed on the chrome layer. A photoresist layer may be formed on the treated chrome layer. In an embodiment, the plasma treatment roughens the chrome layer. In an embodiment, the plasma treatment forms a barrier film on the chrome layer. The photoresist layer may be used to pattern a sub-resolution assist feature. | 04-01-2010 |
20100119958 | MASK BLANK, MASK FORMED FROM THE BLANK, AND METHOD OF FORMING A MASK - A mask for manufacturing a semiconductor device comprises a transparent substrate. A metal-containing layer overlies the transparent substrate in a first region. A capping layer overlies and is coextensive with the metal-containing layer without wrapping around side edges of the metal-containing layer. The capping layer is substantially free of nitride. The transparent substrate has a second region separate from the first region. The transparent substrate is exposed in the second region. | 05-13-2010 |
20100271612 | METHOD AND PELLICLE MOUNTING APPARATUS FOR REDUCING PELLICLE INDUCED DISTORTION - An apparatus for mounting a pellicle onto a mask is provided. In one embodiment, the apparatus comprises a base provided with a track; a dummy plate holder coupled to the base, the dummy plate holder for receiving a dummy plate having an elevated portion on one side thereof; a mask holder for receiving a mask, the mask holder slidably coupled to the base; a pellicle holder for receiving a pellicle frame, the pellicle holder slidably coupled to the base; and drive means being adapted to drive the pellicle holder along the track towards the dummy plate holder, wherein during operation when the pellicle frame is mounted onto the mask causing the mask to contact the dummy plate, the mounting pressure in the mask is distributed by way of the elevated portion in the dummy plate, thus reducing distortion in the mask. | 10-28-2010 |
Patent application number | Description | Published |
20080226991 | Fitting Methodology of Etching Times Determination for a Mask to Provide Critical Dimension and Phase Control - The present disclosure provides a mask and a method of determining etching times for etching the mask. In one embodiment, values for a main etching time and an over-etching time are determined simultaneously based on a desired critical dimension (CD) parameter and a desired phase parameter for the mask. | 09-18-2008 |
20080228309 | Method and System for Reducing Critical Dimension Side-to-Side Tilting Error - A method for reducing a critical dimension error of a substrate is provided. A first function is identified for correlating a critical dimension error with a first effect. A second function is identified for correlating a critical dimension error with a scan speed. An optimal scan speed for minimizing the critical dimension error is identified by substantially equating the first function and the second function. The substrate may be a mask or a wafer. | 09-18-2008 |
20080241708 | SUB-RESOLUTION ASSIST FEATURE OF A PHOTOMASK - The present disclosure provides a mask. The mask includes a transparent substrate, a main feature, and an assistant feature. The main feature includes attenuating material and is disposed on the substrate. The assistant feature includes a sub-resolution feature providing a phase shift. The assistant feature is spaced a distance from the main feature. The assistant feature includes a trench defined by the substrate. The present disclosure further provides a method of fabricating the mask. | 10-02-2008 |
20090023099 | MASK REGISTRATION CORRECTION - A method of manufacturing a semiconductor device comprising forming an active region in a device substrate using a first phase shift mask (PSM) having a first patterned light shielding layer formed thereon, forming a polysilicon feature on the device substrate over the active region using a second PSM having a second patterned light shielding layer formed thereon, forming a contact feature on the polysilicon feature using a third PSM having a third patterned light shielding layer formed thereon, and forming a metal feature on the contact feature using a fourth PSM having a fourth patterned light shielding layer formed thereon, wherein at least one of the third and fourth patterned light shielding layers is patterned substantially similarly to at least one of the first and second patterned light shielding layers. | 01-22-2009 |