Patent application number | Description | Published |
20100237371 | LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - Disclosed is a light emitting device. The light emitting device comprises a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a second electrode layer supporting the light emitting semiconductor layer while surrounding the light emitting semiconductor layer, and a first passivation layer between a side of the light emitting semiconductor layer and the second electrode layer. | 09-23-2010 |
20110303934 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device. The light emitting device comprises a reflective layer comprising an alloy of at least one of an Ag-based alloy, an Al-based alloy, Ag, Al, Rh, or Sn, and at least one of Pd, Cu, C, Sn, In or Cr, and a light emitting semiconductor layer comprising a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer on the reflective layer. | 12-15-2011 |
Patent application number | Description | Published |
20100173492 | METHOD OF FORMING SEMICONDUCTOR DEVICE PATTERNS - Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask. | 07-08-2010 |
20100178599 | Photomask Used in Fabrication of Semiconductor Device - Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof. | 07-15-2010 |
20100240221 | Methods of Forming Patterns for Semiconductor Devices - Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region. | 09-23-2010 |
20130171821 | METHOD OF FABRICATING METAL CONTACT USING DOUBLE PATTERNING TECHNOLOGY AND DEVICE FORMED THEREBY - Metal contacts are formed within a string overhead area using a double patterning technology (DPT) process thereby allowing for the reduction of a string overhead area and a concomitant reduction in the chip size of a semiconductor device. A first mask pattern is formed by etching a first mask layer, the first mask pattern including a first opening formed in a cell region and a first hole formed in a peripheral region. A first sacrificial pattern is formed on the first mask pattern and the exposed first insulating layer of the cell region using a double patterning technology process. Contact holes are formed by exposing the target layer by etching the first insulating layer using the first mask pattern and the first sacrificial pattern as an etch mask. Metal contacts are then formed in the contact holes. | 07-04-2013 |
20150223298 | PARALLEL-TYPE LED LIGHTING DEVICE - The present disclosure provides an AC-direct-type LED-lighting device including compensation circuit for AC input compensation, including a compensation inductor and first compensation capacitor parallelly connected to one terminal of AC input and a second compensation capacitor connected in series; rectifying unit for rectifying output from second compensation capacitor terminals to obtain direct current; and LED array driven by the rectifying unit output, wherein capacities of the first and second compensation capacitors and the compensation inductor and LED array output voltage are determined to cause 0.9 or larger cosine value of a phase, with respect to the AC input voltage, of resulting current obtained by dividing AC input voltage by sum of (i) parallel value of an equivalent impedance R | 08-06-2015 |
20150293309 | METHOD AND APPARATUS FOR ALIGNING OPTICAL ELEMENT - A structure for aligning an optical element includes a baseplate including a set position for mounting at least one optical element, a first reference hole, and a second reference hole spaced by a first distance from the first reference hole. The set position is determined by a first baseline that passes the first reference hole and the second reference hole and a second baseline that intersects with the first baseline at a second distance from the first reference hole on an opposite side to the second reference hole with respect to the first reference hole. The second distance is shorter than the first distance. | 10-15-2015 |