Patent application number | Description | Published |
20080224092 | Etchant for metal - An etchant for a metal is described. In one example, the etchant includes ammonium persulfate ((NH | 09-18-2008 |
20100051934 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel and a method of manufacturing the same are provided according to one or more embodiments. In an embodiment, a method includes: forming a gate line on an insulation substrate; stacking a gate insulating layer, an oxide semiconductor layer, a first barrier layer, and a first copper layer on the gate line; performing a photolithography process on the oxide semiconductor layer, the first barrier layer, and the first copper layer and forming a data line including a source electrode, a drain electrode, and an oxide semiconductor pattern; forming a passivation layer having the contact hole that exposes the drain electrode on the data line and the drain electrode; and forming a pixel electrode that is connected to the drain electrode through the contact hole on the passivation layer, wherein the forming of a data line, a drain electrode, and an oxide semiconductor pattern includes wet etching the first copper layer and then wet etching the first barrier layer and the oxide semiconductor layer. | 03-04-2010 |
20100182525 | DISPLAY SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME - A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode. | 07-22-2010 |
20110014737 | THIN FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer. | 01-20-2011 |
20110151631 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THEREOF - A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor. | 06-23-2011 |
20110177680 | ETCHANT COMPOSITION FOR METAL WIRING AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME - The present invention relates to an etchant for wet etching a wiring that includes copper, where the etchant includes approximately 5 to approximately 25 wt % of a peroxide, approximately 0.5 to approximately 5 wt % of an oxidant, approximately 0.1 to approximately 1 wt % of a fluoride-based compound and approximately 1 to approximately 10 wt % of a glycol. The etchant can provide an etching rate that is suitable to many processes, and produces an appropriate etching amount as well as an appropriate taper angle. | 07-21-2011 |
20110183476 | ETCHING SOLUTION COMPOSITION AND METHOD OF ETCHING USING THE SAME - An etchant composition for etching a transparent electrode is provided, the etchant composition includes an inorganic acid, an ammonium (NH | 07-28-2011 |
20110256712 | ETCHANT FOR ELECTRODE AND METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME - The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %. | 10-20-2011 |
20120064678 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY PANEL - A method for manufacturing a TFT array panel includes forming a photosensitive film pattern with first and second parts in first and second sections on a metal layer, etching the metal layer of a third section using the film pattern as a mask to form first and second metal patterns, etching the film pattern to remove the first part, etching first and second amorphous silicon layers of the third section using the second part as a mask to form an amorphous silicon pattern and a semiconductor, etching the first and second metal patterns of the first section using the second part as a mask to form a source electrode and a drain electrode including an upper layer and a lower layer, and etching the amorphous silicon pattern of the region corresponding to the first section by using the second part as a mask to form an ohmic contact. | 03-15-2012 |
20120133873 | LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME - A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode. | 05-31-2012 |
20120218622 | Electrophoretic Display Device and Method for Manufacturing the Same - An electrophoretic display device according to an exemplary embodiment of the present invention includes: a lower substrate; an upper substrate; a thin film transistor disposed on the lower substrate; a pixel electrode connected to the thin film transistor; an electronic ink layer positioned between the lower substrate and the upper substrate; a plurality of partitions disposed on the upper substrate; a reflecting layer disposed on the partitions; a color filter disposed between the partitions. | 08-30-2012 |
20130178023 | ETCHING SOLUTION COMPOSITION AND METHOD OF ETCHING USING THE SAME - An etchant composition for etching a transparent electrode is provided, the etchant composition includes an inorganic acid, an ammonium (NH | 07-11-2013 |
20130250396 | ELECTROWETTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An electrowetting display device includes a base substrate, a hydrophobic layer disposed on the base substrate and including at least about 49 atomic percent (at %) of fluorine atoms in a surface thereof, a wall disposed on the base substrate which partitions a pixel area, and an electrowetting layer that includes a first fluid and a second fluid, which are disposed in the pixel area and are immiscible with each other. The second fluid has an electrical conductivity or a polarity. The electrowetting display device further includes an electronic device is configured to apply an electric field to the electrowetting layer to control the electrowetting layer. | 09-26-2013 |
Patent application number | Description | Published |
20090117333 | METHOD OF MANUFACTURING DISPLAY DEVICE AND DISPLAY DEVICE THEREFROM - A method of manufacturing a display device includes: forming an auxiliary layer including at least one of metal and a metal oxide on an insulating substrate; forming a photoresist layer pattern partially exposing the auxiliary layer on the auxiliary layer; forming a trench on the insulating substrate by etching the exposed auxiliary layer and the insulating substrate under the exposed auxiliary layer; forming a seed layer including a first seed layer disposed on the photoresist layer pattern and a second seed layer disposed in the trench; removing the photoresist layer pattern and the first seed layer by lifting off the photoresist layer pattern; removing the auxiliary layer remaining on the insulating substrate after lifting off the photoresist layer pattern; and forming a main wiring layer on the second seed layer by electroless plating. | 05-07-2009 |
20090121228 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed. | 05-14-2009 |
20100261322 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A gate line includes a first seed layer formed on a base substrate and a first metal layer formed on the first seed layer. A first insulation layer is formed on the base substrate. A second insulation layer is formed on the base substrate. Here, a line trench is formed through the second insulation layer in a direction crossing the gate line. A data line includes a second seed layer formed below the line trench and a second metal layer formed in the line trench. A pixel electrode is formed in a pixel area of the base substrate. Therefore, a trench of a predetermined depth is formed using an insulation layer and a metal layer is formed through a plating method, so that a metal line having a sufficient thickness may be formed. | 10-14-2010 |
20110256485 | ETCHANT COMPOSITION, PATTERNING CONDUCTIVE LAYER AND MANUFACTURING FLAT PANEL, DISPLAY DEVICE USING THE SAME - An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water. | 10-20-2011 |
20130308071 | DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF - A display apparatus includes a base substrate, a pixel on the base substrate, and a color filter part between the base substrate and the pixel. The pixel includes a cover layer defining a TSC (Tunnel Shaped Cavity) on the base substrate, an image display part provided in the TSC, and first and second electrodes which apply an electric field to the image display part. | 11-21-2013 |