Bonser
Barry J. Bonser, Lyndhurst, NJ US
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20140137343 | POOL OR TANK CLEANING VEHICLE WITH A POWERED BRUSH - A pool cleaning vehicle is described comprising a body mounted on wheels such that it can roll over a surface. The body carries a water inlet port and a water outlet port with the inlet port being located on the bottom of the body. It also has a filter mechanism interposed between the inlet and outlet ports. An electric motor mounted is on the body between the two sides of the body with a shaft extending out of it with a propeller mounted on the shaft. The motor is mounted such that the propeller expels water out of the outlet port. A roller brush extends between the same two sides of the body generally transverse to the direction of travel of the vehicle and the roller brush is rotated by the electric motor via a linkage. | 05-22-2014 |
Douglas Bonser, Hopewell Junction, NY US
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20100267238 | METHODS FOR FABRICATING FINFET SEMICONDUCTOR DEVICES USING PLANARIZED SPACERS - Methods of fabricating a semiconductor device on and in a semiconductor substrate are provided. In accordance with an exemplary embodiment of the invention, one method comprises forming a sacrificial mandrel overlying the substrate, wherein the sacrificial mandrel has sidewalls. Sidewall spacers are formed adjacent the sidewalls of the sacrificial mandrel, the sidewall spacers having an upper portion and a lower portion. The upper portion of the sidewall spacers is removed. The sacrificial mandrel is removed and the semiconductor substrate is etched using the lower portion of the sidewall spacers as an etch mask. | 10-21-2010 |
20110070712 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTIVE RESISTOR STRUCTURE - Methods are provided for fabricating a semiconductor device. A method comprises forming a conductive fin arrangement on a first region of a semiconductor substrate. The method further comprises forming a semiconductive resistor structure on a second region of the semiconductor substrate after forming the conductive fin arrangement, and forming a gate stack foundation structure overlying the conductive fin arrangement after forming the semiconductive resistor structure. The method further comprises removing portions of the gate stack foundation structure overlying the first region of the semiconductor substrate to define a gate structure for the semiconductor device. | 03-24-2011 |
20110198673 | FORMATION OF FINFET GATE SPACER - Gate spacers are formed in FinFETS having a bottom portion of a first material extending to the height of the fins, and a top portion of a second material extending above the fins. An embodiment includes forming a fin structure on a substrate, the fin structure having a height and having a top surface and side surfaces, forming a gate substantially perpendicular to the fin structure over a portion of the top and side surfaces, for example over a center portion, forming a planarizing layer over the gate, the fin structure, and the substrate, removing the planarizing layer from the substrate, gate, and fin structure down to the height of the fin structure, and forming spacers on the fin structure and on the planarizing layer, adjacent the gate. | 08-18-2011 |
20120168833 | FORMATION OF FINFET GATE SPACER - Gate spacers are formed in FinFETS having a bottom portion of a first material extending to the height of the fins, and a top portion of a second material extending above the fins. An embodiment includes forming a fin structure on a substrate, the fin structure having a height and having a top surface and side surfaces, forming a gate substantially perpendicular to the fin structure over a portion of the top and side surfaces, for example over a center portion, forming a planarizing layer over the gate, the fin structure, and the substrate, removing the planarizing layer from the substrate, gate, and fin structure down to the height of the fin structure, and forming spacers on the fin structure and on the planarizing layer, adjacent the gate. | 07-05-2012 |
Douglas J. Bonser, Hopewell Junction, NY US
Patent application number | Description | Published |
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20100267237 | METHODS FOR FABRICATING FINFET SEMICONDUCTOR DEVICES USING ASHABLE SACRIFICIAL MANDRELS - Methods are provided for fabricating a semiconductor device on and in a semiconductor substrate. In accordance with an exemplary embodiment of the invention, one method comprises forming a sacrificial mandrel overlying the substrate, the sacrificial mandrel having sidewalls. Sidewall spacers are formed adjacent the sidewalls of the sacrificial mandrel. The sacrificial mandrel is removed using an ashing process, and the substrate is etched using the sidewall spacers as an etch mask after removal of the sacrificial mandrel. | 10-21-2010 |
Douglas William Bonser, Flower Mound, TX US
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20130338822 | SYSTEM AND METHODS FOR PROVIDING USER SERVICES AT REMOTE LOCATIONS - A delivery service system includes a cabinet having a plurality of controlled-access storage cells, located in a plurality of zones, a user interface, a user evaluation device, and a processor. The system receives a user request to accept an item for delivery, detects user physical characteristics, and provides user access to a storage cell in a selected zone, the zone being selected based on the detected user physical characteristics. | 12-19-2013 |
Geoffrey Bonser, Bellevue, WA US
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20100077362 | SERVER-CONTROLLED USER INTERFACE - A distributed computational system, with local and remote processing components, is configured to provide a user interface of the local component that is stored in the local component but is controlled and updated by the remote component. | 03-25-2010 |
Thomas Bonser, Cincinnati, OH US
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20140026597 | FUEL STORAGE SYSTEM - A cryogenic fuel storage system for an aircraft is disclosed including a cryogenic fuel tank having a first wall forming a storage volume capable of storing a cryogenic liquid fuel; an inflow system capable of flowing the cryogenic liquid fuel into the storage volume; an outflow system adapted to deliver the cryogenic liquid fuel from the cryogenic fuel storage system; and a vent system capable of removing at least a portion of a gaseous fuel formed from the cryogenic liquid fuel in the storage volume. | 01-30-2014 |