Patent application number | Description | Published |
20090091429 | COUPLER-INTEGRATED TRANSFORMER - A coupler-integrated transformer for processing power line communication is disclosed. The transformer includes a sensor unit to obtain power and transformer state information, low- and high-voltage power line communication modules to send the power and transformer state information via a low-voltage or high-voltage power line, and to send a communication signal from the low-voltage power line to the high-voltage power line or vice versa via signal amplification, low- and high-voltage power line communication couplers connected to the low- and high-voltage power line communication modules to perform insertion and extraction of the communication signal with respect to a power distribution line, and a microcontroller to process the information from the sensor unit and supply the processed information to the power line communication modules. The transformer enables easy set-up of a communication network system with customers adjacent to the transformer using high-voltage power line communication, achieving a remarkable increase in system capacity. | 04-09-2009 |
20100100341 | POWER METER BASED ON SYSTEM ON CHIP - Power meter based on a system-on-a-chip (SoC) is disclosed. The power meter provides all necessary functions related to power metering, power information processing and power information transmission on the basis of a system-on-a-chip enabling power meter functions to be mounted in a single chip in a manner that hardware resources can be recombined to implement hardware logics ensuring portability according to customer needs. The SoC-based power meter includes: an A/D converter converting an analog signal corresponding to a voltage and current supplied to a customer into digital data; a digital signal processor performing power metering by processing digital data from the A/D converter; a micro controller unit processing power meter information using data from the digital signal processor; a memory storing processed power meter information; and interfaces sending power meter information stored in the memory to external appliances, and forwarding signals received from external appliances to the micro controller unit. | 04-22-2010 |
20120026005 | AUTOMATIC METER READING SYSTEM AND METHOD FOR UNDERGROUND DISTRIBUTION LINE USING WIRED/WIRELESS COMMUNICATION - Disclosed herein is an automatic meter reading system for an underground distribution line using wired/wireless communication. The system includes at least one Data Concentration Unit (DCU), at least one Wireless Gathering Unit (WGU), and at least one wireless communication modem. The DCU is installed in a ground transformer, and sends meter reading data to an underground high-voltage distribution line (DL) using a Frequency Division Duplex (FDD) power line communication repeating method. The WGU is installed on a ground rising pipe or at a multi-consumer lead-in wire, and sets up a higher wireless mesh network and a lower wireless mesh network. The wireless communication modem sets up the lower wireless mesh network along with the WGU and the wireless communication modems, gathers the meter reading data, stores the gathered meter reading data, and transfers the stored meter reading data to the DCU through the WGU. | 02-02-2012 |
20130027219 | ADVANCED METERING INFRASTRUCTURE SYSTEM FOR GUARANTEEING RELIABLE TRANSMISSION OF METER DATA AND ADVANCED METERING METHOD USING THE SAME - Disclosed herein is an advanced metering infrastructure system that includes electronic meters, each of which being configured to measure and store an amount of energy consumed by each customer and provided with a slave communication modem, a data concentrator for collecting meter data from the electronic meters via a master communication modem that performs wired/wireless communication with the slave communication modems of the electronic meters, and a meter reading server for receiving and managing the meter data collected by the data concentrator. The master communication modem and each of the slave communication modems implement mutual communication interfaces using a protocol stack. The protocol stack includes a network layer, an application layer, and a modem performance analysis layer disposed between the network layer and the application layer and configured to analyze quality of a communication link between the master communication modem and each slave communication modem. | 01-31-2013 |
Patent application number | Description | Published |
20080279243 | Distributed Feedback (Dfb) Quantum Dot Laser Structure - A distributed feedback (DFB) quantum dot semiconductor laser structure is provided. The DFB quantum dot semi-conductor laser structure includes: a first clad layer formed on a lower electrode; an optical waveguide (WG) formed on the first clad layer; a grating structure layer formed on the optical WG and including a plurality of periodically disposed gratings; a first separate confinement hetero (SCH) layer formed on the grating structure layer; an active layer formed on the first SCH layer and including at least a quantum dot; a second SCH layer formed on the active layer; a second clad layer formed on the second SCH layer; an ohmic layer formed on the second clad layer; and an upper electrode formed on the ohmic layer. Accordingly, an optical WG is disposed on the opposite side of the active layer from the grating structure layer, thereby increasing single optical mode efficiency. And, an asymmetric multi-electrode structure is used for applying current, thereby maximizing purity and efficiency of the single mode semiconductor laser structure. | 11-13-2008 |
20090296766 | QUANTUM DOT LASER DIODE AND METHOD OF MANUFACTURING THE SAME - Provided are a quantum dot laser diode and a method of manufacturing the same. The method of manufacturing a quantum dot laser diode includes the steps of: forming a grating structure layer including a plurality of gratings on a substrate; forming a first lattice-matched layer on the grating structure layer; forming at least one quantum dot layer having at least one quantum dot on the first lattice-matched layer; forming a second lattice-matched layer on the quantum dot layer; forming a cladding layer on the second lattice-matched layer; and forming an ohmic contact layer on the cladding layer. Consequently, it is possible to obtain high gain at a desired wavelength without affecting the uniformity of quantum dots, so that the characteristics of a laser diode can be improved. | 12-03-2009 |
20100092175 | REFLECTIVE SEMICONDUCTOR OPTICAL AMPLIFIER AND OPTICAL SIGNAL PROCESSING METHOD USING THE SAME - Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal. | 04-15-2010 |
20100158427 | OPTICAL AMPLIFIER - An optical amplifier includes a passive waveguide region and an active waveguide region. The passive waveguide region is configured to receive an incident optical signal and adjust a mode of the optical signal. The active waveguide region is integrated to the passive waveguide region and configured to perform gain modulation on the optical signal received from the passive waveguide region by changing density of carriers in response to a current applied to the active waveguide region. Internal loss of the active waveguide region is adjusted to produce a resonance effect and thereby to increase bandwidth of the active waveguide. Therefore, the optical amplifier can have a wide bandwidth under a low-current condition. | 06-24-2010 |
20100252094 | High-Efficiency Solar Cell and Method of Manufacturing the Same - Provided are a high-efficiency solar cell, which converts light energy of incident light into electrical energy, and a method of manufacturing the same. An upper ohmic layer is formed at a predetermined tilt angle less than 45° and an ohmic electrode is deposited on the upper ohmic layer so as to reduce shadow loss due to the ohmic electrode and lessen contact resistance. | 10-07-2010 |
20100316383 | WAVELENGTH DIVISION MULTIPLEXED-PASSIVE OPTICAL NETWORK APPARATUS - Provided is a wavelength division multiplexed-passive optical network (WDM-PON) apparatus. The WDM-PON includes an optical source unit, an optical mux, and a chirped Bragg grating. The optical source unit generates an optical signal. The optical mux receives the optical signal from the optical source unit through one end of the optical mux, multiplexes the optical signal, and outputs the multiplexed optical signal. The chirped Bragg grating is connected to the other end of the optical mux. The chirped Bragg grating again reflects the optical signal having passed the optical mux to re-input a certain portion of the optical signal into the optical mux and the optical source unit. The optical mux performs a spectrum slicing on the re-inputted optical signal and operates the optical source unit using a channel wavelength of the optical mux as a main oscillation wavelength. | 12-16-2010 |
20110134513 | OPTICAL DEVICE MODULE - Provided is an optical device module that can improve miniaturization and integration. The optical device module includes a semiconductor optical amplifier having a buried structure and including a first active layer buried in a clad layer disposed on a first substrate, an optical modulator in which a sidewall of a second active layer disposed in a direction of the first active layer on a second substrate junctioned to the first substrate is exposed, the optical modulator having a ridge structure, and at least one multi-mode interference coupler in which the second active layer junctioned to the first active layer is buried in the clad layer, the multi-mode interference coupler sharing the second active layer on the second substrate between the optical modulator and the semiconductor optical amplifier and integrated with the second optical device. | 06-09-2011 |
20110165716 | QUANTUM DOT LASER DIODE AND METHOD OF FABRICATING THE SAME - A quantum dot laser diode and a method of fabricating the same are provided. The quantum dot laser diode includes: a first clad layer formed on an InP substrate; a first lattice-matched layer formed on the first clad layer; an active layer formed on the first lattice-matched layer, and including at least one quantum dot layer formed of an InAlAs quantum dot or an InGaPAs quantum dot which is grown by an alternate growth method; a second lattice-matched layer formed on the active layer; a second clad layer formed on the second lattice-matched layer; and an ohmic contact layer formed on the second clad layer. | 07-07-2011 |
20120014398 | WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER MODULE - Provided is a wavelength-tunable external cavity laser module. The wavelength-tunable external cavity laser module includes: a gain medium generating light; an optical waveguide combined with the gain medium and including a Bragg grating and a thin film heater adjusting a temperature of the Bragg grating; and a high frequency transmission medium delivering a high frequency signal to the gain medium, wherein the high frequency transmission medium controls an operating speed of the light. | 01-19-2012 |
20120093178 | WAVELENGTH TUNABLE EXTERNAL CAVITY LASER GENERATING DEVICE - Provided is a wavelength tunable external cavity laser generating device. The wavelength tunable external cavity laser generating devices includes: an optical amplifier, a comb reflector, and an optical signal processor connected in series on a first substrate; and an external wavelength tunable reflector disposed on a second substrate adjacent to the first substrate and connected to the optical amplifier, wherein the comb reflector includes: a waveguide disposed on the first substrate; a first diffraction grating disposed at one end of the waveguide adjacent to the optical amplifier; and a second diffraction grating disposed at the other end of the waveguide adjacent to the optical signal processor, wherein the optical amplifier, the comb reflector, and the optical signal processor constitute a continuous waveguide. | 04-19-2012 |
20120281274 | SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type. | 11-08-2012 |
20120307857 | SUPERLUMINESCENT DIODE, METHOD OF MANUFACTURING THE SAME, AND WAVELENGTH-TUNABLE EXTERNAL CAVITY LASER INCLUDING THE SAME - Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide. | 12-06-2012 |
20130243013 | TUNABLE LASER MODULE - The present disclosure relates to a tunable laser module including a light gain area unit for outputting an optical signal; an optical distributor for separating the optical signal output from the light gain area unit; two comb reflection units for reflecting a part of optical signals separated by the optical distributor and allow a part of the optical signals to penetrate; two phase units for changing phases of the optical signals penetrating the two comb reflection units; an optical coupler for combining the optical signals of which the phases are changed by the two phase units; and an optical amplifier for amplifying the optical signal combined by the optical coupler, wherein the light gain area unit oscillates a laser by totally reflecting the optical signals reflected by the two comb reflection units. | 09-19-2013 |
20140233945 | WAVELENGTH DIVISION MULTIPLEXING OPTICAL TRANSMITTING APPARATUS AND OPERATING METHOD OF THE SAME - Provided is a wavelength division multiplexing (WDM) optical transmitting apparatus including first to n-th optical transmitters configured to output first to n-th optical signals having different wavelengths, respectively; a wavelength multiplexer configured to multiplex the first to n-th optical signals and generate an output optical signal; a tap coupler configured to receive the output optical signal and generate a controlling optical signal based on some of the output optical signal; a controlling photodetector configured to receive the controlling optical signal and output an optical current based on the controlling optical signal; and a controller configured to control each of the first to n-th optical transmitters based on the optical current, wherein the controller comprises a look-up table, sequentially detects driving conditions for the first to n-th optical transmitters, stores the detected driving conditions in the look-up table, and controls the first to n-th optical transmitters based on the detected driving conditions. | 08-21-2014 |