Patent application number | Description | Published |
20090059197 | Exposure apparatus and method of exposing a semiconductor substrate - An exposure apparatus includes a light source adapted to emit light, a photomask in a path of the light between the light source and a semiconductor substrate, the photomask being in a mask plane (MP) and having patterns to be transcribed onto the semiconductor substrate, and a spatial light modulator (SLM) in a first image correction region of the photomask between the light source and the photomask, the SLM being adapted to adjust a distribution of intensity of the light. | 03-05-2009 |
20100266959 | Pattern forming method - A pattern forming method includes providing a resist, irradiating a first electron beam to a first region of the resist, and irradiating a second electron beam to a second region which is defined along a boundary of the first region of the resist, wherein the first electron beam has a first cross section having a polygonal shape, and the second electron beam has a second cross section having a polygonal shape. | 10-21-2010 |
20120013880 | OPTICAL DEVICE AND EXPOSURE APPARATUS INCLUDING THE SAME - An optical device for splitting a single beam to a plurality of beams and an exposure apparatus including the optical device are disclosed. The optical device includes a first DOE lens array including a plurality of first diffractive optical element (DOE) lenses that are two-dimensionally arranged on a first plane and a second lens array including a plurality of second DOE lenses arranged on a second plane parallel to the first plane so as to respectively correspond to the plurality of first DOE lenses. The first DOE lens array splits a first parallel beam into a plurality of second beams by condensing the first parallel beam and the second DOE lens array modifies the plurality of second beams into a plurality of third beams. | 01-19-2012 |
20120058432 | METHODS OF FORMING SEMICONDUCTOR DEVICES USING PHOTOLITHOGRAPHIC SHOT GROUPING - A method of forming a semiconductor device can include determining a shot set including a plurality of shots, based on a final pattern used to form a mask. Shots included in the plurality shots can be classified as being in a first pass shot set or in a second pass shot set, where each can include a plurality of non-directly neighboring shots. A first pass exposure can be performed to radiate a reticle to provide the first pass shot set and a second pass exposure can be performed to radiate the reticle to provide the second pass shot set. | 03-08-2012 |
20120100465 | PHOTOMASKS AND METHODS OF FABRICATING THE SAME - A photomask includes a pattern area and a blind area, a first opaque pattern disposed on the blind area and having a first thickness, and a second opaque pattern disposed on the pattern area and having a second thickness smaller than the first thickness. The first and second opaque patterns are formed of the same material. | 04-26-2012 |
20120127954 | FEMTO BASE STATION AND METHOD FOR ALLOCATING RADIO RESOURCE THEREOF - A method for allocating radio resource to one or more first UEs by a femto BS, includes: acquiring information about one or more second UEs which are located within a cell coverage of the femto BS but served by the macro BS; receiving a control channel from the macro BS; acquiring radio resource information allocated to the second UEs by the macro BS from the control channel; and allocating radio resource to the first UEs such that the allocated radio resource does not overlap with radio resource information allocated to the second UEs. | 05-24-2012 |
20120148959 | PATTERN FORMING METHOD - A pattern forming method includes providing a first mask with a first aperture, forming a first transfer pattern on a resist by irradiating a first electron beam through the first aperture, the first transfer pattern extending in a first direction and having a boundary along a circumference thereof, and the first electron beam having a cross section of a first square when emerging from the first aperture, and forming a second transfer pattern on the resist by irradiating a second electron beam through the first aperture, the second transfer pattern extending in the first direction and overlapping a portion the boundary of the first transfer pattern, and the second electron beam having a cross section of a second square when emerging from the first aperture. | 06-14-2012 |
20120195287 | COMMUNICATION METHOD USING DUPLICATED ACKNOWLEDGEMENT - Communication methods using duplicated acknowledgement (ACK) are provided. A communication method of a serving base station includes determining if a handover of a device attached to the serving base station is required, and, if the handover is required, transmitting two or more duplicated ACKs to a fixed host. The two or more duplicated ACKs have the same identifier as a final ACK transmitted from the device to the fixed host. This method can alleviate an unnecessary reduction in transmission rate caused by timeout that may occur during handover of the device. | 08-02-2012 |
20120314198 | METHODS OF ESTIMATING POINT SPREAD FUNCTIONS IN ELECTRON-BEAM LITHOGRAPHY PROCESSES - In a method of estimating a PSF in the electron-beam lithography process, a linear resist test pattern may be formed on a substrate. A line response function (LRF) may be determined using a cross-sectional profile of the linear resist test pattern. A development rate distribution in a first direction, the first direction may be substantially perpendicular to an extending direction of the linear resist test pattern, may be calculated using the LRF. A line spread function (LSF), which may represent an exposure distribution in the first direction, may be calculated using the development rate distribution. The PSF may be estimated using the LSF. | 12-13-2012 |
20130143150 | METHOD FOR MANUFACTURING PHOTOMASK AND PHOTOMASK MANUFACTURED USING THE SAME - A method for manufacturing a photomask includes forming a photoresist film on a substrate, and forming a defect detecting pattern on the photoresist film. The defect detecting pattern has a first pattern elongated in a first direction and a second pattern overlapping one end of the first pattern and elongated in a second direction different from the first direction. The first pattern and the second pattern are formed using electron beams (e-beam) diffracted by a same amplifier. | 06-06-2013 |