Patent application number | Description | Published |
20100308310 | EMISSIVE ARYL-HETEROARYL ACETYLENES - Disclosed herein are compounds represented by a formula: R | 12-09-2010 |
20100326526 | EMISSIVE ARYL-HETEROARYL COMPOUNDS - Disclosed herein are compounds represented by Formula 1, wherein R | 12-30-2010 |
20100327269 | EMISSIVE TRIARYLS - Disclosed herein are compounds represented by Formula 1. Compositions and light-emitting devices related thereto are also disclosed. | 12-30-2010 |
20110062386 | COMPOUNDS FOR ORGANIC LIGHT EMITTING DIODE EMISSIVE LAYERS - Disclosed herein are compounds represented by a formula: | 03-17-2011 |
20110193075 | PRINTABLE LIGHT-EMITTING COMPOSITIONS - Disclosed herein are compositions comprising an electron transport compound, an emissive compound, and an organic solvent. The emissive compound comprises an organic indium complex attached to a nanoparticle core. These compositions are useful in fabricating light emitting devices and can be deposited on a substrate via a printing process. | 08-11-2011 |
20130146856 | COMPOUNDS FOR USE IN LIGHT-EMITTING DEVICES - Compounds including optionally substituted Ring Systems 1-4 may be used as host in light-emitting devices. | 06-13-2013 |
20150099890 | Polyphenylene Host Compounds - Polyphenylene compounds such as compounds represented by Formula 1 may be used in electronic devices such as organic light-emitting devices. For example, the compounds may be used as host materials in a light-emitting layer. | 04-09-2015 |
Patent application number | Description | Published |
20090066234 | LIGHT EMITTING DEVICES AND COMPOSITIONS - A light emitting composition includes a light-emitting iridium-functionalized nanoparticle, such as an organic-inorganic light-emitting iridium-functionalized nanoparticle. A light emitting device includes an anode, a cathode, and a layer containing such a light-emitting composition. In an embodiment, the light emitting device can emit white light. | 03-12-2009 |
20090179552 | LIGHT EMITTING DEVICES AND COMPOSITIONS - A light emitting composition includes a light-emitting lumophore-functionalized nanoparticle, such as an organic-inorganic light-emitting lumophore-functionalized nanoparticle. A light emitting device includes an anode, a cathode, and a layer containing such a light-emitting composition. In an embodiment, the light emitting device can emit white light. | 07-16-2009 |
20120273765 | LIGHT EMITTING DEVICES AND COMPOSITIONS - A light emitting composition includes a light-emitting lumophore-functionalized nanoparticle, such as an organic-inorganic light-emitting lumophore-functionalized nanoparticle. A light emitting device includes an anode, a cathode, and a layer containing such a light-emitting composition. In an embodiment, the light emitting device can emit white light. | 11-01-2012 |
20120305895 | LIGHT EMITTING DEVICES AND COMPOSITIONS - A light emitting composition includes a light-emitting iridium-functionalized nanoparticle, such as a compound of formula (I). The compound of formula (I) further comprises at least one host attached to the core. A light emitting device includes an anode, a cathode, and a layer containing such a light-emitting composition is also disclosed. In an embodiment, the light emitting device can emit white light. | 12-06-2012 |
20130284907 | EMISSIVE ARYL-HETEROARYL COMPOUNDS - Disclosed herein are compounds represented by Formula 1, wherein R | 10-31-2013 |
Patent application number | Description | Published |
20120007644 | COMPARATOR-BASED BUFFER WITH RESISTIVE ERROR CORRECTION - A comparator-based buffer method and system enhance the driving capability of high-gain amplifiers with switched-capacitor loads. It includes a current source, a comparator, switches, sampling capacitor and overshoot correction resistor. A correction solution using a resistor in the charging path and a correction phase reduces the overshoot of the output voltage while constraining power consumption and minimizing components. Spectre® simulations verify the effectiveness of the invention. | 01-12-2012 |
20120032831 | ADDER-EMBEDDED DYNAMIC PREAMPLIFIER - A method and apparatus for an adder-embedded dynamic preamplifier system with dynamic comparator and current mode adder including differential switches for precharging, a switch for evaluation; and reference, feedfoward input sections. When differential switches are closed, OUTN and OUTP are precharged. During the evaluation, discharging currents are proportionately determined by input and reference values. A following latch amplifies the discharging differences of OUTN and OUTP. | 02-09-2012 |
20120068865 | FAST DATA WEIGHTED AVERAGE CIRCUIT AND METHOD - A method and apparatus are provided for Fast Data Weighted Average (DWA) double-sampling modulators with minimal loop delay supporting improved stability. Quantization and DEM are accomplished within non-overlap time. By this reduction in time delay, power can be saved for analog integrators. The DC signal of partitioned DWA is removed by alternating reference voltages, and there is no additional delay as the alternation is performed at the comparator inputs. Embodiments employ an oversampling ratio (OSR) of 8 and a 15-level quantizer. | 03-22-2012 |
Patent application number | Description | Published |
20110216284 | AUTOMATIC MODE SWITCHING BETWEEN SINGLE AND MULTIPLE PROJECTORS - Control of a multiprojector system having multiple projectors arranged in a projector array. It is determined whether the projector array is positioned to form one object or two or more objects. A first keystone correction mode is selected if it is determined that the projector array is positioned to form one object. A second keystone correction mode is selected if it is determined that the projector array is positioned to form two or more objects. In the first keystone correction mode, a homography transformation for each of the projectors is derived so as to accommodate keystone correction of all projectors in the projector array involved in the projection of the single object. In the second keystone correction mode, a homography transformation for each of the projectors is derived so as to accommodate keystone correction of all projectors involved in the projection of each object. | 09-08-2011 |
20110321111 | DYNAMIC LAYOUT OF CONTENT FOR MULTIPLE PROJECTORS - A projection system distributed on a network, the projection system comprising a projection server and at least one projection client. The projection client hosts a projector array of multiple projectors which together project a tiling of an image onto a projection surface. The projection server accepts an incoming request from the projection client via the network, the request providing the projection server with area information for a projection area of the projector array onto the projection surface. The projection server determines a layout for the image by calculations using the area information. Layout information based on the layout is transmitted via the network to the projection client in response to the request, and image data is projected in accordance with the layout information received from the projection server. | 12-29-2011 |
20120032978 | PROJECTOR ARRAY FOR MULTIPLE IMAGES - A centralization point in a projection area is designated. The projection area is on a projection surface onto which images are projected by a projector array, which includes a plurality of projectors. A first image is projected in a first maximum area rectangle at a first aspect ratio of the first image, and the first image is projected into the projection area centered at the centralization point. A second image is projected in a second maximum area rectangle at a second aspect ratio of the second image, and the second image is projected into the projection area centered at the centralization point. | 02-09-2012 |
20120099081 | PROJECTOR ARRAY FOR MULTIPLE IMAGES - A projector array includes a plurality of projectors, which together project images into a projection area on a projection surface. Aspect ratios are normalized for all of multiple images designated for display. The normalized aspect ratios are aligned at a common central point. An aspect ratio of a minimum rectangular shape is determined that will encompass all of the aligned aspect ratios. A maximum rectangular projection area is determined within the projection area having the same aspect ratio as the minimum rectangular shape. The center of the maximum rectangular area is designated as a centralization point. Each of all of the multiple images is sequentially projected into the projection area. Each image is scaled for display at its aspect ratio and is displayed centered at the centralization point. | 04-26-2012 |
20120147054 | IDENTIFYING A RECTANGULAR AREA IN A MULTI-PROJECTOR SYSTEM - Determining a rectangular area with a given aspect ratio within a global boundary formed by multiple projectors. An iterated process is repeated at moved locations along the global boundary, until a stopping condition is met. According to the iterated process, a point at a location of the global boundary is selected, a minimum rectangle with the given aspect ratio is grown from identified directions, and the largest rectangle encountered is delivered when the stopping condition has been met. For each such direction, the minimum rectangle is grown in the direction from the selected point until it intersects with a boundary, the grown rectangle is grown in another direction responsive to a determination that the grown rectangle can grow in another direction. The largest rectangle encountered previously is replaced, responsive to a comparison which indicates that the grown rectangle is larger than the largest rectangle encountered previously. | 06-14-2012 |
20120155771 | IDENTIFYING MULTIPLE RECTANGULAR AREAS IN A MULTI PROJECTOR SYSTEM - Determination of locations of multiple rectangular areas within a composite projection area formed on a projection surface by a projector array of multiple projectors. A location of a maximum rectangular area is determined within the composite projection area. Available regions comprise regions unoccupied by previously-located rectangular areas. The maximum rectangular area is removed from the available regions. The following are iteratively repeated: determining a location of a next maximum rectangular area and removing the next maximum rectangular area from the available regions, until a stopping condition is met. A list of determined locations for rectangular areas within the composite projection area is provided after the stopping condition has been met. | 06-21-2012 |
Patent application number | Description | Published |
20110174362 | MANUFACTURE OF THIN FILM SOLAR CELLS WITH HIGH CONVERSION EFFICIENCY - A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a antireflection coating layer disposed on a first surface of a substrate, a barrier layer disposed on a second surface of the substrate, a first transparent conductive oxide layer disposed on the barrier layer, a conductive contact layer disposed on the first transparent conductive oxide layer, a first p-i-n junction formed on the conductive contact layer, and a second transparent conductive oxide layer formed on the first p-i-n junction. | 07-21-2011 |
20110177648 | METHOD OF MANUFACTURING THIN FILM SOLAR CELLS HAVING A HIGH CONVERSION EFFICIENCY - A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a antireflection coating layer disposed on a first surface of a substrate, a barrier layer disposed on a second surface of the substrate, a first transparent conductive oxide layer disposed on the barrier layer, a conductive contact layer disposed on the first transparent conductive oxide layer, a first p-i-n junction formed on the conductive contact layer, and a second transparent conductive oxide layer formed on the first p-i-n junction. | 07-21-2011 |
20110232753 | METHODS OF FORMING A THIN-FILM SOLAR ENERGY DEVICE - A method and apparatus for making solar cell active layers is provided. A doped microcrystalline semiconductor layer is formed with a bandgap-enhancing alloy material at low hydrogen flow rates. Deposition conditions are established at a low flowrate of the semiconductor source and ramped to a high flowrate as a first sublayer is deposited. The bandgap-enhancing alloy material is added to the reaction mixture to deposit a second sublayer. The bandgap-enhancing alloy material may optionally be stopped to deposit a third sublayer. | 09-29-2011 |
20120107996 | SURFACE TREATMENT PROCESS PERFORMED ON A TRANSPARENT CONDUCTIVE OXIDE LAYER FOR SOLAR CELL APPLICATIONS - Embodiments of the invention provide methods of a surface treatment process performing on a transparent conductive oxide layer used in solar cell devices. In one embodiment, a method of performing a surface treatment process includes providing a substrate having a transparent conductive oxide layer disposed thereon in a processing chamber, supplying a gas mixture including an oxygen containing gas into the processing chamber, and performing a surface treatment process using the gas mixture on the surface of the transparent conductive oxide layer. | 05-03-2012 |
20130112264 | METHODS FOR FORMING A DOPED AMORPHOUS SILICON OXIDE LAYER FOR SOLAR CELL DEVICES - Embodiments of the present invention relate to methods for forming a doped amorphous silicon oxide layer utilized in thin film solar cells. In one embodiment, a method for forming a doped p-type amorphous silicon containing layer on a substrate includes providing a substrate in a processing chamber, supplying a gas mixture having a hydrogen-based gas, a silicon-based gas and a carbon and oxygen containing gas into the processing chamber, the gas mixture having a volumetric flow ratio of the hydrogen-based gas to the silicon-based gas between about 5 and about 15, wherein a volumetric flow ratio of the carbon and oxygen containing gas to the total combined flow of hydrogen-based gas and the silicon-based gas is between about 10 percent and about 50 percent; and maintaining a process pressure of the gas mixture within the processing chamber at between about 1 Torr and about 10 Torr while forming a doped p-type amorphous silicon containing layer. | 05-09-2013 |