Chang, Pingjhen City
Ching-Tu Chang, Pingjhen City TW
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20110218377 | Method for solidifying and stabilizing waste acid - The present invention discloses a method for solidifying and stabilizing waste acid including steps of condensing waste acid containing phosphoric acid to reduce the volume; mixing the condensed waste acid with waste acid containing fluoroboric acid to solidify and stabilize the mixed waste acid. The pH of the mixed acid is adjusted by adding barium hydroxide as a neutralizer. The efficiency of solidifying waste acid can be improved by partially granulating and by adding solidifying agent indirectly. The method of the present invention can prevent intensely exothermic reaction caused by adding solidifying agents. Furthermore, the method of the present invention is controlled in a temperature of 30 to 45° C. to improve the polymerization of the mixed waste acid so that the efficiency of solidification thereof can be also improved. | 09-08-2011 |
Chu-Wei Chang, Pingjhen City TW
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20080217675 | Novel profile of flash memory cells - A semiconductor structure includes a semiconductor substrate; a tunneling layer on the semiconductor substrate; a source region adjacent the tunneling layer; and a floating gate on the tunneling layer. The floating gate comprises a first edge having an upper portion and a lower portion, wherein the lower portion is recessed from the upper portion. The semiconductor structure further includes a blocking layer on the floating gate, wherein the blocking layer has a first edge facing a same direction as the first edge of the floating gate. | 09-11-2008 |
20110165746 | Novel Profile of Flash Memory Cells - A semiconductor structure includes a semiconductor substrate; a tunneling layer on the semiconductor substrate; a source region adjacent the tunneling layer; and a floating gate on the tunneling layer. The floating gate comprises a first edge having an upper portion and a lower portion, wherein the lower portion is recessed from the upper portion. The semiconductor structure further includes a blocking layer on the floating gate, wherein the blocking layer has a first edge facing a same direction as the first edge of the floating gate. | 07-07-2011 |
Hui-Pin Chang, Pingjhen City TW
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20120147695 | FEEDER WITH VARIABLE RHOMBOIDAL WALL - A feeder with variable rhomboidal walls includes a base housing, a soft hopper, a plurality of extrusion mechanisms, a pusher screw pole, a motor, and a decelerator. The extrusion mechanisms are respectively provided at four appropriate positions of the soft hopper, and are activated by protruding wheels with the aid of the motor in conjunction with the decelerator, so that the four extrusion mechanisms operate in pairs to squeeze the soft hopper while rendering a rhomboidal space change. Accordingly, a bridge effect associated with the prior art is eliminated to allow a raw material to fall and then to be dispensed by the pusher screw rod for further processing. | 06-14-2012 |
Jen-Huai Chang, Pingjhen City TW
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20110075262 | Asymmetric light diffuser and methods for manufacturing the same - Asymmetric light diffuser and the methods for manufacturing the same are provided. The diffuser is preferably a transparent film made by a stress-stretch process. Particularly, a substrate doped with variant beads is formed as an anisotropic film layer after the stress-stretch process, so that the characteristics with birefringence and diffusion are incorporated. Further the asymmetric relief structure is formed on the surface of substrate by means of extrusion or co-extrusion process. A uniform light and anisotropic refraction can be formed through the diffuser, and even the partial polarization scattering can be formed due to the asymmetric refraction. The preferred embodiment of the diffuser includes a first step of preparing the mold for forming the basic surface structure of the asymmetric diffuser. Further, the substrate with surface micro-structure is formed by a roll-to-roll process. After that, the inside variant refractions and structure deformation are formed under the stress-stretch process. | 03-31-2011 |
20110096403 | Anti-glare optical module and method for manufacturing the same - An anti-glare optical module includes a substrate unit and a thin film unit. The thin film unit is disposed on the top surface of the substrate unit. The thin film unit has a base surface that has a height relative to the top surface of the substrate unit, the thin film unit has a plurality of convex structures, each convex structure has a curvature radius, the curvature radiuses of every two adjacent convex structures are different, a plurality of lower points each formed between every two convex structures and on the base surface, and each convex structure has an upper point. Therefore, the thin film unit has a good scattering effect for reflective light, can maintain the excellent transmittance and can reduce the flicker points by the convex structures, so that using the convex structures can prevent the eyes of the user from being effected by flicker points. | 04-28-2011 |
20110122599 | Composite diffuser structure and backlight module - A composite diffuser structure includes a transparent layer having a light-entering surface and a light-emitting surface, a lenticular structure having a plurality of lenticular lens formed on the light-emitting surface, and a plurality of refection structures located on the light-entering surface. Each of the lenticular lenses has a first width. There is an opening between two adjacent reflection structures. Each of the openings has a second width. Thereby, the light beam enters into the transparent layer via the opening to increase the light efficiency. By using the diffuser layer located above the lenticular structure, the view angle can be adjusted. | 05-26-2011 |
Yi Fang Chang, Pingjhen City TW
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20120263002 | TEST METHOD FOR SCREENING LOCAL BIT-LINE DEFECTS IN A MEMORY ARRAY - A method of detecting manufacturing defects at a memory array may include utilizing test circuitry to provide a selected voltage as drain bias on a bit-line of the memory array where the memory array is configured to employ a first voltage as the drain bias for a read operation and the selected voltage is higher than the first voltage, and determining whether a leakage current indicative of a manufacturing defect between the bit-line and another component of the memory array is present responsive to providing the selected voltage as the drain bias. A corresponding test device is also provided. | 10-18-2012 |