Patent application number | Description | Published |
20080252293 | DETECTION OF RESONANT TAGS BY ULTRA-WIDEBAND (UWB) RADAR - A detection system having a receiver for detecting a material having a magnetic resonance response to illumination by pulses of ultra-wideband (UWB) electromagnetic radiation is disclosed. The receiver comprises a detector for detecting the pulses after they have interacted with the material, and a discriminator arranged to identify in the detected pulses the magnetic resonance response of the material. By scanning an item tagged with a tag having a material having a magnetic resonant response, by illuminating the item with UWB pulses and identifying in detected pulses the magnetic resonance response of the material, items can be located, imaged, or activated. The magnetic resonance response of the tag can cause activation of the tag. The tag can have a magnetic resonance response arranged to provide an identifiable magnetic resonance signature such that different tags can be identified and distinguished by their signatures. | 10-16-2008 |
20100204415 | SELFASSEMBLED GRAFTED POLYMERIC LAYER FOR USE IN BIOSENSOR TECHNOLOGY - A water soluble functional polyethylene glycol-grafted polysiloxane polymer comprising a polysiloxane backbone and polyethylene glycol side chains is provided having the general formula: | 08-12-2010 |
20110249259 | Single Molecule Optical Spectroscopy in Solid-State Nanopores in a Transmission-Based Approach - Methods and apparatus in the field of single molecule sensing are described, e.g. for molecular analysis of analytes such as molecular analytes, e.g. nucleic acids, proteins, polypeptides, peptides, lipids and polysaccharides. Molecular spectroscopy on a molecule translocating through a solid-state nanopore is described. Optical spectroscopic signals are enhanced by plasmonic field-confinement and antenna effects and probed in transmission by plasmon-enabled transmission of light through an optical channel that overlaps with the physical channel. | 10-13-2011 |
20110312056 | Plasma Membrane Isolation - The present invention relates to a population of monodisperse magnetic nanoparticles with a diameter between 1 and 100 nm which are coated with a layer with hydrophilic end groups. Herein the layer with hydrophilic end groups comprises an inner layer of monosaturated and/or monounsaturated fatty acids bound to said nanoparticles and bound to said fatty acids, an outer layer of a phospholipid conjugated to a monomethoxy polyethyleneglycol (PEG) comprising a hydrophilic end group, | 12-22-2011 |
Patent application number | Description | Published |
20120057163 | METHOD FOR FORMING A NANOSTRUCTURE PENETRATING A LAYER - A method for forming a nanostructure penetrating a layer and the device made thereof is disclosed. In one aspect, the device has a substrate, a layer present thereon, and a nanostructure penetrating the layer. The nanostructure defines a nanoscale passageway through which a molecule to be analyzed can pass through. The nanostructure has, in cross-sectional view, a substantially triangular shape. This shape is particularly achieved by growth of an epitaxial layer having crystal facets defining tilted sidewalls of the nanostructure. It is highly suitably for use for optical characterization of molecular structure, particularly with surface plasmon enhanced transmission spectroscopy. | 03-08-2012 |
20130237021 | ENHANCEMENT MODE FIELD EFFECT DEVICE AND THE METHOD OF PRODUCTION THEREOF - A method is disclosed for producing Group III-N field-effect devices, such as HEMT, MOSHFET, MISHFET or MESFET devices, comprising two active layers, e.g. a GaN/AlGaN layer. The method produces an enhancement mode device of this type, i.e. a normally-off device, by providing a passivation layer on the AlGaN layer, etching a hole in the passivation layer and not in the layers underlying the passivation layer, and depositing the gate contact in the hole, while the source and drain are deposited directly on the passivation layer. The characteristics of the active layers and/or of the gate are chosen such that no two-dimensional electron gas layer is present underneath the gate, when a zero voltage is applied to the gate. A device with this behavior is also disclosed. | 09-12-2013 |