Patent application number | Description | Published |
20080246158 | Method for Realizing a Nanometric Circuit Architecture Between Standard Electronic Components and Semiconductor Device Obtained with Said Method - A method for realizing a nanometric circuit architecture includes: realizing plural active areas on a semiconductor substrate; realizing on the substrate a seed layer of a first material; realizing a mask-spacer of a second material on the seed layer in a region comprised between the active areas; realizing a mask overlapping the mask-spacer and extending in a substantially perpendicular direction thereto; selectively removing the seed layer exposed on the substrate; selectively removing the mask and the mask-spacer obtaining a seed-spacer comprising a linear portion extending in that region and a portion substantially orthogonal thereto; realizing by MSPT from the seed-spacer an insulating spacer reproducing at least part of the profile of the seed-spacer realizing by MSPT a nano-wire of conductive material from the seed-spacer or insulating spacer, the nano-wire comprising a first portion at least partially extending in the region and a second portion contacting a respective active area. | 10-09-2008 |
20090003063 | METHOD AND DEVICE FOR DEMULTIPLEXING A CROSSBAR NON-VOLATILE MEMORY - A method and device demultiplex a crossbar non-volatile memory that includes a first array of row nano-wires and a second array of column nano-wires, which cross the row nano-wires at a plurality of cross-points, hosting plural memory cells. A first electrode and a second electrode respectively cross a modulated doping portion of the row nano-wires and a modulated doping portion of the column nano-wires. A first contact and a second contact respectively the row nano-wires and the column nano-wires. The first electrode and the second electrode are biased respectively with a first and a second adjustable voltage value that progressively switch one by one said memory cells from the OFF state to the ON state, and this state can be memorized. | 01-01-2009 |
20090020747 | METHOD FOR REALIZING A HOSTING STRUCTURE OF NANOMETRIC ELEMENTS - A nanometric device comprising a substrate; a plurality of conductive spacers of a conductive material, each conductive spacer being arranged on top of and transverse to the substrate, the conductive spacers including respective pairs of conductive spacers defining respective hosting seats each of less than 30 nm wide; and a plurality of nanometric elements respectively accommodated in the hosting seats. | 01-22-2009 |
20090154223 | METHOD AND DEVICE FOR DEMULTIPLEXING A CROSSBAR NON-VOLATILE MEMORY - A method and device demultiplex a crossbar non-volatile memory that includes a first array of row nano-wires and a second array of column nano-wires, which cross the row nano-wires at a plurality of cross-points, hosting plural memory cells. A first electrode and a second electrode respectively cross a modulated doping portion of the row nano-wires and a modulated doping portion of the column nano-wires. A first contact and a second contact respectively the row nano-wires and the column nano-wires. The first electrode and the second electrode are biased respectively with a first and a second adjustable voltage value that progressively switch one by one said memory cells from the OFF state to the ON state, and this state can be memorized. | 06-18-2009 |
20100019389 | ELECTRIC LINKAGE IN A SEMICONDUCTOR ELECTRONIC DEVICE BETWEEN A NANOMETRIC CIRCUIT ARCHITECTURE AND STANDARD ELECTRONIC COMPONENTS - A semiconductor electronic device that includes a semiconductor substrate having a top surface; a seed layer positioned on the substrate and having a notched wall extending transversely with respect to the substrate top surface, the wall defining a first recess extending into the seed layer with a height equal to a thickness of the seed layer; a first conductive nanowire in contact with the notched wall, the first conductive nanowire having a contact portion extending into the first recess and covering opposite sidewalls and a bottom of the first recess; a first insulating nanowire in contact with a sidewall of the first conductive nanowire; an insulating layer on the contact portion of the first conductive nanowire and having a first window substantially in correspondence with the contact portion of the first conductive nanowire; and a first conductive die on the insulating layer that includes a conductive contact extending into the first window and contacting the contact portion of the first conductive nanowire. | 01-28-2010 |
20120174954 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION DEVICE EMPLOYING TREATED FILMS OF SEMICONDUCTING MATERIAL NOT REQUIRING NANOMETRIC DEFINITION - The disclosure relates to Seebeck/Peltier effect thermoelectric conversion devices and in particular devices made of stack of dielectric layers alternated to treated semiconducting layers even of large size, not requiring lithographic patterning in a nano-micrometric scale. | 07-12-2012 |
20120279542 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION DEVICE EMPLOYING A STACK OF ALTERNATED NANOMETRIC LAYERS OF CONDUCTIVE AND DIELECTRIC MATERIAL AND FABRICATION PROCESS - A multilayered stack useful for constituting a Seebeck-Peltier effect electrically conductive septum with opposite hot-side and cold-side metallizations for connection to an electrical circuit, comprises a stacked succession of layers (Ci) of electrically conductive material alternated to dielectric oxide layers (Di) in form of a continuous film or of densely dispersed nano and sub-nano particles or clusters of particles of oxide; at least the electrically conductive layers having mean thickness ranging from 5 to 100 nm and surface irregularities at the interfaces with the dielectric oxide layers of mean peak-to-valley amplitude and mean periodicity comprised between 5 to 20 nm. | 11-08-2012 |
20130037070 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION ELEMENT WITH PARALLEL NANOWIRES OF CONDUCTOR OR SEMICONDUCTOR MATERIAL ORGANIZED IN ROWS AND COLUMNS THROUGH AN INSULATING BODY AND PROCESS - A novel and effective structure of a stackable element (A | 02-14-2013 |
20150083178 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION DEVICE HAVING PHONON CONFINEMENT LAYERS OF CRYSTALLINE SEMICONDUCTOR CONTAINING ANGSTROM-SIZED ORGANIC GROUPS AS SEMICONDUCTOR ATOMS SUBSTITUENTS WITHIN THE CRYSTAL LATTICE AND FABRICATION PROCESS - Significant phonon migration restraint is achieved within a relatively homogeneous polycrystalline doped semiconductor bulk by purposely creating in the crystal lattice of the semiconductor hydrocarbon bonds with the semiconductor, typically Si or Ge, constituting effective organic group substituents of semiconductor atoms in the crystalline domains. An important enhancement of the factor of merit Z of such a modified electrically conductive doped semiconductor is obtained without resorting to nanometric cross sectional dimensions in order to rely on surface scattering eventually enhanced by making the surface highly irregular and/or creating nanocavities within the bulk of the conductive material. A determinant scattering of phonons migrating under the influence and in the direction of a temperature gradient in the homogeneous semiconductor takes place at the organic groups substituents in the crystalline doped semiconductor bulk. Fabrication processes and Seebeck-Peltier energy conversion devices are exemplarily described. | 03-26-2015 |
Patent application number | Description | Published |
20090270735 | ELECTRONIC ARRAY PROBE FOR ULTRASONIC IMAGING - An electronic array probe for ultrasonic imaging includes an array of transmitting and/or receiving electroacoustic transducers arranged in concentric bands in which the transducers are tangent to one other in both radial and circumferential directions. In order to minimize the number of transducers required without compromising dynamic range, a transducer arrangement geometry is provided so that the number of transducers having the same focusing delay is minimal or null. | 10-29-2009 |
20100274136 | ARRAY OF ELECTROACOUSTIC TRANSDUCERS AND ELECTRONIC PROBE FOR THREE-DIMENSIONAL IMAGING - An electroacoustic transducer assembly and probe for emitting and receiving acoustic radiation beams. The transducer assembly comprising an array of electroacoustic transducers composed of a plurality of individual transducer elements each one being composed of an electroacoustic element. A means for defocusing a radiation pulse emitted from the transducer element is associated with each transducer element. The defocusing means is constructed and arranged to cause the radiation pulse to generate a substantially cylindrical or spherical acoustic field. | 10-28-2010 |
20100277038 | ARRAY OF ELECTROACOUSTIC TRANSDUCERS AND ELECTRONIC PROBE FOR DIAGNOSTIC IMAGES WITH HIGH FOCUSING DEPTH - An electroacoustic transducer assembly and probe for emitting and receiving acoustic radiation beams. The transducer assembly comprising a plurality of transducer elements, each one composed of an electroacoustic element, arranged side by side and spaced apart along a row having a first end. Starting from transducer element proximate to the first end, adjacent transducer elements are constructed and arranged create an electroacoustic pair. A first element of the electroacoustic pair is constructed and arranged to only transmit acoustic pulses and a second element of the electroacoustic pair is constructed and arranged to only receive acoustic pulses. Each electroacoustic pair share a common connection line which branches off into a transmit branch connected to the first element and a receive branch connected to the second element. | 11-04-2010 |
20110208059 | Ultrasound probe - An ultrasound probe for diagnostic images includes a set or array of electroacoustic transducers generating an ultrasonic beam and defining at least one scan plane or a predetermined scan volume, and one or more layers matching acoustic impedance characteristics of the transducers with acoustic impedance characteristics of tissues under examiantion. The layers overlap the transducers, on the face emitting/receiving acoustic pulses. Acoustic properties of the material or materials constituting the one or more layers, the geometric shape of the layers, and/or the structure of the transducers cause the ultrasonic beam to be apodized and the profile of the ultrasonic beam in a plane perpendicular to the scan plane and parallel to the ultrasonic beam to be highly homogeneous. The emitted pulse has a greater intensity uniformity in the part of the ultrasonic beam closer to the scan plane and a predetermined lower intensity in side lobes of the ultrasonic beam. | 08-25-2011 |
20110257531 | METHOD OF MEASURING THE THICKNESS OF A BIOLOGICAL TISSUE BY ULTRASOUNDS AND DEVICE FOR CARRYING OUT SUCH METHOD - A method of measuring the thickness of a biological tissue by ultrasounds and a device carrying out such method. The method is implemented with an ultrasound probe that emits ultrasonic pulses within a body under examination and receives echoes generated from structures of the body under examination. The probe includes an array of two or more electro-acoustic transducers and, in combination, means for processing the reception signals and means for orienting one or more lines of sight, along which the emission of the pulses and/or the reception of the echoes is focused, according to different angles with respect to an axis perpendicular to the emitting surface of the probe. The thickness of the biological tissue is calculated by the time interval between the reception of the first echo and the reception of the second echo, which are relevant to the same ultrasonic pulse emitted along at least a line of sight oriented along an axis perpendicular to the surface of the biological tissue, which is defined by the iteration of measurements with the line of sight oriented at different angles and with comparisons between the measured intensity values, the orientation corresponding to the axis perpendicular to the surface of the biological tissue being the one showing the maximum intensity of the first echo. | 10-20-2011 |
20110319760 | MONITORING SYSTEM - A portable ultrasound monitoring system having an array of electroacoustic transducers, each transducer is constructed and arranged to emit an ultrasound wave when powered with an electric excitation signal and generate an electric reception signal when impinged by a reflected ultrasound wave. The monitoring system also has a generating means for generating the electric excitation signals and a receiving means for receiving the electric reception signals. A supporting means for supporting the portable ultrasound monitoring system is also provided. The supporting means has a fastening means for temporarily fastening at least the array of electroacoustic transducers to a body under examination in a predetermined position for performing an examination. | 12-29-2011 |
20120010501 | IMAGING APPARATUS AND METHOD FOR MONITORING A BODY UNDER EXAMINATION - The present disclosure relates to an imaging system and method for monitoring a body. The system and method provides a first image acquisition means allowing a volumetric three-dimensional image to be acquired in combination with a second two-dimensional image acquisition means. | 01-12-2012 |
20130064037 | Method and apparatus for ultrasound image acquisition - Apparatus for ultrasound image acquisition is integrated into the casing of an ultrasound probe that includes an array of electro-acoustic transducers, which transmit and receive ultrasound pulses. The array communicate with a processing unit, to which reception signals are fed, and are connected to a unit generating signals for exciting the transmission of ultrasound waves. In one aspect of the invention, at least the processing unit is fitted into the probe casing and is configured to convert the reception signals into an image, and to generate video signals for generating an image on a display unit. The transmission between the probe and a remote unit displaying and possibly storing the images as video signals may be operated wirelessly. | 03-14-2013 |