Patent application number | Description | Published |
20090117489 | Compositons and processes for immersion lithography - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 05-07-2009 |
20100173245 | Compositions comprising carboxy component and processes for photolithography - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer dining immersion lithography processing. | 07-08-2010 |
20100297549 | Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 11-25-2010 |
20100297550 | Compositions comprising sulfonamide material and processes for photolithography - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 11-25-2010 |
20100304290 | Compositions and processes for photolithography - New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second. | 12-02-2010 |
20110039210 | NOVEL RESINS AND PHOTORESIST COMPOSITIONS COMPRISING SAME - Provided are new resins that comprise lactone units and photoresist compositions that comprise such resins. | 02-17-2011 |
20110223535 | PHOTORESIST COMPRISING NITROGEN-CONTAINING COMPOUND - New nitrogen-containing compounds are provided that comprise multiple hydroxyl moieties and photoresist compositions that comprise such nitrogen-containing compounds. Preferred nitrogen-containing compounds comprise 1) multiple hydroxyl substituents (i.e. 2 or more) and 2) one or more photoacid-labile groups. | 09-15-2011 |
20110250542 | SULFONYL PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME - New bis(sulfonyl)imide and tri(sulfonyl)methide photoacid generator compounds (“PAGs”) are provided as well as photoresist compositions that comprise such PAG compounds. | 10-13-2011 |
20110269070 | PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME - New methods are provided for synthesis of photoacid generator compounds (“PAGs”), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, photoacid generators that comprise 1) a SO | 11-03-2011 |
20110269074 | NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS - New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm. | 11-03-2011 |
20120122030 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 05-17-2012 |
20120129104 | LACTONE PHOTOACID GENERATORS AND RESINS AND PHOTORESISTS COMPRISING SAME - New lactone-containing photoacid generator compounds (“PAGs”) and photoresist compositions that comprise such PAG compounds are provided. These photoresist compositions are useful in the manufacture of electronic devices | 05-24-2012 |
20120129108 | BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME - This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups. | 05-24-2012 |
20120156595 | COMPOSITIONS COMPRISING SUGAR COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sugar substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 06-21-2012 |
20120171626 | COMPOSITIONS COMPRISING BASE-REACTIVE COMPONENT AND PROCESSES FOR PHOTOLITHOGRAPHY - New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist. | 07-05-2012 |
20130065178 | COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 03-14-2013 |
20140356785 | PHOTORESISTS COMPRISING CARBAMATE COMPONENT - New photoresist compositions are provided that comprise a carbamate compound that comprises 1) a carbamate group and 2) an ester group. Preferred photoresists of the invention may comprise a resin with acid-labile groups; an acid generator compound; and a carbamate compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer. | 12-04-2014 |
20150044609 | COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY - New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. | 02-12-2015 |