Patent application number | Description | Published |
20130029473 | METHOD OF CLEAVING SUBSTRATE AND METHOD OF MANUFACTURING BONDED SUBSTRATE USING THE SAME - A method of cleaving a substrate and a method of manufacturing a bonded substrate using the same, in which warping in a cleaved substrate is reduced. The method includes the following steps of: forming an ion implantation layer by implanting ions into a substrate; annealing the substrate in which the ion implantation layer is formed; implanting ions again into the ion implantation layer of the substrate; and cleaving the substrate along the ion implantation layer by heating the substrate into which ions are implanted. | 01-31-2013 |
20130049009 | Substrate For Vertical Light-Emitting Diode - A multi-layer substrate for a vertical light-emitting diode (LED) includes a conductive and reflective base substrate and an n-type gallium nitride (GaN) layer formed on the base substrate. | 02-28-2013 |
20130093063 | BONDED SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A bonded substrate having a plurality of grooves and a method of manufacturing the same. The method includes the following steps of implanting ions into a first substrate, thereby forming an ion implantation layer, bonding the first substrate to a second substrate having a plurality of grooves in one surface thereof such that the first substrate is bonded to the one surface, and cleaving the first substrate along the ion implantation layer. | 04-18-2013 |
20130323906 | Method Of Manufacturing Thin-Film Bonded Substrate Used For Semiconductor Device - A method of manufacturing a thin-film bonded substrate used for semiconductor devices. The method includes the steps of epitaxially growing an epitaxial growth layer on a first substrate of a bulk crystal, cleaving the first substrate, thereby leaving a crystal thin film on the epitaxial growth layer, the crystal thin film being separated out of the first substrate, and bonding a second substrate to the crystal thin film, the chemical composition of the second substrate being different from the chemical composition of the first substrate. It is possible to preclude a conductive barrier layer of the related art, prevent a reflective layer from malfunctioning due to high-temperature processing, and essentially prevent cracks due to the difference in the coefficients of thermal expansion between heterogeneous materials that are bonded to each other. | 12-05-2013 |